Magnetic sensor using inverse spin hall effect

Patent metadata

Field	Value
Publication number	US-9947347-B1
Application number	US-201615385595-A
Country	US
Kind code	B1
Filing date	Dec 20, 2016
Priority date	Dec 20, 2016
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.

First claim

What is claimed is:

1. A magnetic sensor, comprising:
a magnetic free layer;
a spin Hall layer formed of an electrically conductive, non-magnetic material formed adjacent to the magnetic free layer, wherein the magnetic free layer extends from a media facing surface to a first distance that defines a stripe height, and wherein the spin Hall layer extends from the media facing surface to a second distance that is greater than the first distance;
circuitry configured to cause an electrical current to flow through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to the plane of the layers; and
circuitry for measuring a voltage across the spin Hall layer in a direction that is substantially perpendicular to the direction of the electrical current.

2. The magnetic sensor as in claim 1 , wherein the electrical current flowing through the magnetic free layer and the spin Hall layer results in an electrical voltage in the spin Hall layer as a result of inverse spin Hall effect.

3. The magnetic sensor as in claim 1 , wherein the spin Hall layer is constructed of a heavy metal.

4. The magnetic sensor as in claim 1 , wherein the spin Hall layer comprises one or more of: Ta, W, Pt, Hf and Bi.

5. The magnetic sensor as in claim 1 , wherein the spin Hall layer is formed of a material having a spin diffusion length, and wherein the difference between the first and second distances is substantially equal to the spin diffusion length of spin Hall layer.

6. The magnetic sensor as in claim 1 , wherein the spin Hall layer is formed of a material having a spin diffusion length and wherein the difference between the first and second distances is equal to the spin diffusion length plus or minus 10%.

7. The magnetic sensor as in claim 1 , wherein the spin Hall layer is in direct contact with the magnetic free layer.

8. The magnetic sensor as in claim 1 , wherein:
the spin Hall layer is in direct contact with the magnetic free layer, defining an interface between the spin Hall layer and the magnetic free layer;
the spin Hall layer comprises a material having a spin diffusion length; and
the spin Hall layer has a thickness measured perpendicular to the interface that is substantially equal to the spin diffusion length.

9. The magnetic sensor as in claim 1 , wherein:
the spin Hall layer is in direct contact with the magnetic free layer, defining an interface between the spin Hall layer and the magnetic free layer;
the spin Hall layer comprises a material having a spin diffusion length; and
the spin Hall layer has a thickness measured perpendicular to the interface that is equal to the spin diffusion length plus or minus 10%.

10. The magnetic sensor as in claim 1 , wherein the voltage is measured in a region beyond the stripe height.

11. The magnetic sensor as in claim 1 , wherein the voltage is measured in a region that is just slightly beyond the stripe height.

12. The magnetic sensor as in claim 1 , wherein the voltage is measured in a region that is between the media facing surface and the stripe height.

13. The magnetic sensor as in claim 1 , wherein the magnetic free layer is a single magnetic layer.

14. The magnetic sensor as in claim 1 , wherein the magnetic free layer is a structure that includes first and second magnetic layers that are antiparallel coupled by a non-magnetic layer located between the first and second magnetic layers.

15. The magnetic sensor as in claim 1 , wherein the magnetic free layer is a first magnetic free layer located at a first side of the spin Hall layer, the sensor further comprising a second magnetic free layer located at a second side of the spin Hall layer that is opposite to the first side of the spin Hall layer.

16. The magnetic sensor as in claim 1 , wherein the spin Hall layer comprises a material having a strong spin orbit coupling effect.

17. A magnetic data recording system, comprising:
a housing;
a magnetic media mounted within the housing;
an actuator;
a slider connected with the actuator for movement adjacent to the magnetic media; and
a magnetic sensor formed on the slider, the magnetic sensor comprising a magnetic free layer, and a spin Hall layer formed of an electrically conductive, non-magnetic material formed adjacent to and directly in contact with the magnetic free layer, wherein the magnetic free layer extends from a media facing surface to a first distance that defines a stripe height, and wherein the spin Hall layer extends from the media facing surface to a second distance that is greater than the first distance;
circuitry configured to cause an electrical current to flow through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to the plane of the layers; and
circuitry for measuring a voltage across the spin Hall layer in a direction that is substantially perpendicular to the direction of the electrical current.

18. The magnetic data recording system as in claim 17 , wherein the electrical current flowing through the magnetic free layer and the spin Hall layer results in an electrical voltage in the spin Hall layer as a result of inverse spin Hall effect.

19. The magnetic data recording system as in claim 17 , wherein the spin Hall layer comprises one or more of: Ta, W, Pt, Hf and Bi.

20. A magnetic sensor, comprising:
a magnetic free layer;
a spin Hall layer formed of a non-magnetic, electrically conductive layer formed adjacent to magnetic free layer, wherein the magnetic free layer extends from a media facing surface to a first distance and the non-magnetic, electrically conductive layer extends from the media facing surface to a second distance that is greater than the first distance; and
means for generating a voltage in the non-magnetic layer as a result of inverse spin Hall effect, the voltage being effected by a direction magnetization of the magnetic free layer.

21. The magnetic sensor as in claim 20 , further comprising means for causing a current to flow through the magnetic free layer in a direction that is perpendicular to a plane defined by the magnetic free layer.

22. The magnetic sensor as in claim 21 , further comprising means for detecting the voltage in the non-magnetic, electrically conductive layer.

23. The magnetic sensor as in claim 21 , wherein the voltage is measured in a direction that is perpendicular to the direction of current flow.

24. The magnetic sensor as in claim 20 , wherein the non-magnetic, electrically conductive layer is a heavy metal.

25. The magnetic sensor as in claim 20 , wherein the non-magnetic, electrically conductive layer comprises one or more of Ta, W, Pt, Hf and Bi.

26. The magnetic sensor as in claim 20 , wherein the non-magnetic, electrically conductive layer has a spin diffusion length and wherein the second distance is greater than the first distance by an amount that is about equal to the spin diffusion length of the non-magnetic, electrically conductive layer.

27. The magnetic sensor as in claim 20 , wherein the non-magnetic, electrically conductive layer has a spin diffusion length and wherein the second distance is greater than the first distance by an amount that is equal to the spin diffusion length of the non-magnetic, electrically conductive layer plus or minus 10%.

28. The magnetic sensor as in claim 20 , wherein
the magnetic free layer is in contact with the non-magne

Assignees

• Western Digital Tech Inc

Inventors

• Van Der Heijden Petrus Antonius
• Le Quang
• Ho Kuok San
• Liu Xiaoyong
• Baião De Albuquerque Gonçalo Marcos

Classifications

• G11B5/1278

  specially adapted for magnetisations perpendicular to the surface of the record carrier · CPC title

• G11B5/372 Primary

  in magnetic thin films · CPC title

• G01R33/075

  Hall devices configured for spinning current measurements · CPC title

• G11B5/374

  Integrated structures · CPC title

• H01J43/06

  Electrode arrangements · CPC title