Plasma processing system and method using radio frequency and microwave power

Patent metadata

Field	Value
Publication number	US-12131887-B2
Application number	US-202117307654-A
Country	US
Kind code	B2
Filing date	May 4, 2021
Priority date	Feb 3, 2021
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

First claim

What is claimed is:

1. A plasma processing system comprising:
a vacuum system;
a plasma processing chamber comprising:
a chamber cavity coupled to the vacuum system; and
a substrate holder comprising a surface inside the chamber cavity;

a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity;
a microwave source coupled to a microwave oscillator; and
an electromagnetic (EM) metasurface, the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

2. The system of claim 1 , further comprising a tuner configured to adjust a frequency of the microwave oscillator, wherein the microwave source comprises a microwave antenna.

3. The system of claim 1 ,
wherein the substrate holder comprises an electrically conductive pedestal, a portion of the pedestal comprising the EM metasurface with the major surface of the EM metasurface facing the chamber cavity, the EM metasurface being isolated from ambient conditions in the chamber cavity by a separator comprising a solid dielectric layer disposed between the major surface of the EM metasurface and the chamber cavity.

4. The system of claim 1 , wherein the EM metasurface comprises a conductor, the major surface of the EM metasurface comprising a two-dimensional (2D) pattern of openings, the openings comprising an insulator.

5. The system of claim 4 , wherein the openings have a conductive bottom wall located at a depth, the depth being a distance of the conductive bottom wall from the top of the opening.

6. The system of claim 4 , wherein the openings extend through the conductor.

7. The system of claim 4 , wherein the 2D pattern of openings is an array of openings, the openings being shaped like lines, wherein the lines have a length dimension greater than a width dimension.

8. The system of claim 4 , wherein the 2D pattern of openings is an array of openings, the openings being shaped like prisms, the prisms having lateral dimensions of roughly equal size.

9. The system of claim 1 , wherein the EM metasurface comprises a microstrip metamaterial, the major surface of the EM metasurface comprising a 2D arrangement of microstrips, each microstrip being a 2D pattern of conductive material embedded inside a solid dielectric layer.

10. The system of claim 9 , wherein the 2D pattern of conductive material of the microstrip is shaped like a comb, wherein each tooth of the comb is shaped like a rectangle.

11. The system of claim 9 , wherein the 2D pattern of conductive material of the microstrip is shaped like a split ring resonator, wherein the split ring resonator is shaped like an incomplete rectangular ring having a break in one side of the ring.

12. The system of claim 1 ,
wherein the plasma processing chamber is an inductively coupled plasma (ICP) chamber, a portion of the ICP chamber comprising a solid dielectric window being disposed opposite of the substrate holder;
wherein the RF source electrode is an RF coil disposed outside the plasma processing chamber adjacent to the solid dielectric window; and
wherein the EM metasurface is buried in the solid dielectric window with the major surface of the EM metasurface being opposite the substrate holder.

13. The system of claim 1 ,
wherein the plasma processing chamber is a capacitively coupled plasma (CCP) chamber having an electrode shaped like a plate and disposed opposite of the substrate holder; and
wherein the EM metasurface is disposed below the electrode with the major surface of the EM metasurface being opposite the substrate holder, the major surface of the EM metasurface and the bottom surface of the electrode being buried in a dielectric overlayer.

14. The system of claim 1 ,
wherein the plasma processing chamber is a capacitively coupled plasma (CCP) chamber having an electrode shaped like a plate, the electrode comprising a surface disposed inside the CCP chamber opposite of the substrate holder; and
wherein a region of the electrode comprises the EM metasurface, the surface of the electrode comprising the major surface of the EM metasurface, the major surface of the EM metasurface being embedded in a solid dielectric overlayer.

15. A plasma processing system comprising:
a plasma processing chamber;
a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the plasma processing chamber;
a microwave power system coupled to the plasma with microwave power, the microwave power system comprising:
an electromagnetic (EM) metasurface having a major surface configured to couple microwave power to the plasma in the plasma processing chamber;
a microwave source coupled to a microwave oscillator; and

a controller configured to execute instructions to adjust a spatial uniformity metric of EM power supplied to the plasma.

16. The system of claim 15 , further comprising a tuner configured to adjust a frequency of the microwave oscillator, the tuner configured to receive command instructions to adjust the frequency from the controller, and wherein the microwave source comprises a microwave antenna.

17. A method for plasma processing of a semiconductor wafer, the method comprising:
loading the semiconductor wafer in a plasma processing chamber coupled to a radio frequency (RF) source electrode and a microwave power system comprising a microwave oscillator and a microwave source;
igniting plasma by coupling RF power from the RF source electrode to gas in the plasma processing chamber;
coupling microwave power from the microwave power system to the plasma ignited in the plasma processing chamber by coupling the microwave oscillator to the microwave source; and
adjusting the microwave power to control a spatial uniformity metric of a combined electromagnetic (EM) power being supplied to the plasma.

18. The method of claim 17 , wherein coupling the microwave oscillator to the microwave source comprises providing microwave power between 10% and 50% of the combined EM power supplied to the RF source electrode and the microwave source.

19. The method of claim 17 , wherein adjusting the spatial uniformity metric of the EM power comprises:
sending command instructions from a controller to the microwave power system for tuning a frequency of the microwave oscillator, wherein the microwave source comprises a microwave antenna.

20. The method of claim 17 , further comprising:
exciting, with the microwave source, surface EM waves on a major surface of an EM metasurface, the microwave power system further comprising the EM metasurface.

21. The system of claim 1 , wherein the microwave source is configured to excite surface EM waves on a major surface of an EM metasurface.

22. The system of claim 15 , wherein the microwave power system is configured to
excite, with the microwave source, surface EM waves on a major surface of an EM metasurface, the microwave power system further comprising the EM metasurface.

Assignees

• Tokyo Electron Ltd

Inventors

• Kim Yunho
• Shi Yanxiang
• Wang Mingmei

Classifications

• H10P72/0421

  for drying etching · CPC title

• H01J37/32229 Primary

  Waveguides · CPC title

• H01J37/18

  Vacuum locks {; Means for obtaining or maintaining the desired pressure within the vessel} · CPC title

• H01J37/32091 Primary

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J2237/327

  Arrangements for generating the plasma · CPC title