Systems and methods for reducing effluent build-up in a pumping exhaust system

Patent metadata

Field	Value
Publication number	US-12049698-B2
Application number	US-202217737121-A
Country	US
Kind code	B2
Filing date	May 5, 2022
Priority date	Sep 13, 2016
Publication date	Jul 30, 2024
Grant date	Jul 30, 2024

Abstract

A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

First claim

What is claimed is:

1. A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system, the method comprising:
during a substrate treatment process:
arranging a substrate on a substrate support in a processing chamber;
supplying one or more process gases to the processing chamber, wherein the one or more process gases include a precursor gas and an oxidizer gas;
supplying only an inert dilution gas to the pumping exhaust system, the inert dilution gas being supplied at a first flow rate, wherein the first flow rate is greater than a first predetermined flow rate that is sufficient to prevent combustion of the precursor gas and the oxidizer gas in the pumping exhaust system;
performing the substrate treatment process on the substrate in the processing chamber; and
evacuating substances from the processing chamber using the pumping exhaust system; and
after the substrate treatment process:
supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process for reducing effluent buildup in the pumping exhaust system of the substrate processing system; and
supplying only the inert dilution gas to the pumping exhaust system during the cleaning process, the inert dilution gas being supplied at a second flow rate that is less than the first flow rate, wherein the second flow rate is at a second predetermined flow rate that would be insufficient to prevent combustion of the precursor gas and the oxidizer gas if used during the substrate treatment process.

2. The method of claim 1 , wherein the pumping exhaust system includes a valve, a pump, an abatement device, and exhaust lines connecting the valve to the processing chamber, the pump to the valve, and the abatement device to the pump, the method further comprising supplying the inert dilution gas between at least one of the valve and the pump, and the pump and the abatement device.

3. The method of claim 1 , wherein the substrate treatment process includes one of plasma-enhanced atomic layer deposition and plasma-enhanced chemical vapor deposition.

4. The method of claim 1 , wherein the one or more process gases include the precursor gas, the oxidizer gas, and a carrier gas.

5. The method of claim 4 , wherein the precursor gas includes silicon precursor gas.

6. The method of claim 4 , wherein the oxidizer gas is selected from a group including molecular oxygen and nitrous oxide.

7. The method of claim 1 , wherein the inert dilution gas includes molecular nitrogen.

8. The method of claim 1 , wherein the pumping exhaust system includes a pump having a resistive heater to heat the substances and the inert dilution gas flowing through the pump, the method further comprising not activating the resistive heater during the cleaning process.

9. The method of claim 1 , wherein the first flow rate is greater than or equal to twice the second flow rate.

10. The method of claim 1 , wherein supplying the cleaning plasma includes:
supplying the cleaning gas to the processing chamber during the cleaning process; and
striking the cleaning plasma in the processing chamber.

11. The method of claim 1 , wherein supplying the cleaning plasma includes:
remotely generating the cleaning plasma; and
supplying the cleaning plasma to the processing chamber.

12. The method of claim 2 , further comprising heating the exhaust lines during the cleaning process.

Assignees

• Lam Res Corp

Inventors

• Xavier Antonio
• Goza Steven
• Chandrasekharan Ramesh
• Lavoie Adrien
• Nesmith Joseph

Classifications

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title