Nanorod production method and nanorod produced thereby

Patent metadata

Field	Value
Publication number	US-12074247-B2
Application number	US-202217948056-A
Country	US
Kind code	B2
Filing date	Sep 19, 2022
Priority date	Feb 29, 2016
Publication date	Aug 27, 2024
Grant date	Aug 27, 2024

Abstract

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

First claim

The invention claimed is:

1. A method of manufacturing a rod, the method comprising:
providing a growth substrate and a support substrate;
epitaxial growing a material layer on one surface of the growth substrate;
forming a sacrificial layer on one surface of the support substrate;
bonding an upper surface of the material layer to an upper surface of the sacrificial layer;
separating the growth substrate from the material layer;
forming a rod by vertically etching the material layer to the upper surface of the sacrificial layer; and
separating the rod by removing the sacrificial layer.

2. The method of manufacturing a rod of claim 1 , wherein the growth substrate includes at least one among gallium nitride (GaN), silicon carbide (SIC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP), spinel (MgAl2O4), magnesium oxide (MgO), lithium aluminate (LiAlO2), lithium gallate (LiGaO2), gallium arsenide (GaAs), aluminum nitride (AlN), indium phosphide (InP), and copper (Cu), and
wherein the support substrate includes at least one among a sapphire substrate, a glass substrate, a silicon carbide substrate, a silicon substrate, and a conductive substrate made of a metal material.

3. The method of manufacturing a rod of claim 1 , wherein the material layer includes at least one among zinc oxide (ZnO), gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), tin oxide (SnO2), gallium phosphide (GaP), indium phosphide (InP), zinc selenide (ZnSe), molybdenum disulfide (MoS2), and silicon (Si).

4. The method of manufacturing a rod of claim 1 , wherein the material layer is epitaxially grown by a metal organic chemical vapor deposition (MOCVD) process, and
a precursor of the MOCVD process comprises at least one of trimethyl gallium (Ga(CH3)3), trimethyl aluminum (Al(CH3)3), and triethyl phosphate ((C2H5O)3PO).

5. The method of manufacturing a rod of claim 1 , further comprising flattening the material layer after the separating the growth substrate from the material layer,
wherein the flattening the material layer is performed by chemical mechanical polishing (CMP).

6. The method of manufacturing a rod of claim 1 , wherein the forming a rod by etching the material layer includes forming a mask material layer which is disposed on the material layer and includes a plurality of patterns spaced apart from each other; and
etching an exposed portion between the plurality of patterns of the material layer.

7. The method of manufacturing a rod of claim 6 , wherein the mask material layer includes silicon oxide (SiO2) or silicon nitride (SiN).

8. The method of manufacturing a rod of claim 6 , wherein the etching an exposed portion between the plurality of patterns of the material layer is performed by dry etch or wet etch, and
an etchant of the dry etch includes chlorine gas (Cl2) and hydrocarbon gas.

9. The method of manufacturing a rod of claim 1 , wherein the sacrificial layer comprises an insulating layer disposed on the support substrate; and a metal layer disposed on the insulating layer, and
in the bonding an upper surface of the material layer to an upper surface of the sacrificial layer, the upper surface of the material layer is bonded to an upper surface of the metal layer of the sacrificial layer.

10. The method of manufacturing a rod of claim 9 , wherein the metal layer is made of gold (Au), titanium (Ti), or iron (Fe), and
the insulating layer is made of silicon oxide (SiO2), or silicon nitride (SiN).

11. The method of manufacturing a rod of claim 10 , wherein, when the insulating layer of the sacrificial layer is made of SiO2, the separating the rod by removing the sacrificial layer includes removing the sacrificial layer using a buffered oxide etchant (BOE), and
when the sacrificial layer is made of a metal layer, the separating the rod by removing the sacrificial layer includes removing the sacrificial layer using a metal etchant.

12. The method of manufacturing a rod of claim 9 , wherein the forming the sacrificial layer on one surface of the support substrate includes forming a bonding layer on an upper surface of the support substrate; and
forming the sacrificial layer on the bonding layer so as to be in contact with a lower surface of the insulating layer and an upper surface of the bonding layer.

13. The method of manufacturing a rod of claim 1 , wherein the epitaxial growing a material layer on one surface of the growth substrate comprises forming a buffer layer on an upper surface of the growth substrate; and
epitaxial growing the material layer on the buffer layer.

14. The method of manufacturing a rod of claim 1 , wherein the epitaxial growing of the material layer on one surface of the growth substrate includes adjusting a deposition thickness of the material layer to control a length of the rod.

15. The method of manufacturing a rod of claim 1 , wherein the separating the growth substrate from the material layer includes irradiating a laser beam between the material layer and the growth substrate so as to separate the growth substrate from the material layer.

16. The method of manufacturing a rod of claim 1 , wherein the growth substrate includes a base and a sacrificial layer disposed on the base, and
the separating the growth substrate from the material layer includes removing the sacrificial layer of the growth substrate so as to separate the growth substrate from the material layer using one among a laser lift-off (LLO) method, a chemical lift-off (CLO) method, and an electrochemical lift-off (ELO) method.

17. The method of manufacturing a rod of claim 1 , wherein the epitaxial growing the material layer includes forming a first material layer on the growth substrate;
etching the first material layer to form a porous material layer by using electrochemical etching; and
forming a second material layer on the porous material layer,
wherein the sacrificial layer is bonded to an upper surface of the second material layer, and
the separating the growth substrate from the material layer includes removing the porous material layer of the growth substrate so as to separate the growth substrate from the second material layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Do Young Rag
• Sung Yeon Goog

Classifications

• H10P14/3418

  Phosphides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P90/1914 Primary

  using bonding · CPC title