Method of enhancing selective deposition by cross-linking of blocking molecules

Patent metadata

Field	Value
Publication number	US-11164745-B2
Application number	US-201816631983-A
Country	US
Kind code	B2
Filing date	Aug 1, 2018
Priority date	Aug 13, 2017
Publication date	Nov 2, 2021
Grant date	Nov 2, 2021

Abstract

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

First claim

What is claimed is:

1. A method of selective deposition comprising:
providing a substrate with a first material with a first surface and a second material with a second surface, the second material comprises a metal oxide or a dielectric material and the first material comprises a metal or silicon;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the first surface relative to the second surface, the blocking molecule having the general formula A-L-Z where A is a reactive head group, L is a linking group and Z is a reactive tail group;
exposing the blocking layer to a polymer initiator to form a networked blocking layer on the first surface; and
forming a layer selectively on the second surface relative to the first surface,
wherein the networked blocking layer inhibits deposition of the layer on the first surface.

2. The method of claim 1 , wherein the first material comprises a metal oxide or a dielectric material and the second material comprises a metal or silicon.

3. The method of claim 2 , wherein A is selected from the group consisting of (R 2 N) a R′ b Si—, X 3 Si— and (RO) 3 Si—, where each R and R′ is independently selected from C1-C6 alkyl, C1-C6 cycloakyl and C1-C6 aryl, a and b are integers such that a+b equals 3, and each X is independently selected from halogens.

4. The method of claim 2 , wherein the first material consists essentially of silicon oxide.

5. The method of claim 1 , wherein A is selected from the group consisting of (HO) 2 OP—, HS— and H 3 Si—.

6. The method of claim 1 , wherein L is —(CH 2 ) a — and n is an integer from 4 to 18.

7. The method of claim 6 , wherein n is 4 to 8.

8. The method of claim 1 , wherein Z is a group comprising one or more reactive moiety selected from alkenes, alkynes, alcohols, carboxylic acids, aldehydes, acyl halides, amines, amides, cyanates, isocyanates, thiocyanates, isothiocyanates, or nitriles.

9. The method of claim 8 , wherein the blocking molecule comprises more than one reactive moiety.

10. The method of claim 9 , wherein the reactive moieties are positioned in a linear fashion.

11. The method of claim 9 , wherein the reactive moieties are positioned in a branched fashion.

12. The method of claim 1 , wherein the blocking compound comprises at least two different blocking molecules.

13. The method of claim 1 , wherein the polymer initiator comprises one or more of a radiation treatment, a thermal treatment, plasma treatment or chemical treatment.

14. The method of claim 13 , wherein the polymer initiator consists essentially of radiation treatment or thermal treatment.

15. The method of claim 13 , wherein the chemical treatment comprises a radical initiator selected from peroxides, organometallic complexes, or azobisisobutyronitrile (AIBN).

16. The method of claim 13 , wherein the chemical treatment comprises exposing the blocking layer to an amine or alcohol with multiple functional groups.

17. The method of claim 1 , wherein the second surface consists essentially of silicon oxide.

18. A method of selective deposition comprising:
providing a substrate with a first material comprising silicon oxide with a first surface and a second material comprising silicon metal with a second surface;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the first surface relative to the second surface, the blocking molecule having the general formula ((CH 3 ) 2 N) 3 SiC 6 H 12 COOH;
exposing the blocking layer to a polymer initiator comprising ethylene diamine to form a networked blocking layer on the first surface; and
forming a layer selectively on the second surface relative to the first surface, wherein the networked blocking layer inhibits deposition of the layer on the first surface.

19. A method of selective deposition comprising:
providing a substrate with a first material comprising cobalt with a first surface and a second material comprising silicon oxide with a second surface;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the first surface relative to the second surface, the blocking molecule having the structure

exposing the blocking layer to a polymer initiator comprising AIBN to form a networked blocking layer on the first surface; and
forming a layer selectively on the second surface relative to the first surface, wherein the networked blocking layer inhibits deposition of the layer on the first surface.

Assignees

• Applied Materials Inc

Inventors

• Saly Mark
• Bhuyan Bhaskar Jyoti

Classifications

• H10P14/61

  using masks · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title