Composition for dissolving abrasive particles and cleaning method using the same

Patent metadata

Field	Value
Publication number	US-12091636-B2
Application number	US-202117516668-A
Country	US
Kind code	B2
Filing date	Nov 1, 2021
Priority date	Nov 6, 2020
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

A composition for dissolving abrasive particles, and a cleaning method using the composition are provided. The composition includes a sulfur-containing organic acid, a fluorine ion-containing compound, and a solvent, and a turbidity change rate (%) measured at 60° C. for 15 minutes may be in a range of −80 to −99.

First claim

What is claimed is:

1. A composition for dissolving abrasive particles, the composition comprising:
a sulfur-containing organic acid;
a fluorine ion-containing compound;
a solvent; and
a sulfur-containing compound,
wherein a turbidity change rate (%) measured at 60° C. for 15 minutes is in a range of −80 to −99,
wherein the sulfur-containing organic acid comprises at least one selected from a group consisting of sulfenic acid (RSOH), sulfinic acid (RSO(OH)), organic sulfonic acid (RS(═O) 2 —OH), thiosulfonic acid (RSO 2 SH), and thiocarboxylic acid (RC(S)OH), and
wherein the sulfur-containing compound comprises at least one selected from a group consisting of thiosulfuric acid (H 2 S 2 O 3 ), sulfuric acid, sulfide, bisulfide (R—S—S—R′), hydrogen sulfide (H 2 S), sulfur trioxide (SO 3 ), sulfamic acid, mercaptan (R—SH), and sulfonate, and
wherein the sulfur-containing compound is included in an amount of 5 wt % to 15 wt % in the composition, and
wherein a mass ratio of the sulfur-containing compound:the sulfur-containing organic acid is in a range of 2:1 to 5:1, and
wherein the composition is used to dissolve abrasive particles remaining after polishing using a chemical mechanical polishing (CMP) slurry containing abrasive particles.

2. The composition of claim 1 , wherein the sulfur-containing organic acid is included in an amount of 1% by weight (wt %) to 10 wt % in the composition.

3. The composition of claim 1 , wherein the organic sulfonic acid comprises at least one selected from a group consisting of alkanesulfonic acid, alkanolsulfonic acid, sulfosuccinic acid, and aromatic sulfonic acid.

4. The composition of claim 1 , wherein the fluorine ion-containing compound is included in an amount of 2 wt % to 10 wt % in the composition.

5. The composition of claim 1 , wherein the fluorine ion-containing compound is an ionic fluoride compound.

6. The composition of claim 1 , wherein the fluorine ion-containing compound comprises at least one selected from a group consisting of ammonium fluoride, ammonium bifluoride, ammonium tetrafluoroborate, ammonium silicofluoride, aminobenzotrifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrabutylammonium difluorotriphenylsilicate, tetrabutylammonium fluoride, and benzyltrimethylammonium fluoride.

7. The composition of claim 1 , wherein the sulfonate comprises at least one selected from a group consisting of alkyl sulfonate, aryl sulfonate, alkyl aryl sulfonate, alkyl ether sulfonate, polystyrene sulfonate, alkanesulfonate, α-olefin sulfonate, dodecylbenzenesulfonate, and alkylbenzene sulfonate.

8. The composition of claim 1 , wherein the composition is used to clean a wafer for a semiconductor device comprising at least one film selected from a group consisting of a silicon nitride film, a silicon oxide film, a polysilicon film, and a silicon film, after polishing of the wafer.

9. The composition of claim 1 , wherein the abrasive particles comprise ceria.

10. A cleaning method comprising:
cleaning a wafer for a semiconductor device using the composition of claim 1 , after chemical mechanical polishing (CMP) of the wafer.

11. The cleaning method of claim 10 , wherein the wafer comprises at least one film selected from a group consisting of a silicon nitride film, a silicon oxide film, a polysilicon film, and a silicon film.

Assignees

• Kctech Co Ltd

Inventors

• Jung Kyong Jin
• Jung Ga Young
• Yun Young Ho
• Park Kun Hee
• Kim Young Gon
• Jeong Yong Ho

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/237 Primary

  the processing being a planarisation of insulating layers · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title