Terahertz device

US11335653B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11335653-B2
Application numberUS-202016999029-A
CountryUS
Kind codeB2
Filing dateAug 20, 2020
Priority dateSep 2, 2019
Publication dateMay 17, 2022
Grant dateMay 17, 2022

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The task of the present invention is to achieve gain enhancement.A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) includes a portion opposing the terahertz element (20) through the dielectric (50) and the gas space (92) and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element (20) and transmitted through the dielectric (50) and the gas space (92). In addition, the refractive index of the dielectric (50) is lower than the refractive index of the terahertz element (20) and is higher than the refractive index of the gas in the gas space (92).

First claim

Opening claim text (preview).

What is claimed is: 1. A terahertz device, comprising: a terahertz element, generating an electromagnetic wave; a dielectric, comprising a dielectric material and surrounding the terahertz element; a gas space, comprising a gas; and a reflecting portion, comprising a portion opposing the terahertz element through the dielectric and the gas space and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element and transmitted through the dielectric and the gas space; wherein, an element refractive index, which is a refractive index of the terahertz element, is higher than a gas refractive index, which is a refractive index of the gas, and a dielectric refractive index, which is a refractive index of the dielectric, is lower than the element refractive index and higher than the gas refractive index. 2. The terahertz device according to claim 1 , wherein the terahertz element comprises an element substrate, and the element refractive index is a refractive index of the element substrate. 3. The terahertz device according to claim 2 , wherein the element substrate comprises InP. 4. The terahertz device according to claim 1 , wherein the gas is air. 5. The terahertz device according to claim 1 , wherein the dielectric comprises epoxy resin. 6. The terahertz device according to claim 1 , comprising: an antenna base, comprising an antenna surface opposing the terahertz element through the dielectric and the gas space; wherein the reflecting portion is a reflecting film formed on the antenna surface. 7. The terahertz device according to claim 6 , wherein the antenna base comprises an insulative material. 8. The terahertz device according to claim 6 , wherein the terahertz element comprises an element main surface and an element back surface serving as surfaces crossing a thickness direction of the terahertz element; the element main surface comprises an oscillation point; the element back surface is a surface on a side opposite to the element main surface; and the dielectric comprises: a dielectric main surface opposing the reflecting film in the thickness direction of the terahertz element, and a dielectric back surface, being a surface on a side opposite to the dielectric main surface. 9. The terahertz device according to claim 8 , wherein the reflecting film is formed as being larger than the terahertz element when observed in the thickness direction of the terahertz element. 10. The terahertz device according to claim 8 , wherein the gas space is defined by the dielectric main surface and the antenna surface. 11. The terahertz device according to claim 10 , wherein the antenna base comprises: a base main surface, opposing the dielectric main surface, and an antenna recess, recessed from the base main surface; and the antenna surface is an inner surface of the antenna recess, and curves in a manner of recessing toward a direction away from the terahertz element. 12. The terahertz device according to claim 11 , wherein the reflecting film is formed on the antenna surface but is free from the base main surface. 13. The terahertz device according to claim 11 , wherein the antenna recess comprises a diameter expansion surface with an expanded diameter compared to the antenna surface, and a step surface formed between the antenna surface and the diameter expansion surface; and the reflecting film is formed throughout the antenna surface and the step surface. 14. The terahertz device according to claim 11 , comprising: a fixing portion, fixing the dielectric with the antenna base. 15. The terahertz device according to claim 14 , wherein the fixing portion comprises an adhesive layer disposed between the base main surface and the dielectric main surface and bonding the dielectric and the antenna base, and the gas space is sealed by the adhesive layer. 16. The terahertz device according to claim 8 , wherein the terahertz element is surrounded by the dielectric in a state where the element main surface faces the reflecting film. 17. The terahertz device according to claim 16 , wherein the terahertz element irradiates the electromagnetic wave radially from the oscillation point throughout a range of an opening angle, and the reflecting film is formed throughout an angle greater than the opening angle with respect to the oscillation point. 18. The terahertz device according to claim 16 , wherein the reflecting film is shaped as a parabolic antenna. 19. The terahertz device according to claim 18 , wherein the reflecting film is configured by locating a focus of the reflecting film at the oscillation point. 20. The terahertz device according to claim 18 , wherein a center point of the reflecting film coincides with the oscillation point when observed in the thickness direction of the terahertz element.

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What does patent US11335653B2 cover?
The task of the present invention is to achieve gain enhancement.A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) …
Who is the assignee on this patent?
Rohm Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10W44/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 17 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).