TDMR SOT read heads having recessed topological insulator materials

US12136446B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12136446-B2
Application numberUS-202318226625-A
CountryUS
Kind codeB2
Filing dateJul 26, 2023
Priority dateOct 31, 2022
Publication dateNov 5, 2024
Grant dateNov 5, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.

First claim

Opening claim text (preview).

What is claimed is: 1. A read head, comprising: a lower shield extending to a media facing surface (MFS); a first spin-orbit torque (SOT) stack disposed over the lower shield, the first SOT stack comprising: a first SOT layer recessed from the MFS; and a first free layer disposed over the first SOT layer, the first free layer being exposed at the MFS; a middle shield disposed over the first free layer, the middle shield extending to the MFS; a second SOT stack disposed over the middle shield, the second SOT stack comprising: a second SOT layer recessed from the MFS; and a second free layer disposed over the second SOT layer, the second free layer being exposed at the MFS; and an upper shield disposed over the second free layer, the upper shield extending to the MFS. 2. The read head of claim 1 , further comprising: a first notch disposed on the lower shield at the MFS, wherein the first SOT layer is disposed adjacent to the first notch; a first insulation layer disposed on the first notch at the MFS, the first insulation layer being in contact with the first free layer and the first SOT layer; a second notch disposed on the middle shield at the MFS, wherein the second SOT layer is disposed adjacent to the second notch; and a second insulation layer disposed on the second notch at the MFS, the second insulation layer being in contact with the second free layer and the second SOT layer. 3. The read head of claim 2 , wherein a first read gap is defined from the first notch to the middle shield, and wherein a second read gap is defined from the second notch to the upper shield. 4. The read head of claim 1 , further comprising: first soft bias (SB) side shields disposed adjacent to the first free layer at the MFS, the first SB side shields being disposed in contact with the middle shield; and second SB side shields disposed adjacent to the second free layer and the MFS, the second SB side shields being disposed in contact with the upper shield. 5. The read head of claim 1 , wherein the first SOT layer and the second SOT layer are each recessed a distance of about 5 nm to about 20 nm from the MFS. 6. The read head of claim 5 , wherein the first free layer and the second free layer each have a length extending from the MFS into the read head greater than the distance the first SOT layer and the second SOT layer are recessed from the MFS. 7. The read head of claim 1 , further comprising means for flowing a current vertically through the upper shield into the second SOT stack and the first SOT stack to the lower shield. 8. A magnetic recording head comprising the read head of claim 1 . 9. A magnetic recording device comprising the magnetic recording head of claim 8 . 10. A read head, comprising: a first reader, the first reader comprising: a first lower shield extending to a media facing surface (MFS); a first spin-orbit torque (SOT) layer disposed over the first lower shield, the first SOT layer being recessed from the MFS; a first free layer disposed over the first SOT layer, the first free layer being exposed at the MFS; and a first upper shield disposed over the first free layer; and a second reader disposed over the first upper shield, the second reader comprising: a second lower shield extending to the MFS; a second SOT layer disposed over the second lower shield, the second SOT layer being recessed from the MFS; a second free layer disposed over the second SOT layer, the second free layer being exposed at the MFS; and a second upper shield disposed over the second free layer. 11. The read head of claim 10 , further comprising a first insulation layer disposed between and in contact with the first upper shield and the second lower shield. 12. The read head of claim 10 , further comprising: a first notch disposed on the first lower shield at the MFS, wherein the first SOT layer is disposed adjacent to the first notch; and a second notch disposed on the second lower shield at the MFS, wherein the second SOT layer is disposed adjacent to the second notch. 13. The read head of claim 12 , further comprising: a second insulation layer disposed on the first notch at the MFS, the second insulation layer being in contact with the first free layer and the first SOT layer; and a third insulation layer disposed on the second notch at the MFS, the third insulation layer being in contact with the second free layer and the second SOT layer. 14. The read head of claim 13 , wherein the first SOT layer and the second SOT layer are each recessed a first distance of about 5 nm to about 20 nm from the MFS, and wherein a first length of the second insulation layer is equal to the first distance. 15. The read head of claim 14 , wherein the first free layer and the second free layer each have a second length greater than the first length. 16. The read head of claim 10 , further comprising: means for flowing a first current through the first lower shield, the first SOT layer, and the first free layer to the first upper shield; and means for flowing a second current through the second upper shield, the second SOT layer, and the second free layer to the second lower shield. 17. A magnetic recording head comprising the read head of claim 10 . 18. A magnetic recording device comprising the magnetic recording head of claim 17 . 19. A read head, comprising: a lower shield extending to a media facing surface (MFS); a first SOT layer disposed over the lower shield, the first SOT layer being recessed from the MFS; a first free layer disposed in contact with the first SOT layer, the first free layer being exposed at the MFS; a second SOT layer disposed over the first free layer, the second SOT layer being recessed from the MFS; a second free layer disposed in contact with the second SOT layer, the second free layer being exposed at the MFS; and an upper shield disposed over the second free layer, the upper shield extending to the MFS. 20. The read head of claim 19 , further comprising a middle shield disposed between the first free layer and the second SOT layer. 21. The read head of claim 20 , further comprising: a first notch disposed on the lower shield at the MFS, wherein the first SOT layer is disposed adjacent to the first notch; and a second notch disposed on the middle shield at the MFS, wherein the second SOT layer is disposed adjacent to the second notch. 22. The read head of claim 21 , further comprising: a first insulation layer disposed on the first notch at the MFS, the first insulation layer being in contact with the first free layer and the first SOT layer; and a second insulation layer disposed on the second notch at the MFS, the second insulation layer being in contact with the second free layer and the second SOT layer. 23. The read head of claim 21 , wherein a first read gap is defined from the first notch to the middle shield, and wherein a second read gap is defined from the second notch to the upper shield. 24. The read head of claim 19 , wherein the first SOT layer and the second SOT layer are each recessed a first distance of about 5 nm to about 20 nm from the MFS. 25. The read head of claim 19 , wherein the first free layer and the second free layer each have a length extending from the MFS into the read head greater than the distance the first SOT layer and the second SOT layer are recessed from the MFS. 26. The read head of claim 19 , fu

Assignees

Inventors

Classifications

  • Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks (G11B5/3113, G11B5/245 take precedence) · CPC title

  • including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure (G11B5/3106 takes precedence) · CPC title

  • Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

  • G11B5/11Primary

    Shielding of head against electric or magnetic fields · CPC title

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What does patent US12136446B2 cover?
The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing…
Who is the assignee on this patent?
Western Digital Tech Inc
What technology area does this patent fall under?
Primary CPC classification G11B5/11. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 05 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).