Atomic layer etching processes

Patent metadata

Field	Value
Publication number	US-12094686-B2
Application number	US-202318188255-A
Country	US
Kind code	B2
Filing date	Mar 22, 2023
Priority date	Dec 22, 2016
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

First claim

What is claimed is:

1. A method of etching a film comprising metal on a substrate in a reaction chamber by chemical atomic layer etching, the method comprising a plurality of etching cycles comprising:
exposing the substrate to a first vapor-phase oxygen compound; and
subsequently exposing the substrate to a second vapor-phase organic reactant,
wherein the substrate is not contacted with a plasma reactant during the etching cycles.

2. The method of claim 1 , wherein the first vapor-phase oxygen compound comprises one or more of H 2 O, NO, SO 3 , O 2 and O 3 .

3. The method of claim 1 , wherein the first vapor-phase oxygen compound comprises O 3 .

4. The method of claim 1 , wherein the second vapor-phase organic reactant comprises one or more of trimethylaluminum (TMA), Hacac, Sn(acac) 2 , and Hhfac.

5. The method of claim 1 , wherein the second vapor-phase organic reactant comprises Hacac.

6. The method of claim 1 , wherein the film is an elemental metal film.

7. The method of claim 1 , wherein the metal comprises W, Pt, Cu, Ni, Co, Ti, Zn, Nb, Mo or Ta.

8. The method of claim 1 , wherein the film comprises Cu.

9. The method of claim 1 , wherein the etching cycles are carried out at a temperature of about 100° C. to 500° C.

10. The method of claim 1 , wherein the etching cycles are carried out at a temperature of about 200° ° C. to 500° ° C.

11. The method of claim 1 , further comprising removing excess first vapor-phase oxygen compound.

12. The method of claim 1 , further comprising removing excess second vapor-phase organic reactant.

13. The method of claim 1 , wherein up to a monolayer of material is removed from the film in each etching cycle.

14. A method of etching a copper film on a substrate in a reaction chamber by chemical atomic layer etching, the method comprising a plurality of etching cycles, each etching cycle comprising alternately and sequentially exposing the substrate to a vapor-phase oxygen compound and a vapor-phase organic ligand exchanger, wherein the substrate is not contacted with a plasma reactant during the etching cycles, and wherein up to a monolayer of material is removed from the copper film in each etching cycle.

15. The method of claim 14 , wherein the vapor-phase oxygen compound comprises O 3 .

16. The method of claim 14 , wherein the vapor-phase organic ligand exchanger comprises Hacac.

17. The method of claim 14 , wherein the etching cycles are carried out at a temperature of about 200° ° C. to 500° C.

18. A method of etching a copper film on a substrate in a reaction chamber by chemical atomic layer etching, the method comprising a plurality of etching cycles, each etching cycle comprising alternately and sequentially exposing the substrate to O 3 and Hacac at a temperature of about 200° ° C. to 500° C., wherein up to a monolayer of material is removed from the copper film in each etching cycle.

19. The method of claim 18 , wherein the copper film is an elemental copper film.

20. The method of claim 18 , wherein the substrate is not contacted with a plasma reactant during the etching cycles.

Assignees

• Asm Ip Holding Bv

Inventors

• Blomberg Tom E
• Sharma Varun
• Haukka Suvi P
• Tuominen Marko
• Zhu chiyu

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/266

  by vapour etching only · CPC title

• C23G5/00

  Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents · CPC title

• C23F1/12

  Gaseous compositions · CPC title

• H01J37/32009 Primary

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title