Halogen-Containing Silane-Based Metal Silicide As Nucleation Layer For Tungsten ALD

Patent metadata

Field	Value
Publication number	US-2017350013-A1
Application number	US-201715615790-A
Country	US
Kind code	A1
Filing date	Jun 6, 2017
Priority date	Jun 6, 2016
Publication date	Dec 7, 2017
Grant date	—

Abstract

Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

First claim

What is claimed is:

1 . A processing method comprising:
positioning a substrate with a surface in a processing chamber; and sequentially exposing the substrate surface to a first reactive gas and a second reactive gas to form a nucleation layer on the surface, the first reactive gas comprising a metal precursor and the second reactive gas comprising a halogenated silane.

2 . The method of claim 1 , wherein the metal precursor comprises one or more of WCl 5 , WCl 6 , WF 6 , MoCl 5 , MoCl 6 or MoF 6 .

3 . The method of claim 1 , wherein the halogenated silane comprises a compound having the general formula Si a H b X c , where X is a halogen, a is 1-5, c is at least one and the sum of b and c equals 2a+2.

4 . The method of claim 3 , wherein the halogenated silane has each X independently selected from the group consisting of Cl and F, a is in the range of about 1 to about 2, and c is greater than 1.

5 . The method of claim 1 , wherein the metal precursor comprises tungsten and the nucleation layer comprises tungsten silicide.

6 . The method of claim 1 , wherein the metal precursor comprises molybdenum and the nucleation layer comprises molybdenum silicide.

7 . The method of claim 1 , wherein the second reactive gas further comprises a silane or an inert gas.

8 . The method of claim 1 , wherein the nucleation layer has a growth rate in the range of about 0.1 to about 10 Å/cycle.

9 . The method of claim 1 , wherein the halogenated silane comprises substantially no Br or I atoms.

10 . The method of claim 1 , further comprising repeating the sequential exposure to the first reactive gas and the second reactive gas to grow a nucleation layer of a target thickness.

11 . The method of claim 10 , further comprising performing a bulk metal deposition on the nucleation layer.

12 . The method of claim 11 , wherein the bulk metal deposition comprises sequential exposure to a third reactive gas and a fourth reactive gas, the third reactive gas comprising one or more of WF 6 or MoF 6 and the fourth reactive gas comprising H 2 .

13 . The method of claim 12 , wherein the fourth reactive gas is a plasma.

14 . The method of claim 1 , wherein the nucleation layer is formed at a temperature in the range of about 350° C. to about 550° C.

15 . A processing method comprising:
positioning a substrate with a surface in a processing chamber; forming a nucleation layer on the surface by repeating sequential exposure of the substrate surface to a first reactive gas and a second reactive gas, the first reactive gas comprising a metal precursor and the second reactive gas comprising a halogenated silane to form a nucleation layer of a predetermined thickness; and bulk depositing a metal film on the nucleation layer by repeating sequential exposure of the nucleation layer to a third reactive gas and a fourth reactive gas to form a bulk metal film of a predetermined thickness.

16 . The method of claim 15 , wherein the metal precursor comprises one or more of WCl 5 , WCl 6 , WF 6 , MoCl 5 , MoCl 6 or MoF 6 .

17 . The method of claim 15 , wherein the halogenated silane comprises a compound having the general formula Si a H b X c , where X is a halogen, a is 1-5, c is at least one and the sum of b and c equals 2a+2.

18 . The method of claim 15 , wherein the nucleation layer has a growth rate in the range of about 0.1 to about 10 Å/cycle.

19 . The method of claim 15 , wherein the third reactive gas comprises one or more of WF 6 or MoF 6 and the fourth reactive gas comprises H 2 .

20 . A processing method comprising:
placing a substrate having a surface into a processing chamber comprising a plurality of process regions, each process region separated from adjacent process regions by a gas curtain; exposing at least a portion of the substrate surface to a first process condition in a first process region of the processing chamber, the first process condition comprising a metal precursor comprising one or more of WCl 5 , WCl 6 , WF 6 , MoCl 5 , MoCl 6 or MoF 6 ; laterally moving the substrate surface through a gas curtain to a second process region of the processing chamber; exposing the substrate surface to a second process condition in the second process region of the processing chamber, the second process condition comprises a halogenated silane comprising a compound having the general formula Si a H b X c , where X is a halogen, a is 1-5, c is at least one and the sum of b and c equals 2a+2; repeating exposure to the first process condition and the second process condition to form a nucleation layer comprising one or more of tungsten silicide or molybdenum silicide with a predetermined thickness in the range of about 5 Å to about 100 Å at a growth rate in the range of about 0.1 Å/cycle to about 10 Å/cycle; moving the substrate surface to a third process region of the processing chamber, the third process region comprising a third process condition comprising one or more of WF 6 or MoF 6 ; moving the substrate to a fourth process region of the processing chamber, the fourth process region comprising a fourth process condition comprising H 2 ; repeating exposure to the third process condition and the fourth process condition to form a metal film on the nucleation layer.

Assignees

• Applied Materials Inc

Inventors

• Chan Kelvin
• Chen Yihong

Classifications

• C23C16/24

  Deposition of silicon only · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/08

  from metal halides · CPC title

• C23C16/45527 Primary

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/42

  Silicides · CPC title