Manufacturing method of semiconductor device, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9428342-B2
Application number	US-201514816847-A
Country	US
Kind code	B2
Filing date	Aug 3, 2015
Priority date	May 10, 2013
Publication date	Aug 30, 2016
Grant date	Aug 30, 2016

Abstract

Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device by using a semiconductor manufacturing apparatus, comprising steps of:
(a) forming a first wiring over a semiconductor substrate;
(b) forming an insulating film over the first wiring;
(c) forming, in the insulating film, a hole connected to the first wiring and a trench connected to the hole;
(d) forming a conductive film over the insulating film in order to fill in the hole and the trench;
(e) polish…

Assignees

• Renesas Electronics Corp

Inventors

• Nosaka Takayuki

Classifications

• H10P74/20

  Electricity · mapped topic

• H10P72/3314

  Electricity · mapped topic

• H10P72/0606

  Electricity · mapped topic

• H10P72/0456

  Electricity · mapped topic

• H10P72/0444

  Electricity · mapped topic