Continuous gate and fin spacer for advanced integrated circuit structure fabrication
US-2024038578-A1 · Feb 1, 2024 · US
comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D1/474 |
| Official title | {comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides} |
| Display label | comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides |
| Total patents | 897 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 68 |
| 2016 | 64 |
| 2017 | 60 |
| 2018 | 96 |
| 2019 | 102 |
| 2020 | 81 |
| 2021 | 66 |
| 2022 | 76 |
| 2023 | 92 |
| 2024 | 79 |
| 2025 | 92 |
| 2026 | 21 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Resistive RAM and method of manufacturing the same
US-9224947-B1 · Dec 29, 2015 · US
Formation of metal resistor and e-fuse
US-2015364419-A1 · Dec 17, 2015 · US
Semiconductor device and manufacturing method of semiconductor device
US-2015348908-A1 · Dec 3, 2015 · US
Semiconductor device and method of manufacturing the same
US-2015348900-A1 · Dec 3, 2015 · US
Semiconductor device and method for low resistive thin film resistor interconnect
US-9190462-B2 · Nov 17, 2015 · US
Embedded tungsten resistor
US-9184226-B2 · Nov 10, 2015 · US
Semiconductor Device and Method for Forming Same
US-2015318341-A1 · Nov 5, 2015 · US
Integrated circuits with resistor structures formed from gate metal and methods for fabricating same
US-2015311272-A1 · Oct 29, 2015 · US
Memristors and methods of fabrication
US-9172035-B2 · Oct 27, 2015 · US
Semiconductor device and manufacturing method thereof
US-2015303143-A1 · Oct 22, 2015 · US
Methods for fabricating integrated circutis and components thereof
US-2015303117-A1 · Oct 22, 2015 · US
Semiconductor process
US-9165997-B2 · Oct 20, 2015 · US
Metal Gate Structure and Method
US-2015295060-A1 · Oct 15, 2015 · US
Resistor and fabrication method thereof
US-9147678-B2 · Sep 29, 2015 · US
Semiconductor Device
US-2015263723-A1 · Sep 17, 2015 · US
Semiconductor device and method of manufacturing the same
US-9136216-B2 · Sep 15, 2015 · US
Resistor structure and method for forming the same
US-2015255532-A1 · Sep 10, 2015 · US
Method and apparatus for forming an integrated circuit with a metalized resistor in a standard cell configuration
US-2015249080-A1 · Sep 3, 2015 · US
Semiconductor device with resistance circuit
US-2015243650-A1 · Aug 27, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D1/474?
- CPC H10D1/474 is the Cooperative Patent Classification code for “comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides.”
- How many patents are filed under CPC H10D1/474 (comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides)?
- Our database includes 897 publications tagged with this CPC code.
- Is patent activity under CPC H10D1/474 growing?
- Publication counts under this code: 79 in 2024 vs 92 in 2025 (latest complete years).