Semiconductor device having semiconductor device elements in a semiconductor layer

Patent metadata

Field	Value
Publication number	US-12107130-B2
Application number	US-202117235989-A
Country	US
Kind code	B2
Filing date	Apr 21, 2021
Priority date	May 9, 2018
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate comprising a first dopant and a second dopant, wherein a covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant;
a semiconductor layer on the semiconductor substrate; and
semiconductor device elements in the semiconductor layer,
wherein a vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface,
wherein the vertical concentration profile N1(y) of the first dopant and a vertical concentration profile N2(y) of the second dopant satisfy:

∫
0
t

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N
⁢
1
⁢

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y
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N
⁢
2
⁢

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y
)

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dy

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t

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1
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⁢
d
⁢
y

<

100
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%

,

where t is a final thickness of the semiconductor substrate.

2. The semiconductor device of claim 1 , wherein an average concentration of the vertical concentration profile of the first dopant between the interface and the surface of the semiconductor substrate opposite to the interface is in a range from 5×10 18 cm −3 to 5×10 20 cm −3 .

3. The semiconductor device of claim 1 , wherein the first dopant is one element selected from the group consisting of arsenic, phosphorus, and antimony, and wherein the second dopant is a different element selected from the group consisting of arsenic, phosphorus and antimony.

4. The semiconductor device of claim 1 , wherein the first dopant is one element selected from the group consisting of boron, aluminum, and gallium, and wherein the second dopant is a different element selected from the group consisting of boron, aluminum, and gallium.

5. The semiconductor device of claim 1 , wherein the vertical concentration profile of the first dopant and a vertical concentration profile of the second dopant are superimposed.

6. The semiconductor device of claim 1 , wherein silicon is the material of the semiconductor substrate, wherein the first dopant is phosphorus, and wherein the second dopant is arsenic.

7. The semiconductor device of claim 1 , wherein silicon is the material of the semiconductor substrate, wherein the first dopant is arsenic, and wherein the second dopant is phosphorus.

8. The semiconductor device of claim 1 , wherein a vertical extension of the first dopant into the semiconductor substrate from a first main surface of the semiconductor substrate ends at a bottom side of a first semiconductor substrate portion at a first vertical distance to the first main surface.

9. The semiconductor device of claim 8 , wherein the first dopant is absent or at least less than 10 14 doping atoms per cm 3 in a second substrate portion that directly adjoins the first semiconductor substrate portion at the bottom side.

10. The semiconductor device of claim 8 , wherein the first vertical distance t1 is in a range from 2 μm to 50 μm.

11. The semiconductor device of claim 10 , wherein the first vertical distance t1 is in a range from 5 μm to 30 μm.

12. The semiconductor device of claim 1 , wherein a material of the semiconductor layer differs from the material of the semiconductor substrate.

13. The semiconductor device of claim 1 , wherein the first dopant causes an increase of a lattice constant with respect to the semiconductor substrate, and wherein the second dopant counteracts the increase.

14. The semiconductor device of claim 1 , wherein the first dopant causes a decrease of a lattice constant with respect to the semiconductor substrate, and wherein the second dopant counteracts the decrease.

15. The semiconductor device of claim 1 , wherein a vertical concentration profile of the second dopant decreases along at least 80% of the distance between the interface to the surface of the semiconductor substrate opposite to the interface.

16. The semiconductor device of claim 1 , wherein the second dopant constitutes a background doping of the semiconductor substrate in a range from 10 18 cm −3 to 10 21 cm −3 .

Assignees

• Infineon Technologies Ag

Inventors

• Muri Ingo
• Baumgartl Johannes Konrad
• Hellmund Oliver
• Ludwig Jacob Tillmann
• Moder Iris
• Neidhart Thomas
• Schmidt Gerhard
• Schulze Hans-Joachim

Classifications

• H10P32/1406

  by ion implantation · CPC title

• H10P32/1204 Primary

  from a plasma phase · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title