Method of isolating bad pixels on a wafer
US-9530820-B1 · Dec 27, 2016 · US
performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10F39/028 |
| Official title | {performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation} |
| Display label | performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation |
| Total patents | 578 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 43 |
| 2016 | 76 |
| 2017 | 76 |
| 2018 | 60 |
| 2019 | 49 |
| 2020 | 51 |
| 2021 | 46 |
| 2022 | 50 |
| 2023 | 42 |
| 2024 | 40 |
| 2025 | 42 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensor
US-2016315117-A1 · Oct 27, 2016 · US
Free-Edge Semiconductor Chip Bending
US-2016293429-A1 · Oct 6, 2016 · US
Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters
US-9461089-B2 · Oct 4, 2016 · US
Fabricating method of back-illuminated image sensor with dishing depression surface
US-2016260769-A1 · Sep 8, 2016 · US
Back-illuminated image sensor with dishing depression surface
US-9401441-B2 · Jul 26, 2016 · US
Method of manufacturing semiconductor device
US-2016163764-A1 · Jun 9, 2016 · US
Photodiode insulation structure
US-2016104730-A1 · Apr 14, 2016 · US
Miniature wafer-level camera modules
US-2016099284-A1 · Apr 7, 2016 · US
Image Sensor Bending Using Tension
US-2016086994-A1 · Mar 24, 2016 · US
Image Sensor Bending By Induced Substrate Swelling
US-2016086987-A1 · Mar 24, 2016 · US
Methods of forming an image sensor
US-2016079288-A1 · Mar 17, 2016 · US
Method of manufacturing semiconductor device
US-9263498-B2 · Feb 16, 2016 · US
Semiconductor device
US-2016043118-A1 · Feb 11, 2016 · US
Image sensor device with damage reduction
US-2016020244-A1 · Jan 21, 2016 · US
Solid-state imaging device and method for manufacturing solid-state imaging device
US-2016013228-A1 · Jan 14, 2016 · US
Solid state image sensor and method for manufacturing the same
US-2016005782-A1 · Jan 7, 2016 · US
Method of manufacturing semiconductor device
US-2015372049-A1 · Dec 24, 2015 · US
Method of manufacturing semiconductor device and structure
US-2015364514-A1 · Dec 17, 2015 · US
Apparatus for and method of crystallizing active layer of thin film transistor
US-2015348782-A1 · Dec 3, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10F39/028?
- CPC H10F39/028 is the Cooperative Patent Classification code for “performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation.”
- How many patents are filed under CPC H10F39/028 (performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation)?
- Our database includes 578 publications tagged with this CPC code.
- Is patent activity under CPC H10F39/028 growing?
- Publication counts under this code: 40 in 2024 vs 42 in 2025 (latest complete years).