Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12020943-B2
Application number	US-202217690709-A
Country	US
Kind code	B2
Filing date	Mar 9, 2022
Priority date	Mar 17, 2021
Publication date	Jun 25, 2024
Grant date	Jun 25, 2024

Abstract

A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

First claim

What is claimed is:

1. A substrate processing method comprising: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape and a silicide has been formed at an interface between the laminated film and the zirconium oxide film; after the preparing process, a mask removing process of removing the zirconium oxide film from a surface of the substrate by supplying, to the substrate, a mask removing liquid containing a mixture of sulfuric acid and pure water, wherein the sulfuric acid is a main component of the mask removing liquid; after the mask is removed from the surface of the substrate, a residue removing process of removing a residue including at least one of the silicide or a sulfur component from the surface of the substrate by supplying an aqueous solution containing a fluoride compound to the substrate; and after the residue removing process, a drying process of drying the surface of the substrate that is wet with a rinsing liquid.

2. The substrate processing method of claim 1 , further comprising:
between the mask removing process and the residue removing process, another residue removing process of removing a residue including the sulfur component by supplying heated pure water to the substrate.

3. The substrate processing method of claim 1 , wherein, in the drying process, on the surface of the substrate that is wet with the rinsing liquid, the rinsing liquid is replaced with a water-soluble alcohol, and then the surface of the substrate is dried.

4. The substrate processing method of claim 1 , wherein, in the drying process, the surface of the substrate is dried using a processing fluid in a supercritical state.

5. The substrate processing method of claim 1 , wherein the drying process includes:
a first replacing process of replacing the rinsing liquid on the surface of the substrate that is wet with the rinsing liquid with an organic solvent;
a water-repellent process of supplying a water-repellent agent to the surface of the substrate after the first replacing process;
a second replacing process of replacing the water-repellent agent on the surface of the substrate with an organic solvent after the water-repellent process; and
a shake-off process of shaking off the organic solvent located on the surface of the substrate after the second replacing process.

6. The substrate processing method of claim 1 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and the pure water are mixed.

7. The substrate processing method of claim 1 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and steam are mixed.

8. A substrate processing method comprising: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape and a silicide has been formed at an interface between the laminated film and the zirconium oxide film; after the preparing process, a mask removing process of removing the zirconium oxide film from a surface of the substrate by supplying, to the substrate, a mask removing liquid containing a mixture of sulfuric acid and pure water, wherein the sulfuric acid is a main component of the mask removing liquid; after the mask is removed from the surface of the substrate, a residue removing process of removing a residue including at least one of the silicide or a sulfur component from the surface of the substrate by supplying an aqueous solution containing ammonia to the substrate; and after the residue removing process, a drying process of drying the surface of the substrate that is wet with a rinsing liquid.

9. The substrate processing method of claim 8 , further comprising: between the mask removing process and the residue removing process, another residue removing process of removing a residue including the sulfur component by supplying heated pure water to the substrate.

10. The substrate processing method of claim 8 , wherein, in the drying process, on the surface of the substrate that is wet with the rinsing liquid, the rinsing liquid is replaced with a water-soluble alcohol, and then the surface of the substrate is dried.

11. The substrate processing method of claim 8 , wherein, in the drying process, the surface of the substrate is dried using a processing fluid in a supercritical state.

12. The substrate processing method of claim 8 , wherein the drying process includes:
a first replacing process of replacing the rinsing liquid on the surface of the substrate that is wet with the rinsing liquid with an organic solvent;
a water-repellent process of supplying a water-repellent agent to the surface of the substrate after the first replacing process;
a second replacing process of replacing the water-repellent agent on the surface of the substrate with an organic solvent after the water-repellent process; and
a shake-off process of shaking off the organic solvent located on the surface of the substrate after the second replacing process.

13. The substrate processing method of claim 8 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and the pure water are mixed.

14. The substrate processing method of claim 8 , wherein, in the mask removing process, the mask removing liquid is heated by reaction heat generated when the sulfuric acid and steam are mixed.

Assignees

• Tokyo Electron Ltd

Inventors

• Yamashita Atsushi
• Kagawa Koji

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title