Methods of fabricating nanoscale structures usable in molecular sensors and other devices

Patent metadata

Field	Value
Publication number	US-12146852-B2
Application number	US-202017639498-A
Country	US
Kind code	B2
Filing date	Aug 18, 2020
Priority date	Sep 6, 2019
Publication date	Nov 19, 2024
Grant date	Nov 19, 2024

Abstract

A structure usable in a molecular sensor device comprises a substrate defining a substrate plane and spaced apart pairs of reducible metal oxide or metal nitride sheets attached to the substrate at an angle to the substrate plane. The structure further includes intervening dielectric sheets. Fabrication methods for manufacturing structures for molecular sensors are disclosed comprising oblique angle deposition of reducible metal oxide or metal nitride and dielectric layers, planarization of the resulting stack, and reduction of portions of the reducible metal oxide or metal nitride sheets to the corresponding base metal.

First claim

The invention claimed is:

1. A method of manufacturing a structure usable in a molecular sensor device, the method comprising:
providing a substrate defining a substrate plane with a protrusion protruding from the substrate at an angle to the substrate plane;
depositing a first reducible metal oxide or metal nitride layer in an orientation along a side of the protrusion to form a first reducible metal oxide or metal nitride sheet at the angle to the substrate plane;
depositing an inner dielectric layer on the first reducible metal oxide or metal nitride layer to form an inner dielectric sheet at the angle to the substrate plane;
depositing a second reducible metal oxide or metal nitride layer on the inner dielectric layer to form a second reducible metal oxide or metal nitride sheet at the angle to the substrate plane, wherein the first reducible metal oxide or metal nitride sheet and the second reducible metal oxide or metal nitride sheet form a pair of sheets spaced apart by the inner dielectric sheet between the first reducible metal oxide or metal nitride sheet and the second reducible metal oxide or metal nitride sheet;
depositing an outer dielectric layer on the second reducible metal oxide or metal nitride layer to form an outer dielectric sheet at an angle to the substrate plane;
repeating the depositing of the first reducible metal oxide or metal nitride layer, the inner dielectric layer, the second reducible metal oxide or metal nitride layer, and the outer dielectric layer at least once to form spaced apart pairs of reducible metal oxide or metal nitride sheets with an inner dielectric sheet between each reducible metal oxide or metal nitride sheet in the pair of reducible metal oxide or metal nitride sheets and an outer dielectric sheet between each pair of reducible metal oxide or metal nitride sheets;
planarizing the pairs of reducible metal oxide or metal nitride sheets, the inner dielectric sheets, and the outer dielectric sheets to form exposed end portions of each; and
reducing the exposed end portions of the reducible metal oxide or metal nitride sheets to the corresponding metal to form parallel metal electrode strips.

2. The method of claim 1 , wherein each inner dielectric layer is deposited with a first thickness and each outer dielectric sheet is deposited with a second thickness at least one order of magnitude greater than the first thickness.

3. The method of claim 1 , further comprising attaching a mechanically supportive block material adjacent a stack formed by the deposited first reducible metal oxide or metal nitride layers, inner dielectric layers, second reducible metal oxide or metal nitride layers, and outer dielectric layers, prior to the step of planarizing.

4. The method of claim 1 , wherein the inner dielectric sheets and the outer dielectric sheets comprise different dielectric materials.

5. The method of claim 1 , wherein reducing the exposed end portions of the reducible metal oxide or metal nitride sheets to the corresponding metal comprises exposure to H 2 .

6. The method of claim 1 , further comprising placing at least one portion of a dielectric mask layer across the metal electrode strips to leave short segments of electrode strips exposed in a gap and depositing metal islands on the short segments of electrode strips.

7. The method of claim 5 , wherein the gap measures from about 2 nm to about 40 nm.

8. The method of claim 1 , further comprising connecting a plurality of lead conductors to metal electrode strips with each lead conductor connected to a respective electrode strip, wherein each lead conductor diverges in width as the lead conductor extends away from an edge of the electrode strip.

9. The method of claim 1 , further comprising depositing a gate electrode parallel to the substrate plane and perpendicular to a reducible metal oxide or metal nitride plane defined by a reducible metal oxide or metal nitride sheet in the spaced apart pairs of reducible metal oxide or metal nitride sheets.

10. A method of manufacturing a structure usable in a molecular sensor device, the method comprising:
providing a substrate defining a substrate plane with a protrusion protruding from the substrate at an angle to the substrate plane;
depositing a first reducible metal oxide or metal nitride layer in an orientation along a side of the protrusion to form a first reducible metal oxide or metal nitride sheet at the angle to the substrate plane;
depositing an inner dielectric layer on the first reducible metal oxide or metal nitride layer to form an inner dielectric sheet at the angle to the substrate plane;
depositing a second reducible metal oxide or metal nitride layer on the inner dielectric layer to form a second reducible metal oxide or metal nitride sheet at the angle to the substrate plane, wherein the first reducible metal oxide or metal nitride sheet and the second reducible metal oxide or metal nitride sheet form a pair of sheets spaced apart by the inner dielectric sheet between the first reducible metal oxide or metal nitride sheet and the second reducible metal oxide or metal nitride sheet;
depositing an outer dielectric layer on the second reducible metal oxide or metal nitride layer to form an outer dielectric sheet at an angle to the substrate plane;
repeating the depositing of the first reducible metal oxide or metal nitride layer, the inner dielectric layer, the second reducible metal oxide or metal nitride layer, and the outer dielectric layer at least once to form spaced apart pairs of reducible metal oxide or metal nitride sheets with an inner dielectric sheet between each reducible metal oxide or metal nitride sheet in the pair of reducible metal oxide or metal nitride sheets and an outer dielectric sheet between each pair of reducible metal oxide or metal nitride sheets;
planarizing the pairs of reducible metal oxide or metal nitride sheets, the inner dielectric sheets, and the outer dielectric sheets to form exposed end portions of each;
selectively etching an exposed end portion of each inner dielectric sheet to form grooves in each inner dielectric sheet descending from the planarized edge toward the substrate;
filling the grooves with PMMA-type resist material;
depositing a metal layer on the planarized surface of the structure; and
removing the PMMA-type resist material along with deposited metal residing thereon leaving an arrangement of pairs of spaced apart parallel metal electrode strips with the metal electrode strips in a pair of strips separated by a groove.

11. The method of claim 10 , further comprising attaching a mechanically supportive block material adjacent a stack formed by the deposited first reducible metal oxide or metal nitride layers, inner dielectric layers, second reducible metal oxide or metal nitride layers, and outer dielectric layers, prior to the step of planarizing.

12. The method of claim 10 , wherein the inner dielectric sheets and the outer dielectric sheets comprise different dielectric materials.

13. The method of claim 10 , wherein the inner dielectric layer has a first thickness and the outer dielectric layer has a second thickness at least one order of magnitude greater than the first thickness.

14. The method of claim 10 , further comprising placing at least one portion of a dielectric mask layer across the metal electrode strips to leave short segments of electrode strips exposed in a gap and depositing metal islands on the short segments of electrode strips.

15. The method of claim 14 , wherein the gap measures from about 2 nm to about 40 nm.

16. A structure usable in a molecular sensor

Assignees

• Roswell Biotechnologies Inc

Inventors

• Jin Sungho
• Merriman Barry
• Geiser Tim
• Mola Paul W

Classifications

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10F39/028

  performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation · CPC title

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• H01L27/14698

  Electricity · mapped topic

• H01L21/02356

  Electricity · mapped topic