LED device with embedded nanowire LEDs

Patent metadata

Field	Value
Publication number	US-9583533-B2
Application number	US-201414210295-A
Country	US
Kind code	B2
Filing date	Mar 13, 2014
Priority date	Mar 13, 2014
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a plurality of nanowires on and protruding away from a first surface of the base layer. An encapsulation material laterally surrounds the plurality of nanowires in the nanowire device, such that the nanowires are embedded within the encapsulation material.

First claim

What is claimed is:

1. A nanowire device comprising:
a base layer including a first surface and a second surface opposite the first surface, wherein the second surface has a maximum lateral dimension of 1 to 100 μm;
a plurality of nanowires on and protruding away from the first surface of the base layer; wherein each nanowire comprises a core, a shell, and an active layer between the core and the shell;
an encapsulation material laterally surrounding the plurality of nanowires, such that the plurality of nanowires is embedded within the encapsulation material;
a top electrode layer on the second surface of the base layer opposite the first surface and in electrical contact with the core of each nanowire; and
a bottom electrode layer in electrical contact with the shell of each nanowire.

2. The nanowire device of claim 1 , wherein the top electrode layer is transparent or semi-transparent to the visible wavelength spectrum.

3. The nanowire device of claim 1 , wherein the bottom electrode includes a mirror layer.

4. The nanowire device of claim 1 , wherein the bottom electrode includes a bonding layer formed of a noble metal.

5. The nanowire device of claim 1 , further comprising one or more bottom conductive contacts on and surrounding the shells of the plurality of nanowires, wherein the bottom electrode layer is in electrical contact with the one or more bottom conductive contacts.

6. The nanowire device of claim 5 , wherein the bottom electrode layer spans along a bottom surface of the encapsulation material.

7. The nanowire device of claim 1 , further comprising a patterned mask layer on the base layer, wherein the cores of the plurality of nanowires extend through corresponding openings in the patterned mask layer.

8. The nanowire device of claim 1 , wherein the encapsulation material comprises a thermoset material.

9. The nanowire device of claim 7 , wherein the encapsulation material is transparent to the visible wavelength spectrum.

10. The nanowire device of claim 1 , wherein the second surface has a maximum lateral dimension of 1 to 20 μm.

11. The nanowire device of claim 1 , further comprising a through-hole through an entire thickness of the base layer located laterally between two nanowires.

12. The nanowire device of claim 1 , wherein the bottom electrode layer is bonded to and in electrical contact with a contact pad of a display substrate.

13. The nanowire device of claim 1 , wherein the bottom electrode layer is bonded to a display substrate with a material comprising indium or tin.

14. The nanowire device of claim 1 , wherein the top electrode layer has a planar top surface.

15. A structure comprising:
a carrier substrate;
a stabilization layer on the carrier substrate;
an array of nanowire devices on the stabilization layer:
wherein each nanowire device comprises:
a base layer including a first surface and a second surface opposite the first surface, wherein the second surface has a maximum lateral dimension of 1 to 100 μm;
a plurality of nanowires on and protruding away from the first surface of the base layer; wherein each nanowire comprises a core, a shell, and an active layer between the core and the shell;
an encapsulation material laterally surrounding the plurality of nanowires, such that the plurality of nanowires is embedded within the encapsulation material;
a top electrode layer on the second surface of the base layer opposite the first surface and in electrical contact with the core of each nanowire; and
a bottom electrode layer in electrical contact with the shell of each nanowire.

16. The structure of claim 15 , further comprising a sacrificial release layer spanning between the stabilization layer and the array of nanowire devices.

17. The nanowire device of claim 16 , wherein the stabilization layer comprises a thermoset material.

18. The nanowire device of claim 16 , wherein the stabilization layer comprises an array of staging cavities, and the array of nanowire devices is within the array of staging cavities.

19. The nanowire device of claim 16 , wherein the stabilization layer comprises an array of stabilization posts, and the array of nanowire devices is supported by the array of stabilization posts.

20. The nanowire device of claim 19 , wherein the bottom electrode layer for each nanowire device is bonded to a corresponding stabilization post.

Assignees

• Luxvue Tech Corp
• Apple Inc

Inventors

• Hu Hsin-Hua
• Bibl Andreas

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/0711

  Apparatus therefor · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title