Power module

Patent metadata

Field	Value
Publication number	US-12107023-B2
Application number	US-202117473196-A
Country	US
Kind code	B2
Filing date	Sep 13, 2021
Priority date	Feb 17, 2021
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

A power module includes a base plate, a casing, a substrate unit, a terminal plate, a first resin layer, and a second resin layer. The substrate unit includes a substrate fixed on the base plate, a dam part, a semiconductor chip, a metal member, and a wire. The dam part is formed along an edge of the substrate. The wire includes an electrode plate connection portion, and a chip connection portion. The first resin layer is located inward of the dam part. The chip connection portion and the electrode plate connection portion are located inside the first resin layer. The second resin layer is located on the first resin layer. The upper surface of the metal member is located inside the second resin layer. An elastic modulus of the second resin layer is less than that of the first resin layer.

First claim

What is claimed is:

1. A power module, comprising:
a base plate;
a casing located on the base plate;
at least one substrate unit located on the base plate, each of the at least one substrate unit including
a substrate fixed on the base plate, the substrate including a plurality of electrode plates at an upper surface of the substrate, the plurality of electrode plates including at least first and second electrode plates,
a dam part located on the substrate, the dam part being formed along an edge of the substrate when viewed from above,
a first semiconductor chip located on the first electrode plate, the first semiconductor chip including a first electrode,
a metal member located on one of the electrode plates, and
a first wire including
an electrode plate connection portion connected to the second electrode plate,
a chip connection portion connected to the first electrode, and
a curved portion positioned between the electrode plate connection portion and the chip connection portion;

a terminal plate bonded to an upper surface of the metal member, the terminal plate including
a bonding portion connected to the upper surface of the metal member and being parallel to the upper surface of the metal member,
a curved portion being linked to the bonding portion and being curved upward from a direction parallel to the upper surface of the metal member,

an interconnect portion being linked to the curved portion, and
a draw-out portion being linked to the interconnect portion;
a first resin layer located on the substrate inward of the dam part, the chip connection portion and the electrode plate connection portion being located inside the first resin layer; and
a second resin layer located on the first resin layer and the dam part, the upper surface of the metal member being located inside the second resin layer, an elastic modulus of the second resin layer being less than an elastic modulus of the first resin layer, wherein

a height of the dam part from an upper surface of the substrate is greater than a height of the chip connection portion from the upper surface of the substrate,
a height of the first resin layer from the upper surface of the substrate is not more than the height of the dam part, is greater than the height of the chip connection portion, and is less than a height of the upper surface of the metal member from the upper surface of the substrate,
a part of the second resin layer is located between the upper surface of the metal member and the curved portion of the terminal plate,
the terminal plate is monolithically formed, and
the draw-out portion of the terminal plate reaches to an uppermost surface of the casing, is exposed on the uppermost surface of the casing, and is not covered by the second resin layer.

2. The power module according to claim 1 , wherein
the casing includes a side surface portion, and
the second resin layer contacts the base plate in a gap between the substrate unit and the side surface portion.

3. The power module according to claim 1 , wherein
an elastic modulus of the dam part is greater than the elastic modulus of the second resin layer and less than the elastic modulus of the first resin layer.

4. The power module according to claim 1 , wherein
the dam part includes a silicone resin, and
the dam part includes at least two bulges and one pinched-in portion.

5. The power module according to claim 1 , wherein
the curved portion is located inside the second resin layer.

6. The power module according to claim 1 , wherein a thermal expansion coefficient of the first resin layer is less than a thermal expansion coefficient of the second resin layer.

7. The power module according to claim 1 , wherein
the first resin layer includes an epoxy resin.

8. The power module according to claim 1 , wherein the second resin layer is a gel.

9. The power module according to claim 1 , comprising:
two of the substrate units,
one of the substrate units and the other of the substrate units being separated from each other on the base plate, and
the second resin layer contacting the base plate in a gap between the two substrate units.

10. The power module according to claim 9 , further comprising:
a second wire,
the one of the substrate units and the other of the substrate units further including second semiconductor chips located on one of the plurality of electrode plates of the one of the substrate units and the other of the substrate units,
each of the second semiconductor chips including a second electrode,
one end of the second wire being connected to the one of the plurality of electrode plates or the second electrode of the one of the substrate units,
another end of the second wire being connected to the one of the plurality of electrode plates or the second electrode of the other of the substrate units, and
a middle portion of the second wire being located in the second resin layer.

Assignees

• Toshiba Kk

Inventors

• Matsuo Keiichiro
• Komatsu Izuru
• Yamamoto Haruka

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W74/121

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W70/20

  Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) · CPC title