Method of fabricating device including two-dimensional material

Patent metadata

Field	Value
Publication number	US-10600646-B2
Application number	US-201816120728-A
Country	US
Kind code	B2
Filing date	Sep 4, 2018
Priority date	Sep 4, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.

First claim

What is claimed is:

1. A method of fabricating a device comprising a two-dimensional (2D) material, the method comprising:
forming a material pattern on a substrate;
forming an amorphous transition metal oxide structure on the substrate and the material pattern;
replacing the amorphous transition metal oxide structure with a transition metal dichalcogenide structure,
wherein the transition metal dichalcogenide structure includes atomic layers that are substantially parallel to a surface of the transition metal dichalcogenide structure, and the transition metal dichalcogenide structure includes a first portion on a top surface of the material pattern, a second portion on a side surface of the material pattern, and a third portion on a main surface of the substrate; and
removing the first portion of the transition metal dichalcogenide structure by forming a cover layer on the transition metal dichalcogenide structure, and polishing an upper portion of the cover layer and the first portion of the transition metal dichalcogenide structure to expose the top surface of the material pattern.

2. The method of claim 1 , wherein the amorphous transition metal oxide structure includes amorphous molybdenum dioxide.

3. The method of claim 1 , wherein the replacing the amorphous transition metal oxide structure with the transition metal dichalcogenide structure includes reacting the amorphous transition metal oxide structure with a reactant containing a chalcogen-group element.

4. The method of claim 3 , wherein the reactant is sulfur vapor.

5. The method of claim 1 , wherein the atomic layers of the transition metal dichalcogenide structure are substantially parallel to a surface of the substrate.

6. The method of claim 1 ,
wherein the atomic layers of the transition metal dichalcogenide structure are substantially parallel to the top surface of the material pattern in the first portion of the transition metal dichalcogenide structure, substantially parallel to the side surface of the material pattern in the second portion of the transition metal dichalcogenide structure, and substantially parallel to the main surface of the substrate in the third portion of the transition metal dichalcogenide structure.

7. The method of claim 6 , wherein
the side surface of the material pattern is substantially perpendicular to the main surface of the substrate,
the atomic layers of the transition metal dichalcogenide structure are substantially perpendicular to the main surface of the substrate in the second portion of the transition metal dichalcogenide structure.

8. A method of fabricating a device comprising a two-dimensional (2D) material, the method comprising:
forming a recess in a substrate, the recess being depressed from a main surface of the substrate;
covering the recess of the substrate and the main surface of the substrate with a material layer;
replacing the material layer with a 2D material layer, wherein
the 2D material layer includes a first portion on a bottom surface of the recess of the substrate, a second portion on a side surface of the recess of the substrate, and a third portion on the main surface of the substrate, and
atomic layers of the second portion of the 2D material layer are substantially perpendicular to the main surface of the substrate; and
removing the third portion of the 2D material layer by forming a cover layer on the 2D material layer, and polishing an upper portion of the cover layer and the third portion of the 2D material layer to expose the main surface of the substrate.

9. The method of claim 8 , wherein the material layer includes an amorphous transition metal oxide.

10. The method of claim 8 , wherein the 2D material layer includes a transition metal dichalcogenide.

11. A method of fabricating a device comprising a two-dimensional (2D) material, the method comprising:
forming a transition metal oxide layer on a substrate;
forming a material pattern on a portion of the transition metal oxide layer; and
replacing a portion of the transition metal oxide layer, which is not covered with the material pattern, with a transition metal dichalcogenide pattern, wherein
the transition metal dichalcogenide pattern includes atomic layers that are substantially parallel to a main surface of the substrate.

12. The method of claim 11 , wherein
the replacing the portion of the transition metal oxide layer, which is not covered with the material pattern, with the transition metal dichalcogenide pattern includes providing a reactant configured to react with a transition metal oxide and generate a transition metal dichalcogenide.

13. The method of claim 12 , wherein the reactant is sulfur vapor.

14. The method of claim 11 , wherein the transition metal oxide layer includes amorphous molybdenum dioxide.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Tae-Jin
• Kim Bong-Soo
• Kim Jin-Bum
• Hwang Yoo-Sang

Classifications

• H10P14/3256

  Microstructure · CPC title

• H10P14/3242

  Structure · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2925

  Surface structures · CPC title

• H10P14/20

  of semiconductor materials · CPC title