Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-12170209-B2
Application number	US-202117443358-A
Country	US
Kind code	B2
Filing date	Jul 26, 2021
Priority date	Jul 29, 2020
Publication date	Dec 17, 2024
Grant date	Dec 17, 2024

Abstract

A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
at least one processing part including a processing container and configured to etch a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid;
a reservoir configured to recover and store the chemical liquid used in the at least one processing part;
processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part;
a circulation line configured to take out the chemical liquid from the reservoir and to return the taken-out chemical liquid to the reservoir;
a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line;
a flow rate regulator configured to regulate a flow rate of the inert gas to be supplied to the circulation line by the first gas supply line;
a controller constituted by a computer and configured to control the flow rate regulator;
a container connected to the reservoir and configured to temporarily accommodate the chemical liquid and to deliver the chemical liquid to the reservoir;
a chemical liquid recovery line connected to the container and configured to return the chemical liquid after being used in the at least one processing part to the reservoir via the container; and
a second gas supply line connected to the container and configured to supply the inert gas into an interior of the container,
wherein the circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir,
wherein the container has a wall in which an opening is formed to allow the interior of the container and an interior of the reservoir to communicate with each other,
wherein the opening is arranged so as to be deviated from an extension line of a flow path of the chemical liquid recovery line, and
wherein the wall receives and repels the chemical liquid returned to the container by the chemical liquid recovery line.

2. The substrate processing apparatus of claim 1 , wherein the at least one processing part includes a plurality of processing parts,
the processing lines are provided in the plurality of processing parts, respectively, and
the controller is configured to control the flow rate regulator of the first gas supply line according to an operation number of the processing lines or a total flow rate of the processing lines.

3. The substrate processing apparatus of claim 2 , further comprising:
a chemical liquid supply line connected to the container and configured to supply the chemical liquid before being used in the at least one processing part to the reservoir via the container.

4. The substrate processing apparatus of claim 3 , wherein the container has the wall in which the opening is formed to allow the interior of the container and the interior of the reservoir to communicate with each other,
the opening is arranged so as to be deviated from the extension line of the flow path of the chemical liquid supply line, and
the wall receives and repels the chemical liquid supplied to the container by the chemical liquid supply line.

5. The substrate processing apparatus of claim 4 , wherein, in a liquid storage mode in which the chemical liquid supply line supplies the chemical liquid to the container and the processing lines stop supplying the chemical liquid to the at least one processing part, a flow rate of the inert gas supplied to the circulation line by the first gas supply line is higher than that in a substrate processing mode in which the chemical liquid supply line stops supplying the chemical liquid to the container and the processing lines supply the chemical liquid to the at least one processing part.

6. The substrate processing apparatus of claim 5 , further comprising:
a third gas supply line connected to the reservoir and configured to supply the inert gas to the reservoir while bypassing the container,
wherein, in a standby mode in which the chemical liquid supply line stops supplying the chemical liquid to the container and the processing lines stop supplying the chemical liquid to the at least one processing part, the third gas supply line supplies the inert gas to the reservoir.

7. The substrate processing apparatus of claim 5 , further comprising:
a fourth gas supply line connected to the chemical liquid recovery line and configured to supply the inert gas to the chemical liquid recovery line.

8. The substrate processing apparatus of claim 7 , wherein, in the liquid storage mode, a flow rate of the inert gas supplied to the chemical liquid recovery line by the fourth gas supply line is lower than that in the substrate processing mode.

Assignees

• Tokyo Electron Ltd

Inventors

• Yabuta Takashi
• Nakao Hidetoshi
• Kasahara Masatoshi
• Saiki Daisuke

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P72/0424 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/667

  by liquid etching only · CPC title