Method for depositing boron nitride film and film deposition apparatus

Patent metadata

Field	Value
Publication number	US-12049694-B2
Application number	US-202217648950-A
Country	US
Kind code	B2
Filing date	Jan 26, 2022
Priority date	Jan 27, 2021
Publication date	Jul 30, 2024
Grant date	Jul 30, 2024

Abstract

A method for depositing a boron nitride film is provided. In the method, a seed layer is formed on a surface of a substrate by supplying an aminosilane gas to the surface of the substrate. The surface of the substrate includes bases having different incubation times for depositing a boron nitride film. A boron nitride film is deposited on the seed layer.

First claim

What is claimed is:

1. A method for depositing a boron nitride film, the method comprising:
preparing a base including a silicon base and a silicon dioxide base, said base having an upper face having a mixture of a first surface where the silicon base is provided and a second surface where the silicon dioxide base is provided, said first surface and said second surface being provided on a same plane of the base in a plan view, said silicon dioxide base having a second incubation time for forming a boron nitride film thereon, said second incubation time being different from a first incubation time for forming the boron nitride film on the silicon base,
forming a seed layer on the face of the base by supplying diisopropylaminosilane gas to the face of the base at a flow rate of 500 sccm for 5 minutes or a flow rate of 200 sccm for 10 minutes; and
depositing the boron nitride film on the seed layer.

2. The method as claimed in claim 1 , wherein the depositing the boron nitride film on the seed layer comprises depositing the boron nitride film by Chemical Vapor Deposition on the seed layer by supplying a boron-containing gas and a nitrogen-containing gas.

3. The method as claimed in claim 2 ,
wherein the boron-containing gas is B 2 H 6 (diborane), BCl 3 (boron trichloride), TEB (triethylborane), TMB (trimethylborane), or DMAB (dimethylaminoborane), and
wherein the nitrogen-containing gas is ammonia.

4. The method as claimed in claim 2 , wherein the boron-containing gas is B 2 H 6 (diborane),
wherein the nitrogen-containing gas is ammonia, and
wherein a difference in incubation time between a film thickness change characteristic of the boron nitride film on the silicon base and a film thickness change characteristic of the boron nitride film on the silicon dioxide base is approximately 0.5 minutes.

5. The method as claimed in claim 1 , further comprising:
depositing a carbon film on the boron nitride film.

6. The method as claimed in claim 1 , further comprising:
supplying a boron-containing gas to the base between the forming the seed layer and the depositing the boron nitride film.

7. The method as claimed in claim 1 , wherein a difference in incubation time between a film thickness change characteristic of the boron nitride film on the silicon base and a film thickness change characteristic of the boron nitride film on the silicon dioxide base is approximately 4 minutes.

8. The method as claimed in claim 1 , wherein the method further comprises supplying C 4 H 6 gas so as to form a carbon film on the boron nitride film.

9. The method as claimed in claim 1 , wherein the seed layer is formed on both of the first surface and the second surface of the base.

Assignees

• Tokyo Electron Ltd

Inventors

• Chida Shota
• Watanabe Yosuke

Classifications

• C23C16/4584

  the substrate being rotated · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/342 Primary

  Boron nitride · CPC title

• C23C16/26

  Deposition of carbon only · CPC title

• C23C16/0272

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title