Determining and controlling substrate temperature during substrate processing

Patent metadata

Field	Value
Publication number	US-12020960-B2
Application number	US-201917045887-A
Country	US
Kind code	B2
Filing date	Apr 8, 2019
Priority date	Apr 12, 2018
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

A temperature controller for substrate processing system includes memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, a temperature calculation module configured to calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model, and a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.

First claim

What is claimed is:

1. A temperature controller for substrate processing system, the temperature controller comprising:
memory that stores a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support, and stores a heat transfer gas pressure model which correlates an input pressure to the heat transfer gas pressure based on heat transfer gas flows within the substrate support;
a temperature calculation module configured to calculate the heat transfer gas pressure using the heat transfer gas pressure model, and calculate the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model; and
a heat transfer gas control module configured to adjust the heat transfer gas pressure based on the second temperature of the substrate calculated by the temperature calculation module and a desired third temperature of the substrate.

2. The temperature controller of claim 1 , wherein the substrate support includes a plurality of zones and the first temperature of the substrate support corresponds to respective temperatures in each of the plurality of zones.

3. The temperature controller of claim 2 , wherein the second temperature of the substrate corresponds to a plurality of substrate temperatures, and wherein the plurality of substrate temperatures corresponds to the plurality of zones of the substrate support.

4. The temperature controller of claim 3 , wherein, to adjust the heat transfer gas pressure, the heat transfer gas control module is configured to adjust a plurality of pressure controllers, and wherein each of the plurality of pressure controllers corresponds to one of the plurality of zones of the substrate support.

5. The temperature controller of claim 1 , wherein the desired third temperature of the substrate corresponds to a recipe setpoint.

6. The temperature controller of claim 1 , wherein the temperature calculation module is configured to receive the desired third temperature from a user interface.

7. The temperature controller of claim 1 , wherein the temperature calculation module is configured to provide the second temperature of the substrate to a display.

8. The temperature controller of claim 1 , wherein the temperature control model is configured to calculate the heat transfer gas pressure based on a relationship between a controlled heat transfer gas pressure and an actual heat transfer gas pressure between the substrate and the substrate support.

9. The temperature controller of claim 8 , wherein, to calculate the second temperature of the substrate, the temperature calculation module is configured to (i) using the heat transfer gas pressure model, calculate the actual heat transfer gas pressure based on the controlled heat transfer gas pressure and (ii) calculate the second temperature of the substrate based on the actual heat transfer gas pressure and the first temperature of the substrate support.

10. The temperature controller of claim 1 , wherein, to calculate the second temperature of the substrate, the temperature calculation module is configured to (i) receive the heat transfer gas pressure from a pressure sensor arranged within the substrate support and (ii) calculate the second temperature of the substrate based on the heat transfer gas pressure received from the pressure sensor.

11. A method for controlling temperature of a substrate support in a substrate processing system, the method comprising:
storing, in memory, a temperature control model that correlates a heat transfer gas pressure and a first temperature of a substrate support to a second temperature of a substrate arranged on the substrate support;
storing, in the memory, a heat transfer gas pressure model which correlates an input pressure to the heat transfer gas pressure based on heat transfer gas flows within the substrate support;
calculating the heat transfer gas pressure using the heat transfer gas pressure model;
calculating the second temperature of the substrate using the heat transfer gas pressure, the first temperature of the substrate support, and the temperature control model; and
adjusting the heat transfer gas pressure based on the calculated second temperature of the substrate and a desired third temperature of the substrate.

12. The method of claim 11 , wherein the substrate support includes a plurality of zones and the first temperature of the substrate support corresponds to respective temperatures in each of the plurality of zones.

13. The method of claim 12 , wherein the second temperature of the substrate corresponds to a plurality of substrate temperatures, and wherein the plurality of substrate temperatures corresponds to the plurality of zones of the substrate support.

14. The method of claim 13 , wherein adjusting the heat transfer gas pressure includes adjusting a plurality of pressure controllers, and wherein each of the plurality of pressure controllers corresponds to one of the plurality of zones of the substrate support.

15. The method of claim 11 , wherein the desired third temperature of the substrate corresponds to a recipe setpoint.

16. The method of claim 11 , further comprising receiving the desired third temperature from a user interface.

17. The method of claim 11 , further comprising providing the second temperature of the substrate to a display.

18. The method of claim 11 , further comprising calculating the heat transfer gas pressure based on a relationship between a controlled heat transfer gas pressure and an actual heat transfer gas pressure between the substrate and the substrate support.

19. The method of claim 18 , wherein calculating the second temperature of the substrate includes (i) using the heat transfer gas pressure model, calculating the actual heat transfer gas pressure based on the controlled heat transfer gas pressure and (ii) calculating the second temperature of the substrate based on the actual heat transfer gas pressure and the first temperature of the substrate support.

20. The method of claim 11 , wherein calculating the second temperature of the substrate includes (i) receiving the heat transfer gas pressure from a pressure sensor arranged within the substrate support and (ii) calculating the second temperature of the substrate based on the heat transfer gas pressure received from the pressure sensor.

Assignees

• Lam Res Corp

Inventors

• Smith Jeremy George
• Pape Eric A

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• G05B17/02

  electric · CPC title

• H01L21/68771

  Electricity · mapped topic