Reader noise reduction using spin hall effects

US11205447B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11205447-B2
Application numberUS-201916546397-A
CountryUS
Kind codeB2
Filing dateAug 21, 2019
Priority dateAug 21, 2019
Publication dateDec 21, 2021
Grant dateDec 21, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S 2 ). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S 1 ). In a three terminal configuration, a first current flows between S 1 and S 2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S 1 , or vice versa.

First claim

Opening claim text (preview).

We claim: 1. A read head, comprising: (a) a bottom shield (S 1 ) having a front side at an air bearing surface (ABS), and a top surface; (b) a top shield (S 2 ) having a front side at the ABS, and a bottom surface; (c) a magnetoresistive (MR) sensor formed on S 1 at the ABS, comprising: (1) a free layer (FL) with a magnetization in a first cross-track (longitudinal) direction, a front side at the ABS, and a back side at a first stripe height (SH 1 ) from the ABS; (2) an AP1 reference layer with a magnetization that is orthogonal to the ABS in a first transverse direction, and wherein the AP1 reference layer is antiferromagnetically (AF) coupled to an AP2 reference layer through an AF coupling layer; and (3) a non-magnetic layer between the FL and AP1 reference layer; and (d) a Spin Hall Effect (SHE) layer comprised of a positive Spin Hall Angle (SHA) material and formed on the FL and with a second stripe height (SH 2 ) between a front side and backside thereof, and wherein a top surface of the SHE layer is separated from the S 2 bottom surface by an insulation layer, and wherein the SHE layer is configured to spin polarize a current and generate a first spin torque on the FL that opposes a second spin torque generated by the AP1 reference layer on the FL when the current flows from a first side of the SHE layer to a second side of the SHE layer in the first cross-track direction when a portion of the current flows through the MR sensor from the SHE layer to the S 1 , or the current flows from the second side of the SHE layer to the first side of the SHE layer in a direction opposite to the first cross-track direction when the portion of current through the MR sensor flows from the S 1 to the SHE layer thereby reducing spin torque induced magnetic noise in the FL. 2. The read head of claim 1 wherein the SHE layer has a down-track thickness less than 12 nm. 3. The read head of claim 1 wherein the SHE layer has an absolute value for SHA that is >0.05. 4. The read head of claim 1 wherein the SHE layer front side is at the ABS. 5. The read head of claim 4 wherein the SHE layer backside is formed between the ABS and a bottom portion of S 2 that has a front side at height h 2 from the ABS where h 2 >SH 2 . 6. The read head of claim 1 wherein the SHE layer front side is recessed behind a bottom portion of S 2 . 7. The read head of claim 1 wherein the non-magnetic layer is a tunnel barrier layer. 8. The read head of claim 1 wherein the MR sensor is further comprised of an antiferromagnetic (AFM) layer that is formed behind an upper portion of S 1 , and wherein the AFM layer pins a magnetization in the AP2 reference layer. 9. The read head of claim 1 wherein SH 2 is greater than SH 1 . 10. A head gimbal assembly (HGA), comprising: (a) the read head of claim 1 ; and (b) a suspension that elastically supports the read head, wherein the suspension has a flexure to which the read head is joined, a load beam with one end connected to the flexure, and a base plate connected to the other end of the load beam. 11. A magnetic recording apparatus, comprising: (a) the HGA of claim 10 ; (b) a magnetic recording medium positioned opposite to a slider on which the read head is formed; (c) a spindle motor that rotates and drives the magnetic recording medium; and (d) a device that supports the slider, and that positions the slider relative to the magnetic recording medium.

Assignees

Inventors

Classifications

  • Magnetic biasing films · CPC title

  • G11B5/3909Primary

    Arrangements using a magnetic tunnel junction · CPC title

  • using galvano-magnetic devices, e.g. Hall-effect devices (G11B5/39 takes precedence){using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect} · CPC title

  • Heads comprising more than one sensitive element · CPC title

  • Specially shaped layers · CPC title

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What does patent US11205447B2 cover?
A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S 2 ). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S 1 ). In a three terminal configuration, a first current flows bet…
Who is the assignee on this patent?
Headway Tech Inc
What technology area does this patent fall under?
Primary CPC classification G11B5/3909. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 21 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).