Methods and apparatus for processing a substrate

Patent metadata

Field	Value
Publication number	US-12104243-B2
Application number	US-202117348849-A
Country	US
Kind code	B2
Filing date	Jun 16, 2021
Priority date	Jun 16, 2021
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

First claim

The invention claimed is:

1. A method for processing a substrate, comprising:
depositing a silicide layer within a feature defined in a layer on a substrate;
forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition; and
depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

2. The method of claim 1 , wherein the feature is one of a trench, a via, or a dual damascene structure, and wherein the Mo is deposited atop the one of the metal liner layer or the metal seed layer to one of selectively fill or conformally fill the feature.

3. The method of claim 2 , wherein, prior to performing the at least one of chemical vapor deposition or atomic layer deposition to deposit Mo to one of selectively fill or conformally fill the feature, further comprising depositing a nucleation layer atop the one of the metal liner layer or the metal seed layer.

4. The method of claim 3 , further comprising performing physical vapor deposition to deposit additional Mo atop the Mo deposited atop the one of the metal liner layer or the metal seed layer to one of selectively fill or conformally fill the feature, without vacuum break, wherein the additional Mo is deposited to a thickness of about 2000 A.

5. The method of claim 4 , further comprising performing chemical mechanical polishing on the additional Mo.

6. The method of claim 1 , further comprising, prior to forming the one of the metal liner layer or the metal seed layer, performing a pre-clean process on the substrate, wherein the pre-clean process uses at least one of hydrogen plasma or fluorine plasma, and wherein the one of hydrogen plasma or fluorine plasma is formed using one of a capacitively coupled plasma source, an inductively coupled plasma source, or remote plasma source.

7. The method of claim 1 , wherein the silicide layer comprises at least one of silane (SiH 4 ) and cobalt (Co), SiH 4 and Mo, SiH 4 and ruthenium (Ru), or SiH 4 and W, without vacuum break.

8. The method of claim 7 , further comprising performing physical vapor deposition to deposit a metal cap layer comprising at least one of Co, Mo, Ru, or W within the feature atop the silicide layer, wherein the metal cap layer has a thickness of about 30 A to about 100 A.

9. The method of claim 8 , further comprising performing at least one of atomic layer deposition or chemical vapor deposition to deposit Mo atop the metal cap layer within the feature, without vacuum break.

10. The method of claim 9 , wherein the one of the metal liner layer or the metal seed layer is deposited on the metal cap layer within the feature.

11. The method of claim 1 , wherein depositing Mo using at least one of chemical vapor deposition or atomic layer deposition is performed without first performing oxidation reduction by exposing the at least one of Mo or W to hydrogen.

12. A non-transitory computer readable storage medium having stored thereon instructions that when executed by a processor performs a method for processing a substrate, comprising:
depositing a silicide layer within a feature defined in a layer on a substrate;
forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition; and
depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

13. The non-transitory computer readable storage medium of claim 12 , wherein the feature is one of a trench, a via, or a dual damascene structure, and wherein the Mo is deposited atop the one of the metal liner layer or the metal seed layer to one of selectively fill or conformally fill the feature.

14. The non-transitory computer readable storage medium of claim 13 , wherein, prior to performing the at least one of chemical vapor deposition or atomic layer deposition to deposit Mo to one of selectively fill or conformally fill the feature, further comprising depositing a nucleation layer atop the one of the metal liner layer or the metal seed layer.

15. The non-transitory computer readable storage medium of claim 14 , further comprising performing physical vapor deposition to deposit additional Mo atop the Mo deposited atop the one of the metal liner layer or the metal seed layer to one of selectively fill or conformally fill the feature, without vacuum break, wherein the additional Mo is deposited to a thickness of about 2000 A.

16. The non-transitory computer readable storage medium of claim 15 , further comprising performing chemical mechanical polishing on the additional Mo.

17. The non-transitory computer readable storage medium of claim 12 , further comprising, prior to forming the one of the metal liner layer or the metal seed layer, performing a pre-clean process on the substrate, wherein the pre-clean process uses at least one of hydrogen plasma or fluorine plasma, and wherein the one of hydrogen plasma or fluorine plasma is formed using one of a capacitively coupled plasma source, an inductively coupled plasma source, or remote plasma source.

18. The non-transitory computer readable storage medium of claim 12 , wherein the silicide layer comprises at least one of silane (SiH 4 ) and cobalt (Co), SiH 4 and Mo, SiH 4 and ruthenium (Ru), or SiH 4 and W, without vacuum break.

19. The non-transitory computer readable storage medium of claim 18 , further comprising performing physical vapor deposition to deposit a metal cap layer comprising at least one of Co, Mo, Ru, or W within the feature atop the silicide layer, wherein the metal cap layer has a thickness of about 30 A to about 100 A.

20. A method for processing a substrate, comprising:
performing a pre-clean process on a substrate comprising a layer having a feature defined therein;
forming one of a metal liner layer or a metal seed layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition;
depositing a nucleation layer atop the one of the metal liner layer or the metal seed layer, without vacuum break; and
depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the one of the metal liner layer or the metal seed layer to one of selectively fill or conformally fill the feature, without vacuum break.

Assignees

• Applied Materials Inc

Inventors

• Lakshmanan Annamalai
• Wrench Jacqueline S
• Wang Feihu
• Yang Yixiong
• Lee Joung Joo
• Gandikota Srinivas
• Kim Sang-Heum
• Chen Zhebo
• Shen Gang

Classifications

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• C23C16/42

  Silicides · CPC title

• C23C14/025

  Metallic sublayers · CPC title

• C23C14/021

  Cleaning or etching treatments · CPC title