Method of patterning a substrate using a sidewall spacer etch mask

Patent metadata

Field	Value
Publication number	US-12099299-B2
Application number	US-202318354388-A
Country	US
Kind code	B2
Filing date	Jul 18, 2023
Priority date	Sep 25, 2019
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A method for patterning a substrate in which a patterned photoresist structure can be formed on the substrate, the patterned photoresist structure having a sidewall. A conformal layer of spacer material can be deposited on the sidewall. The patterned photoresist structure can then be removed from the substrate, leaving behind the spacer material. Then, the substrate can be directionally etched using the sidewall spacer as an etch mask to form the substrate having a target critical dimension.

First claim

The invention claimed is:

1. A method of patterning a substrate, the method comprising:
depositing an anti-reflective coating layer on a substrate, the anti-reflective coating layer including a solubility-shifting component;
depositing a layer of photoresist on the anti-reflective coating layer;
exposing the layer of photoresist to a pattern of actinic radiation using a mask-based photolithography system, wherein a focus point of the pattern of actinic radiation is set at predetermined point that creates a latent pattern of structures having a sidewall taper in that the upper portions of the structures have wider cross-sections as compared to cross-sections of corresponding intermediate portions;
diffusing the solubility-shifting component into a lower portion of the layer of photoresist; and
developing the layer of photoresist resulting in photoresist structures having the sidewall taper in that a cross-sectional width of the photoresist structures decreases from a top of the photoresist structures to a bottom of the photoresist structures.

2. The method of claim 1 , wherein the layer of photoresist contains a first photo acid generator that generates a first photo acid in response to a first wavelength of light, and wherein the solubility-shifting component is a second photo acid that is a component of a second photo acid generator that generates the second photo acid in response to a second wavelength of light.

3. The method of claim 2 , wherein the first wavelength of light is different from the second wavelength of light.

4. The method of claim 3 , further comprising executing a flood exposure on the substrate of the second wavelength of light subsequent to exposing the layer of photoresist to the pattern of actinic radiation using the mask-based photolithography system.

5. The method of claim 1 , wherein the solubility-shifting component is acid deposited on the anti-reflective coating layer.

6. The method of claim 1 , wherein the solubility-shifting component is free acid within the anti-reflective coating layer.

7. The method of claim 1 , further comprising:
forming sidewall spacers on the photoresist structures, the sidewall spacers adopting the sidewall taper of the photoresist structures; and
removing the photoresist structures.

8. The method of claim 7 , wherein removing the photoresist structures results in top portions of sidewall spacers from a given photoresist structure decreasing in geometrical distance from each other as the given photoresist structure is removed.

9. The method of claim 1 , wherein the anti-reflective coating layer is partially-reflective and sufficient to reflect a portion of the pattern of actinic radiation back into the layer of photoresist to generate more photo acid at bottom portions of the layer of photoresist.

10. The method of claim 1 , wherein a concentration of the solubility-shifting component in the anti-reflective coating layer is selected so that a sum of photo acid generated from the layer of photoresist and photo acid generated from the anti-reflective coating layer is sufficient to result in the photoresist structures having the sidewall taper.

Assignees

• Tokyo Electron Ltd

Inventors

• Grzeskowiak Jodi
• Schepis Anthony
• Devilliers Anton

Classifications

• H10P76/2043 Primary

  using an anti-reflective coating · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/242

  of Group IV materials · CPC title