Insulation jacket for top coil of an isolated transformer

Patent metadata

Field	Value
Publication number	US-12080460-B2
Application number	US-202217890163-A
Country	US
Kind code	B2
Filing date	Aug 17, 2022
Priority date	Aug 28, 2019
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

First claim

What is claimed is:

1. A micro-isolator with enhanced isolation breakdown voltage, comprising:
a substrate;
a first isolator element distal from a surface of the substrate;
a second isolator element proximate the substrate and disposed on the surface of the substrate;
a first dielectric material, comprising a polymer, disposed between the first and second isolator elements;
a second dielectric material encapsulating the first isolator element; and
a contact area disposed in the substrate and electrically coupled to the second isolator element.

2. The micro-isolator of claim 1 , wherein the second dielectric material encapsulates the second isolator element.

3. The micro-isolator of claim 1 , wherein the first dielectric material comprises polyimide and the second dielectric material comprises a material with a bandgap wider than a bandgap of the first dielectric material.

4. The micro-isolator of claim 1 , wherein the first isolator element and the second isolator element are at least one of coils or capacitive plates.

5. The micro-isolator of claim 1 , further comprising an adhesion layer disposed between the first isolator element and the second dielectric material.

6. The micro-isolator of claim 1 , wherein the first dielectric material has a thickness between 1 and 100 microns.

7. The micro-isolator of claim 1 , wherein the second dielectric material has a thickness between 0.1 and 5 microns.

8. A micro-isolator with enhanced breakdown voltage, comprising:
a substrate;
a first isolator element distal from the substrate;
a second isolator element proximate the substrate;
a first dielectric material, comprising a polymer, disposed between the first and second isolator elements; and
a structure encapsulating the first isolator element, the structure comprising:
a first layer of a second dielectric material, the first layer disposed on a surface of the first dielectric material;
a first adhesion layer disposed between the first layer and the first isolator element, the first adhesion layer being patterned to expose portions of the first layer not covered by the first isolator element;
a second adhesion layer covering the first isolator element and the exposed portions of the first layer; and
a second layer covering the second adhesion layer, the second layer comprising the second dielectric material or a third dielectric material different from the second dielectric material.

9. The micro-isolator of claim 8 , wherein the first dielectric material comprises polyimide and the second and third dielectric materials comprise materials with a bandgap wider than a bandgap of the first dielectric material.

10. The micro-isolator of claim 9 , wherein the second dielectric material and the third dielectric material each comprise one of Si 3 N 4 , SiO 2 , and/or Al 2 O 3 .

11. The micro-isolator of claim 8 , wherein the first adhesion layer comprises a metal and the second adhesion layer comprises a fourth dielectric material.

12. The micro-isolator of claim 11 , wherein the metal comprises any one of a selection of Ti, W, Ta, Cr, Al, Cu, and/or TiW.

13. The micro-isolator of claim 11 , wherein the fourth dielectric material comprises any one of a selection of Al 2 O 3 , SiO 2 , and/or TiO 2 .

14. The micro-isolator of claim 8 , wherein the first layer of the second dielectric material is thicker than the second layer of the second dielectric material.

15. A micro-isolator with enhanced breakdown voltage, comprising:
a substrate;
a first isolator element distal from the substrate;
a second isolator element proximate the substrate;
a first dielectric material, comprising a polymer, disposed between the first and second isolator elements; and
a structure encapsulating the first isolator element, the structure comprising:
a first layer of a second dielectric material, the first layer disposed on a surface of the first dielectric material;
an adhesion layer disposed between portions of the first layer and the first isolator element;
nanoparticles disposed over portions of the first layer not covered by the adhesion layer; and
a second layer encapsulating the first isolator element and the nanoparticles, the second layer comprising the second dielectric material or a third dielectric material different from the second dielectric material.

16. The micro-isolator of claim 15 , wherein the first dielectric material comprises polyimide and the second and third dielectric materials comprise materials with a bandgap wider than a bandgap of the first dielectric material.

17. The micro-isolator of claim 15 , wherein the adhesion layer comprises a metal.

18. The micro-isolator of claim 17 , wherein the metal comprises any one of a selection of Ti, W, Ta, Cr, Al, Cu, and/or TiW.

19. The micro-isolator of claim 15 , wherein the nanoparticles comprise a metal.

20. The micro-isolator of claim 15 , wherein the nanoparticles have a diameter between 0.1 nm and 100 nm.

Assignees

• Analog Devices Global Unlimited Co

Inventors

• Lambkin Paul
• Murphy Patrick J
• Stenson Bernard Patrick
• O'Sullivan Laurence B
• O'Brien Stephen
• Geary Shane
• Chen Baoxing
• Diaham Sombel

Classifications

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10W44/601

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title

• H10W44/00

  Electrical arrangements for controlling or matching impedance · CPC title