Hall effect enhanced capacitively coupled plasma source

US9230780B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9230780-B2
Application numberUS-201414199974-A
CountryUS
Kind codeB2
Filing dateMar 6, 2014
Priority dateMar 6, 2014
Publication dateJan 5, 2016
Grant dateJan 5, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

First claim

Opening claim text (preview).

The invention claimed is: 1. A plasma source, comprising: a first plate having an outer edge and an inner edge; a second plate parallel to the first plate, wherein the second plate has an outer edge and an inner edge; an outer wall disposed between the outer edges of the first and second plates; an electrode disposed between the inner edges of the first and second plates; a first plurality of magnets disposed on the first plate; and a second plurality of magnets disposed on the second plate. 2. The plasma source of claim 1 , wherein the first plate and the second plate are annular. 3. The plasma source of claim 1 , wherein the outer wall has a first end and a second end, wherein the first end is in contact with the outer edge of the first plate and the second end is in contact with the outer edge of the second plate. 4. The plasma source of claim 3 , wherein the electrode has a first end and a second end, wherein the first end is in proximity to the inner edge of the first plate and the second end is in proximity to the inner edge of the second plate. 5. The plasma source of claim 4 , further comprising a first insulating ring disposed between the first end of the electrode and the inner edge of the first plate. 6. The plasma source of claim 5 , further comprising a second insulating ring disposed between the second end of the electrode and the inner edge of the second plate. 7. The plasma source of claim 1 , wherein the first plurality of magnets has an annular shape and the second plurality of magnets has an annular shape. 8. The plasma source of claim 7 , wherein a plasma region is defined by the electrode, the outer wall, the first plate and the second plate. 9. The plasma source of claim 8 , wherein a polarity of the first plurality of magnets facing the plasma region is opposite to a polarity of the second plurality of magnets facing the plasma region. 10. A plasma source, comprising: a cylindrical electrode having a first end and a second end; an outer cylindrical wall surrounding the cylindrical electrode, wherein the outer cylindrical wall has a first end and a second end; a first annular plate having an inner edge and an outer edge, wherein the inner edge is in proximity to the first end of the cylindrical electrode and the outer edge is adjacent to the first end of the outer cylindrical wall; a second annular plate having an inner edge and an outer edge, wherein the inner edge is in proximity to the second end of the cylindrical electrode and the outer edge is adjacent to the second end of the outer cylindrical wall, and wherein a plasma region is defined by the cylindrical electrode, the outer cylindrical wall, the first annular plate and the second annular plate; a first plurality of magnets disposed on the first annular plate; and a second plurality of magnets disposed on the second annular plate. 11. The plasma source of claim 10 , wherein the first plurality of magnets has an annular shape and the second plurality of magnets has an annular shape. 12. The plasma source of claim 10 , wherein a polarity of the first plurality of magnets facing the plasma region is opposite to a polarity of the second plurality of magnets facing the plasma region. 13. The plasma source of claim 10 , wherein the cylindrical electrode is hollow and has a first surface facing the outer cylindrical wall and a second surface opposite the first surface. 14. The plasma source of claim 13 , further comprising a cooling jacket in contact with the second surface of the cylindrical electrode. 15. A plasma source, comprising: a first annular plate having an outer edge and an inner edge; a second annular plate parallel to the first annular plate, wherein the second annular plate has an outer edge and an inner edge, and wherein the first annular plate has a surface facing the second annular plate and the second annular plate has a surface facing the first annular plate; an outer cylindrical wall disposed between the outer edges of the first and second annular plates; an cylindrical electrode disposed between the inner edges of the first and second annular plates; a first shield disposed adjacent to the surface of the first annular plate; and a second shield disposed adjacent to the surface of the second annular plate. 16. The plasma source of claim 15 , further comprising a third shield disposed adjacent to the outer cylindrical wall. 17. The plasma source of claim 15 , wherein the first shield and the second shield each comprises a stack of plates. 18. The plasma source of claim 17 , wherein the plates are annular and each has an inner edge and an outer edge. 19. The plasma source of claim 18 , wherein each plate has a different distance between the inner edge and the outer edge. 20. The plasma source of claim 17 , wherein each plate has a step and the outer edge is non-linear to the inner edge.

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What does patent US9230780B2 cover?
Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plura…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/32091. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).