Nanorod production method and nanorod produced thereby

Patent metadata

Field	Value
Publication number	US-11450737-B2
Application number	US-202016806639-A
Country	US
Kind code	B2
Filing date	Mar 2, 2020
Priority date	Feb 29, 2016
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

First claim

The invention claimed is:

1. A method of manufacturing a light emitting diode, the method comprising:
providing a support substrate having a sacrificial layer disposed on one surface thereof;
forming a plurality of light emitting diodes on the sacrificial layer; and
separating the plurality of light emitting diodes from the support substrate by removing the sacrificial layer,
wherein forming the plurality of light emitting diodes comprises:
providing a growth substrate;
epitaxially growing a material layer on one surface of the growth substrate;
directly bonding the material layer to the sacrificial layer disposed on the one surface of the support substrate; and
separating the growth substrate from the material layer, and

wherein the sacrificial layer is removed by etching.

2. The method of manufacturing a light emitting diode of claim 1 , wherein forming the plurality of light emitting diodes further comprises:
etching the material layer to form the plurality of light emitting diodes.

3. The method of manufacturing a light emitting diode of claim 2 , wherein the material layer is etched in a direction perpendicular to the one surface of the support substrate to form the plurality of light emitting diodes.

4. The method of manufacturing a light emitting diode of claim 2 , wherein forming the plurality of light emitting diodes further comprises flattening the material layer after directly bonding the material layer to the sacrificial layer.

5. The method of manufacturing a light emitting diode of claim 1 , wherein the growth substrate includes at least one among a glass substrate, a quartz substrate, a sapphire substrate, a plastic substrate, and a bendable flexible polymer film.

6. The method of manufacturing a light emitting diode of claim 1 , wherein the growth substrate includes at least one of gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP), spinel (MgAl 2 O 4 ), magnesium oxide (MgO), lithium aluminate (LiAlO 2 ), lithium gallate (LiGaO 2 ), gallium arsenide (GaAs), aluminum nitride (AlN), indium phosphide (InP), and copper (Cu).

7. The method of manufacturing a light emitting diode of claim 1 , wherein the support substrate includes at least one of a sapphire substrate, a glass substrate, a silicon carbide substrate, a silicon substrate, and a conductive substrate made of a metal material.

8. The method of manufacturing a light emitting diode of claim 2 , wherein the material layer includes at least one of zinc oxide (ZnO), gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), tin oxide (SnO 2 ), gallium phosphide (GaP), indium phosphide (InP), zinc selenide (ZnSe), molybdenum disulfide (MoS 2 ), and silicon (Si).

9. The method of manufacturing a light emitting diode of claim 8 , wherein the material layer is epitaxially grown by metal organic chemical vapor deposition (MOCVD).

10. The method of manufacturing a light emitting diode of claim 1 , wherein the epitaxially growing the material layer on the one surface of the growth substrate includes controlling a length of the light emitting diode by adjusting a deposition thickness of the material layer.

11. The method of manufacturing a light emitting diode of claim 1 , wherein the sacrificial layer is made of gold (Au), titanium (Ti), iron (Fe), silicon oxide (SiO 2 ), or silicon nitride (SiN).

12. The method of manufacturing a light emitting diode of claim 1 , wherein the sacrificial layer includes an insulating layer on the one surface of the support substrate and a metal layer on the insulating layer.

13. The method of manufacturing a light emitting diode of claim 1 , wherein the separating of the growth substrate from the material layer includes separating the growth substrate from the material layer using one of a laser lift-off (LLO) method, a chemical lift-off (CLO) method, and an electrochemical lift-off (ELO) method.

14. The method of manufacturing a light emitting diode of claim 4 , wherein the flattening of the material layer includes flattening the material layer separated from the growth substrate using chemical mechanical polishing (CMP).

15. The method of manufacturing a light emitting diode of claim 11 , wherein when the sacrificial layer comprises SiO 2 , the separating of the light emitting diode by removing the sacrificial layer includes removing the sacrificial layer using a buffered oxide etchant (BOE).

16. The method of manufacturing a light emitting diode of claim 11 , wherein when the sacrificial layer comprises a metal layer, the separating of the light emitting diode by removing the sacrificial layer includes removing the sacrificial layer using a metal etchant.

Assignees

• Samsung Display Co Ltd

Inventors

• Do Young Rag
• Sung Yeon Goog

Classifications

• H10P14/3418

  Phosphides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P90/1914 Primary

  using bonding · CPC title