Sensor element and method for producing a sensor element

Patent metadata

Field	Value
Publication number	US-12014852-B2
Application number	US-202017636286-A
Country	US
Kind code	B2
Filing date	Sep 15, 2020
Priority date	Oct 16, 2019
Publication date	Jun 18, 2024
Grant date	Jun 18, 2024

Abstract

In an embodiment a sensor element includes at least one carrier layer having a top side and an underside and at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and includes a material having a temperature-dependent electrical resistance, wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and wherein the sensor element is configured to measure a temperature.

First claim

The invention claimed is:

1. A sensor element comprising:
at least one carrier layer having a top side and an underside;
at least one functional layer arranged at the top side of the carrier layer and comprising a material having a temperature-dependent electrical resistance; and
at least one protective layer,
wherein the protective layer is arranged at a top side of the sensor element and at at least one side surface of the sensor element,
wherein the protective layer completely covers the top side of the sensor element,
wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and
wherein the sensor element is configured to measure a temperature.

2. The sensor element according to claim 1 , wherein the carrier layer comprises silicon, silicon carbide or glass.

3. The sensor element according to claim 1 , wherein the functional layer comprises a thin-film negative temperature coefficient (NTC) layer.

4. The sensor element according to claim 1 , wherein the functional layer comprises a semiconducting material based on silicon carbide in a hexagonal, wurtzite-like structure or a cubic phase in a zinc blende structure type, or wherein the functional layer comprises a metal nitride in the wurtzite structure type.

5. The sensor element according to claim 1 , wherein the protective layer comprises SiO 2 .

6. The sensor element according to claim 1 , further comprising at least one feedthrough, wherein the feedthrough completely penetrates through the carrier layer, and wherein at least one contact element for electrically contacting the sensor element is arranged at the underside of the carrier layer.

7. The sensor element according to claim 6 , wherein the sensor element comprises at least two feedthroughs, wherein two contact elements are arranged at the underside of the carrier layer.

8. The sensor element according to claim 1 , further comprising at least one top electrode, wherein the top electrode is configured for electrically contacting the functional layer from a top side of the functional layer.

9. The sensor element according to claim 8 , wherein the top electrode is arranged directly on the functional layer.

10. The sensor element according to claim 8 , wherein the top electrode comprises at least one sputtered layer.

11. The sensor element according to claim 8 , further comprising at least two top electrodes, wherein the top electrodes are arranged next to one another, and wherein the top electrodes are spatially separated and electrically isolated from one another by at least one cutout.

12. The sensor element according to claim 1 , wherein the sensor element is configured for direct integration into a MEMS structure and/or into a semiconductor embedded in substrate (SESUB) structure.

13. A method for producing the sensor element according to claim 1 , the method comprising:
providing a carrier material for forming the carrier layer;
forming at least one feedthrough, wherein the feedthrough completely penetrates through the carrier material;
filling the at least one feedthrough with a metallic material;
coating the carrier material with a sensor material for forming the functional layer; and
singulating for forming the sensor element.

14. The method according to claim 13 , further comprising depositing at least one top electrode onto a top side of the sensor material before singulating the sensor element.

15. The method according to claim 13 , wherein the sensor material comprises a negative temperature coefficient (NTC) material.

16. The method according to claim 13 , further comprising heating after coating the carrier material with the sensor material.

17. The method according to claim 13 , wherein coating the carrier material with the sensor material is performed before forming the at least one feedthrough.

18. A sensor element comprising:
at least one carrier layer having a top side and an underside;
at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and comprises a material having a temperature-dependent electrical resistance; and
at least one protective layer arranged at a top side of the sensor element and at least one side surface of the sensor element, wherein the protective layer completely covers the top side of the sensor element,
wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system,
wherein the sensor element is configured for direct integration into a MEMS structure and/or into a semiconductor embedded in substrate (SESUB) structure, and
wherein the sensor element is configured to measure a temperature.

Assignees

• Tdk Electronics Ag

Inventors

• Ihle Jan
• Bernert Thomas
• Kloiber Gerald

Classifications

• H10D1/474

  comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · CPC title

• H01C17/075

  by thin-film techniques · CPC title

• H01C7/048

  Carbon or carbides · CPC title

• H01C1/1413

  Terminals or electrodes formed on resistive elements having negative temperature coefficient · CPC title

• G01K7/22 Primary

  the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title