Atomic layer deposition method

Patent metadata

Field	Value
Publication number	US-11961716-B2
Application number	US-202117546053-A
Country	US
Kind code	B2
Filing date	Dec 9, 2021
Priority date	Dec 9, 2021
Publication date	Apr 16, 2024
Grant date	Apr 16, 2024

Abstract

A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

First claim

What is claimed is:

1. An atomic layer deposition method comprising:
injecting a first precursor into a chamber along a first direction and turning on a bias power supply to attract the first precursor to a substrate;
injecting a second precursor into the chamber along a second direction perpendicular to the first direction and turning on the bias power supply to attract the second precursor to the substrate;
injecting a first inert gas into the chamber along the first direction and turning off the bias power supply to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or by-products; and
injecting a second inert gas into the chamber along the second direction and turning off the bias power supply to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

2. The deposition method according to claim 1 , wherein a first reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the second inert gas into the chamber, a second reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the first inert gas into the chamber; and
the first reaction step and the second step are alternately performed twice.

3. The deposition method according to claim 1 , wherein a first reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the second inert gas into the chamber, a second reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the first inert gas into the chamber; and
the first reaction step is performed twice, and then the second reaction step is performed twice.

4. The deposition method according to claim 1 , wherein a first reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the first inert gas into the chamber, a second reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the second inert gas into the chamber; and
the first reaction step and the second step are alternately performed twice.

5. The deposition method according to claim 1 , wherein a first reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the first inert gas into the chamber, a second reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the first inert gas into the chamber, a third reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the second inert gas into the chamber, a fourth reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the second inert gas into the chamber; and
the first reaction step to the fourth reaction step are sequentially performed.

6. The deposition method according to claim 1 , wherein a first reaction step is performed by sequentially injecting the first precursor into the chamber and injecting the first inert gas into the chamber, a second reaction step is performed by sequentially injecting the second precursor into the chamber and injecting the second inert gas into the chamber; and
the first reaction step is performed twice, and then the second reaction step is performed twice.

7. The deposition method according to claim 1 , further comprising:
generating a pumping airflow to the chamber in the first direction or the second direction to pump out the unnecessary part of the first precursor or the unnecessary part of the second precursor from the chamber.

8. The deposition method according to claim 1 , further comprising:
heating the first precursor; and
heating the second precursor.

9. The deposition method according to claim 1 , further comprising:
turning on a radio frequency power supply to accelerate a reaction of the first precursor.

Assignees

• Ind Tech Res Inst

Inventors

• Wang Hsuan-Fu
• Tung Fu-Ching
• Wang Ching-Chiun

Classifications

• H01J37/3244 Primary

  Gas supply means · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/45548

  having arrangements for gas injection at different locations of the reactor for each ALD half-reaction · CPC title

• C23C16/45565

  Shower nozzles · CPC title

• H01J37/32899 Primary

  Multiple chambers, e.g. cluster tools · CPC title