Fabrication of nanostructured substrates comprising a plurality of nanostructure gradients on a single substrate

Patent metadata

Field	Value
Publication number	US-2018237291-A1
Application number	US-201615751964-A
Country	US
Kind code	A1
Filing date	Aug 12, 2016
Priority date	Aug 14, 2015
Publication date	Aug 23, 2018
Grant date	—

Abstract

The invention relates to a method for producing a nanostructured substrate comprising an array of protruding nanostructures, which method comprises at least the following steps: a) providing a primary substrate; b) depositing at least one layer of a material capable to be removed by means of reactive ion etching (RIE) onto said primary substrate which layer comprises a predetermined gradient of its thickness; c) depositing a nanostructured etching mask onto the graded layer deposited in step b); d) generating protruding structures, in particular nanopillars, in the graded layer deposited in step b) by means of reactive ion etching (RIE), wherein simultaneously at least 2, preferably 3, predetermined continuous gradients of geometric parameters of the protruding structures are generated on the same substrate—More specifically, the geometric parameters are selected from the group comprising the height, diameter and spacing—of the protruding nanostructures. A further aspect of the invention relates to a nanostructured substrate comprising an array of protruding nanostructures obtainable by the method as outlined above. In a preferred embodiment of said nanostructured substrate, each of the protruding nanostructures simultaneously represents an element of 3 continuous gradients of the height, diameter and spacing of said protruding nanostructures.

First claim

1 . A method for producing a nanostructured substrate comprising an array of protruding nanostructures, which method comprises at least the following steps:
a) providing a primary substrate; b) depositing at least one layer of a material capable to be removed by reactive ion etching (RIE) onto said primary substrate which at least one layer comprises a predetermined gradient of its thickness; c) depositing a nanostructured etching mask onto the at least one layer deposited in step b); d) generating the protruding structures, which are nanopillars, in the at least one layer deposited in step b), wherein simultaneously at least 2 predetermined continuous gradients of geometric parameters of the protruding structures are generated on the same substrate.

2 . The method according to claim 1 , wherein the layer deposited in step b) comprises a 2-dimensional or 3-dimensional gradient of its thickness.

3 . The method according to claim 1 , wherein the geometric parameters are selected from the group consisting a of height, a diameter and a spacing of the protruding structures.

4 . The method according to claim 1 , wherein the nanostructured etching mask comprises an array of nanoparticles which is provided by micellar diblock or multiblock copolymer nanolithography.

5 . The method according to claim 1 , wherein the etching comprises at least one treatment with an etchant which is selected from the group consisting of chlorine, gaseous chlorine compounds, fluorinated hydrocarbons, fluorocarbons, oxygen, argon, SF 6 and mixtures thereof.

6 . The method according to claim 5 , wherein the etching comprises at least one treatment with a mixture of Ar/SF 6 /O 2 or Ar/SF 6 as etchant and at least one treatment with a mixture of Ar/CHF 3 as etchant.

7 . The method according to claim 1 , wherein each etching treatment is carried out for a period in the range of 30 s to 60 min.

8 . The method according to claim 1 , which further comprises a mechanical treatment of the protruding structures generated.

9 . The method according to claim 1 , which comprises a further etching treatment by reactive ion beam etching (RIBE), chemically assisted ion beam etching (CAIBE), reactive ion etching (RIE) or inductive coupled plasma (RIE-ICP), wherein the protruding structures generated in the at least one layer deposited in step b) are used as an etching mask and gradients of the protruding structures corresponding to the protruding structures of the at least one layer above are generated in the primary substrate and the layer(s) above said primary substrate are removed in part or completely.

10 . A nanostructured substrate comprising an array of protruding nanostructures, which are nanopillars, wherein the protruding nanostructures comprise at least 2 continuous gradients of geometric parameters of the protruding nanostructures on a single substrate.

11 . The nanostructured substrate according to claim 10 , wherein the protruding nanostructures have a mean height in the range from 800 nm to 1500 nm.

12 . The nanostructured substrate according to claim 10 , wherein the geometric parameters are members selected from the group consisting of a height, a diameter and a spacing of the protruding nanostructures.

13 . The nanostructured substrate according to claim 12 , wherein each of the protruding nanostructures simultaneously represents an element of 3 continuous gradients of the height, diameter and spacing of said protruding nanostructures.

14 . The nanostructured substrate according to claim 9 , which is an optical filter, and wherein the protruding structures form an anti-reflective surface structure on the optical filter.

15 . An optical device, comprising the nanostructured substrate according to claim 10 .

16 . A device comprising the nanostructured substrate according to claim 10 , wherein the device is configured for use in a field selected from the group consisting of semiconductor technology, optics, sensor technology and photovoltaics.

17 . The device according to claim 16 , which is configured for use in optical devices, CCD sensors or solar cells.

18 . The nanostructured substrate according to claim 10 , wherein the protruding nanostructures comprise at least 3 continuous gradients of geometric parameters of the protruding nanostructures on a single substrate.

19 . An optical device, comprising the nanostructured substrate according to claim 14 .

Assignees

• Max Planck Gesellschaft

Inventors

• Diao Zhaolu
• Dirks Jan-Henning
• Spatz Joachim P

Classifications

• B81C1/00031 Primary

  Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002) · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G02B1/118

  having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures · CPC title

• H01L31/00

  Electricity · mapped topic

• H10F99/00

  Subject matter not provided for in other groups of this subclass · CPC title