Direct band gap group IV semiconductors and methods of preparing the same
US-10263136-B1 · Apr 16, 2019 · US
US10804102B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10804102-B2 |
| Application number | US-201916274375-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 13, 2019 |
| Priority date | Apr 19, 2018 |
| Publication date | Oct 13, 2020 |
| Grant date | Oct 13, 2020 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present disclosure provides a method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon includes: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon, comprising: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate, wherein the flexible substrate solution is one selected from a group consisting of polyimide (PI), acryl, polycarbonate, polyvinyl alcohol, polyacrylate, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polynorbornene and polyethersulfone (PES). 2. The method for manufacturing a flexible device of claim 1 , wherein the step of forming the pattern of the two-dimensional material comprises a step of forming a micro-pattern or a nano-pattern of the two-dimensional material through a photolithography or e-beam lithography process. 3. The method for manufacturing a flexible device of claim 1 , wherein the substrate is a metal substrate made of a transition metal. 4. The method for manufacturing a flexible device of claim 3 , wherein the substrate is a metal substrate made of copper or nickel. 5. The method for manufacturing a flexible device of claim 4 , wherein the step of removing the substrate comprises a step of removing the metal substrate comprising copper or nickel with ammonium persulfate, an aqueous FeCl 3 solution or a strong acid. 6. The method for manufacturing a flexible device of claim 1 , further comprising a thermal lamination step after the formation of the flexible substrate. 7. The method for manufacturing a flexible device of claim 1 , wherein the two-dimensional material comprises graphene or a transition metal dichalcogenide (TMD). 8. A method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon, comprising: forming a two-dimensional material layer on a substrate; patterning the two-dimensional material in a desired shape; coating a flexible substrate solution on the patterned two-dimensional material layer; and removing the substrate, wherein the flexible substrate solution is one selected from a group consisting of polyimide (PI), acryl, polycarbonate, polyvinyl alcohol, polyacrylate, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polynorbornene and polyethersulfone (PES). 9. The method for manufacturing a flexible device of claim 8 , wherein the step of patterning comprises a step of forming a micro-pattern or a nano-pattern of the two-dimensional material through a photolithography or e-beam lithography process. 10. The method for manufacturing a flexible device of claim 8 , wherein the substrate is a metal substrate made of a transition metal. 11. The method for manufacturing a flexible device of claim 10 , wherein the substrate is a metal substrate made of copper or nickel. 12. The method for manufacturing a flexible device of claim 11 , wherein the step of removing comprises a step of removing the metal substrate comprising copper or nickel with ammonium persulfate, an aqueous FeCl 3 solution or a strong acid. 13. The method for manufacturing a flexible device of claim 8 , further comprising thermal laminating after the formation of the flexible substrate. 14. The method for manufacturing a flexible device of claim 8 , wherein the two-dimensional material comprises graphene or a transition metal dichalcogenide (TMD).
Etching of wafers, substrates or parts of devices · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
being conductive materials, e.g. metallic silicides · CPC title
Carbon, e.g. diamond-like carbon · CPC title
characterised by the chemical composition · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.