Terahertz device

Patent metadata

Field	Value
Publication number	US-12099005-B2
Application number	US-202017597061-A
Country	US
Kind code	B2
Filing date	Jun 30, 2020
Priority date	Jul 5, 2019
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A terahertz device includes a base member, a terahertz element, an antenna base, and a reflection film. The terahertz element is mounted on the base member and configured to generate an electromagnetic wave. The antenna base is located opposing the base member and includes an antenna surface. The reflection film is formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.

First claim

The invention claimed is:

1. A terahertz device, comprising:
a base member;
a terahertz element mounted on the base member and configured to generate an electromagnetic wave;
an antenna base located opposing the base member and including an antenna surface; and
a reflection film formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.

2. The terahertz device according to claim 1 , wherein
the antenna base includes
a base main surface faced to the base member,
a base back surface opposite the base main surface, and
a base side surface facing sideward,

the terahertz device further comprises an electrode used for electrical connection with an external device, and
the electrode includes
a side electrode formed on the base side surface, and
a back electrode formed on the base back surface.

3. The terahertz device according to claim 2 , wherein the electrode includes a lead frame bent along the antenna base.

4. The terahertz device according to claim 3 , wherein
the electrode includes
a proximal portion that is bent at a corner between the base side surface and the base main surface toward the base side surface,
a bent portion that is bent at a corner between the base side surface and the base back surface, and
a distal portion disposed on the base back surface,

the side electrode is a portion of the electrode from the proximal portion to the bent portion, and
the back electrode is a portion of the electrode from the bent portion to the distal portion.

5. The terahertz device according to claim 1 , wherein
the terahertz element includes
an element main surface including an oscillation point on which an electromagnetic wave is generated, and
an element back surface opposite the element main surface, and

the reflection film is disposed closer to the element main surface than to the element back surface.

6. The terahertz device according to claim 5 , wherein
the terahertz element is configured to radiate an electromagnetic wave from the oscillation point in a range of an opening angle, and
the reflection film is formed over an angle that is greater than or equal to the opening angle of the oscillation point.

7. The terahertz device according to claim 5 , wherein the reflection film is parabolic-antenna-shaped.

8. The terahertz device according to claim 7 , wherein the reflection film is disposed so that a focal point of the reflection film is located on the oscillation point.

9. The terahertz device according to claim 7 , wherein a center point of the reflection film coincides with the oscillation point as viewed in an opposing direction of the base member and the antenna base.

10. The terahertz device according to claim 7 , wherein the reflection film is disposed at a position corresponding to a frequency of an electromagnetic wave generated by the terahertz element so that the electromagnetic wave resonates.

11. The terahertz device according to claim 7 , wherein the terahertz element is disposed at a position so that a center point of the reflection film and the oscillation point are located at different positions as viewed in an opposing direction of the base member and the antenna base.

12. The terahertz device according to claim 1 , wherein the reflection film is electrically isolated.

13. The terahertz device according to claim 1 , wherein the antenna base is formed of an insulative material.

14. The terahertz device according to claim 1 , wherein the base member is located opposing the reflection film and is formed of a material transmissive to an electromagnetic wave.

15. The terahertz device according to claim 14 , wherein the base member is formed of a dielectric.

16. The terahertz device according to claim 1 , wherein
the base member includes a mount main surface on which the terahertz element is mounted,
the antenna base includes
a base main surface faced to the mount main surface, and
a recess recessed from the base main surface and including the antenna surface, and

the terahertz element and the reflection film are disposed in an accommodation space defined by the mount main surface and the antenna surface.

17. The terahertz device according to claim 16 , wherein the reflection film is formed on the antenna surface and is not formed on the base main surface.

18. The terahertz device according to claim 16 , wherein
the antenna base includes a receptacle disposed separately from the recess to accommodate a protection diode, and
the protection diode is connected in parallel to the terahertz element.

19. The terahertz device according to claim 16 , further comprising:
a conductive member disposed on the mount main surface and connected to the terahertz element; and
an adhesive layer disposed between the antenna base and the conductive member to adhere the antenna base to the conductive member,
wherein the adhesive layer is formed of an insulative material and is disposed between the reflection film and the conductive member.

20. The terahertz device according to claim 19 , further comprising an insulative spacer disposed between the reflection film and the conductive member, wherein the spacer is different from the adhesive layer.

Assignees

• Rohm Co Ltd

Inventors

• Toyama Tomoichiro
• Tsuruda Kazuisao

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D8/70

  Tunnel-effect diodes · CPC title

• H10D8/40

  Transit-time diodes, e.g. IMPATT or TRAPATT diodes · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H03B2200/0084

  dedicated to Terahertz frequencies · CPC title