Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-11961898-B2
Application number	US-202117546303-A
Country	US
Kind code	B2
Filing date	Dec 9, 2021
Priority date	Jan 25, 2021
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.

First claim

What is claimed is:

1. A method of patterning a two-dimensional (2D) material layer, the method comprising:
selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer;
forming a 2D material layer including a 2D material at in both the first region and the second region, wherein an adhesive force between the 2D material and the first material layer in the first region is greater than an adhesive force between the 2D material and a separate material in the second region; and
removing the 2D material layer from the second region based on using a physical removal method and not removing the 2D material layer from the first region, such that the 2D material layer remains exclusively in the first region, based on the adhesive force between the 2D material and the first material layer in the first region being greater than the adhesive force between the 2D material and the separate material in the second region.

2. The method of claim 1 , wherein the first material layer includes a metal layer.

3. The method of claim 2 , wherein the metal layer includes at least one of copper, nickel, gold, or platinum.

4. The method of claim 1 , wherein the first material layer comprises a metal oxide layer.

5. The method of claim 4 , wherein the metal oxide layer comprises at least one of TiO 2 or HFO 2 .

6. The method of claim 1 , wherein the first material layer comprises a self-assembled monolayer.

7. The method of claim 6 , wherein the self-assembled monolayer includes at least one of a —NH 2 functional group or a —SH 2 functional group.

8. The method of claim 1 , wherein the 2D material layer comprises at least one of graphene, black phosphorous, or a transition-metal dichalcogenide.

9. The method of claim 1 , wherein the forming of both the first region and the second region includes forming, on the surface of the substrate in the second region, a second material layer having a weak adhesive force with respect to the 2D material.

10. The method of claim 9 , wherein the second material layer comprises at least one of Si, SiO 2 , or Al 2 O 3 .

11. The method of claim 9 , wherein the second material layer comprises a self-assembled monolayer including at least one of a —CF 3 functional group or a —CH 3 functional group.

12. The method of claim 1 , wherein the physical removal method comprises one of sonication or mechanical detachment.

13. A method of manufacturing a semiconductor device, the method comprising:
selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer;
forming a 2D material layer having a layered structure of a two-dimensional (2D) material in both the first region and the second region, wherein an adhesive force between the 2D material and the first material layer in the first region is greater than an adhesive force between the 2D material and a separate material in the second region;
removing the 2D material layer from the second region based on using a physical removal method, and not removing the 2D material layer from the first region, such that the 2D material layer remains exclusively in the first region, based on the adhesive force between the 2D material and the first material layer in the first region being greater than the adhesive force between the 2D material and the separate material in the second region, wherein the 2D material layer that remains exclusively in the first region;
forming a channel layer based on the removing the 2D material layer from the second region based on using the physical removal method, wherein the channel layer includes the 2D material layer that remains exclusively in the first region;
forming a first electrode and a second electrode, wherein the first electrode and the second electrode are each in direct contact with the channel layer and are isolated from direct contact with each other; and
forming a third electrode extending in parallel with the channel layer.

14. The method of claim 13 , wherein the 2D material layer comprises at least one of graphene, black phosphorous, or a transition-metal dichalcogenide.

15. The method of claim 14 , wherein the first material layer is one of:
a metal layer including at least one of copper, nickel, gold, or platinum;
a metal oxide layer including at least one of TiO 2 or HfO 2 ; or
a self-assembled monolayer including at least one of a —NH 2 functional group or a —SH 2 functional group.

16. The method of claim 13 , wherein the forming of both the first region and the second region includes forming, on the surface of the substrate in the second region, a second material layer having a weak adhesive force with respect to the 2D material.

17. The method of claim 16 , wherein the 2D material layer comprises at least one of graphene, black phosphorous, or a transition-metal dichalcogenide.

18. The method of claim 17 , wherein the second material layer comprises at least one of Si, SiO 2 , or Al 2 O 3 .

19. The method of claim 17 , wherein the second material layer comprises a self-assembled monolayer including at least one of a —CF 3 functional group or a —CH 3 functional group.

20. The method of claim 13 , wherein the physical removal method comprises one of sonication or mechanical detachment.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Nguyen Van Luan
• Seol Minsu
• Kwon Junyoung
• Shin Hyeonjin
• Yoo Minseok
• Cho Yeonchoo

Classifications

• H10P95/60

  Mechanical treatments, e.g. by ultrasounds · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title