Metallization lines on integrated circuit products

Patent metadata

Field	Value
Publication number	US-12131994-B2
Application number	US-202318362044-A
Country	US
Kind code	B2
Filing date	Jul 31, 2023
Priority date	Oct 4, 2016
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

An integrated circuit product includes a first layer of insulating material above a device layer of a semiconductor substrate and with a lowermost surface above an uppermost surface of a gate of a transistor in a device layer of the semiconductor substrate. A metallization blocking structure is in an opening in the first layer of insulating material and has a lowermost surface above the uppermost surface of the gate and includes a second insulating material that is different from the first insulating material. A metallization trench is in the first layer of insulating material on opposite sides of the metallization blocking structure. A contact structure is in the second insulating material and entirely below the metallization trench. A conductive metallization line includes first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure and a long axis extending along the first and second portions.

First claim

What is claimed:

1. An integrated circuit product, comprising:
a first layer of insulating material including a first insulating material, the first layer of insulating material having a lowermost surface positioned above an uppermost surface of a gate of a transistor in a device layer of a semiconductor substrate;
a metallization blocking structure positioned in an opening in the first layer of insulating material, the metallization blocking structure having a lowermost surface above the uppermost surface of the gate and above a second insulating material that is different from the first insulating material, wherein the metallization blocking structure is positioned entirely above the second insulating material;
a metallization trench defined in the first layer of insulating material on opposite sides of the metallization blocking structure;
a contact structure positioned in the second insulating material, wherein the contact structure is positioned entirely below the metallization trench; and
a conductive metallization line including a lowermost surface above the uppermost surface of the gate and first and second portions positioned in the metallization trench on opposite sides of the metallization blocking structure, wherein the conductive metallization line has a long axis extending along the first and second portions.

2. The integrated circuit product of claim 1 , wherein the first insulating material and the second insulating material are selectively etchable relative to one another.

3. The integrated circuit product of claim 1 , wherein the first insulating material comprises silicon and oxygen, the second insulating material comprises silicon and nitrogen, the conductive metallization line comprises one of a metal or a metal alloy.

4. The integrated circuit product of claim 1 , wherein the contact structure comprises one of a gate contact, a source/drain contact or a conductive via.

5. The integrated circuit product of claim 1 , wherein the opening extends through an entire vertical thickness of the first layer of insulating material.

6. The integrated circuit product of claim 1 , wherein a first portion of the conductive metallization line physically contacts a portion of a first side of the metallization blocking structure and a second portion of the conductive metallization line physically contacts a second side of the metallization blocking structure that is opposite to the first side of the metallization blocking structure.

7. The integrated circuit product of claim 1 , wherein the second insulating material comprises a material having a k value of less than 7.

8. The integrated circuit product of claim 1 , wherein the metallization blocking structure has a vertical thickness that is less than a vertical thickness of the first layer of insulating material and wherein a bottom surface of the metallization blocking structure is positioned on and in contact with a portion of the first layer of insulating material.

9. The integrated circuit product of claim 1 , wherein the metallization blocking structure has a rectangular configuration when viewed from above.

10. The integrated circuit product of claim 1 , further comprising a second layer of insulating material positioned below the first layer of insulating material, wherein the metallization blocking structure directly contacts the second layer of insulating material.

11. The integrated circuit product of claim 10 , wherein the opening extends vertically into the second layer of insulating material.

12. The integrated circuit product of claim 1 , further comprising a second layer of insulating material positioned below the first layer of insulating material, wherein the second layer of insulating material comprises the first insulating material.

13. The integrated circuit product of claim 12 , wherein the first insulating material comprises silicon and oxygen.

14. The integrated circuit product of claim 12 , wherein the first insulating material comprises a low-k material.

15. The integrated circuit product of claim 1 , wherein the metallization blocking structure has a width greater than a width of the conductive metallization line.

16. The integrated circuit product of claim 15 , wherein the second insulating material comprises a material having a k value of less than 7.

17. The integrated circuit product of claim 1 , wherein the first insulating material has a k value of less than 3.5.

18. The integrated circuit product of claim 1 , wherein the first insulating material comprises silicon and oxygen.

19. The integrated circuit product of claim 1 , wherein the second insulating material comprises silicon and nitrogen.

Assignees

• Globalfoundries Us Inc

Inventors

• Xie Ruilong
• Liebmann Lars
• Chanemougame Daniel
• Han Geng

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10W20/075

  of multilayered thin functional dielectric layers · CPC title

• H10W20/071

  of dielectric parts thereof · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title