Semiconductor manufacturing apparatus

Patent metadata

Field	Value
Publication number	US-2016208382-A1
Application number	US-201514812068-A
Country	US
Kind code	A1
Filing date	Jul 29, 2015
Priority date	Jan 21, 2015
Publication date	Jul 21, 2016
Grant date	—

Abstract

A semiconductor manufacturing apparatus according to an embodiment includes a reaction chamber that is capable of housing a semiconductor substrate and is capable of forming a deposited film on a surface of the semiconductor substrate. A first container stores a source of the deposited film. A second container stores a source gas generated in the first container, and supplies the source gas to the reaction chamber. A first pipe connects the first container and the second container. A second pipe supplies an inert gas to the second container.

First claim

1 . A semiconductor manufacturing apparatus comprising:
a reaction chamber being capable of housing a semiconductor substrate and being capable of forming a deposited film on a surface of the semiconductor substrate; a first container storing a source of the deposited film; a second container storing a source gas generated in the first container and supplying the source gas to the reaction chamber; a first pipe connecting the first container and the second container; and a second pipe supplying an inert gas to the second container.

2 . The apparatus of claim 1 , wherein a capacity of the second container is smaller than that of the first container.

3 . The apparatus of claim 1 , further comprising a third pipe connecting the first container and a discharging device.

4 . The apparatus of claim 2 , further comprising a third pipe connecting the first container and a discharging device.

5 . The apparatus of claim 3 , wherein the first to third pipes are individually provided.

6 . The apparatus of claim 4 , wherein the first to third pipes are individually provided.

7 . The apparatus of claim 1 , further comprising:
a first valve on the first pipe, the valve opening or closing a supply route of the source gas; and a second valve on the second pipe, the valve opening or closing a supply route of the inert gas, wherein the first valve opens the supply route of the source gas of the first pipe with a supply route of the inert gas from the second container to the reaction chamber being kept closed when the source gas in the first container is to be stored in the second container, and the first valve closes the supply route of the source gas of the first pipe and the second valve closes the supply route of the inert gas of the second pipe when the source gas is to be supplied from the second container to the reaction chamber.

8 . The apparatus of claim 7 , wherein the second valve opens the supply route of the inert gas in order to pressurize the source gas stored in the second container before the source gas is supplied from the second container to the reaction chamber.

9 . The apparatus of claim 3 , further comprising a third valve opening or closing a gas discharging route of the third pipe, wherein
the third valve opens the gas discharging route of the third pipe before the source gas is stored from the first container to the second container.

10 . The apparatus of claim 1 , further comprising:
a third container storing a source gas generated in the first container and supplying the source gas to the reaction chamber; a fourth pipe connecting the first container and the third container; and a fifth pipe supplying an inert gas to the third container.

11 . The apparatus of claim 10 , wherein a capacity of the third container is substantially equal to that of the second container.

12 . The apparatus of claim 10 , wherein the fourth pipe and the fifth pipe are individually provided.

13 . The apparatus of claim 11 , wherein the fourth pipe and the fifth pipe are individually provided.

14 . The apparatus of claim 10 , further comprising:
a fourth valve on the fourth pipe, the valve opening or closing a supply route of the source gas; and a fifth valve on the fifth pipe, the valve opening or closing a supply route of the inert gas, wherein the fourth valve opens the supply route of the source gas of the fourth pipe with a gas supply route from the third container to the reaction chamber being kept closed when the source gas in the first container is to be stored in the third container, and the fourth valve closes the supply route of the source gas of the fourth pipe and the fifth valve closes the supply route of the inert gas of the fifth pipe when the source gas is to be supplied from the third container to the reaction chamber.

15 . The apparatus of claim 14 , wherein the fifth valve opens the supply route of the inert gas in order to pressurize the source gas stored in the third container before the source gas is supplied from the third container to the reaction chamber.

16 . The apparatus of claim 10 , wherein
the third container stores the source gas while the source gas is supplied from the second container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas, and the second container stores the source gas while the source gas is supplied from the third container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas.

17 . The apparatus of claim 11 , wherein
the third container stores the source gas while the source gas is supplied from the second container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas, and the second container stores the source gas while the source gas is supplied from the third container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas.

18 . The apparatus of claim 12 , wherein
the third container stores the source gas while the source gas is supplied from the second container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas, and the second container stores the source gas while the source gas is supplied from the third container to the reaction chamber and the deposited film is formed in the reaction chamber with the source gas.

19 . The apparatus of claim 1 , further comprising a filter in the first pipe.

20 . The apparatus of claim 10 , further comprising a filter in the fourth pipe.

Assignees

• Toshiba Kk

Inventors

• Takahashi Kensei
• Matsuo Kazuhiro
• Aiso Fumiki

Classifications

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• C23C16/4481

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title