Film forming method for forming self-assembled monolayer on substrate

Patent metadata

Field	Value
Publication number	US-12152304-B2
Application number	US-202017028230-A
Country	US
Kind code	B2
Filing date	Sep 22, 2020
Priority date	Sep 24, 2019
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.

First claim

What is claimed is:

1. A film forming method for forming an object film on a substrate, the method comprising:
providing the substrate including an insulating layer and an oxide layer formed on a surface of a metal layer;
reducing the oxide layer by supplying hydrogen and argon;
forming a metal oxide layer which is uniform in a surface state, film thickness, and film quality by selectively oxidizing the surface of the metal layer under an oxygen atmosphere consisting of oxygen and argon after the reducing the oxide layer; and
forming a self-assembled monolayer on the surface of the metal layer through a reaction in which a raw material of the self-assembled monolayer is uniformly adsorbed on the metal oxide layer and the metal oxide layer is uniformly reduced, by supplying a raw material gas of the self-assembled monolayer, after the forming the metal oxide layer,
wherein the reducing the oxide layer is performed under a hydrogen atmosphere in which the hydrogen is less than 0.5% of an atmospheric gas within a process container, and
wherein the reducing the oxide layer and the forming the metal oxide layer are performed in the same process container.

2. The film forming method according to claim 1 , further comprising:
supplying alcohols to a surface of the substrate before forming the self-assembled monolayer after oxidizing the surface of the layer of the first material, or before oxidizing the surface of the layer of the first material after reducing the oxide layer.

3. The film forming method according to claim 2 , wherein the alcohols is isopropyl alcohol, methyl alcohol, ethyl alcohol, n-propyl alcohol, or t-butyl alcohol.

4. The film forming method according to claim 1 , wherein the metal layer includes copper.

5. The film forming method according to claim 1 , wherein the insulating layer includes silicon.

6. The film forming method according to claim 1 , wherein a material of the self-assembled monolayer is a material of a thiol-based self-assembled monolayer.

7. The film forming method according to claim 1 , further comprising forming the object film on a surface of the insulating layer.

Assignees

• Tokyo Electron Ltd

Inventors

• Azumo Shuji
• Ike Shinichi
• Kawano Yumiko

Classifications

• H10P14/6314

  of a metallic layer · CPC title

• H10P72/0466

  characterised by the construction of the load-lock chamber · CPC title

• H10P14/61

  using masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• C23C16/408

  of copper or solid solutions thereof · CPC title