Semiconductor processing reactor and components thereof

Patent metadata

Field	Value
Publication number	US-10844486-B2
Application number	US-201916598768-A
Country	US
Kind code	B2
Filing date	Oct 10, 2019
Priority date	Apr 6, 2009
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

First claim

What is claimed is:

1. A reactor for processing a semiconductor substrate, said reactor comprising:
a diffuser, said diffuser having a diffuser volume for distributing at least one process gas, the diffuser volume having at least a first wetted surface;
a reaction chamber having a reaction space operatively connected to said diffuser volume via an inlet, said reaction chamber being in fluid communication with said diffuser through the inlet, and said reaction space having at least a second wetted surface; and
a surface texturing on said first and second wetted surfaces, said surface texturing having a surface roughness of between about 30-250 Ra.

2. The reactor of claim 1 , wherein said surface texturing has a surface roughness of about 90 Ra.

3. The reactor of claim 1 , wherein said diffuser volume forms a first volume and said reaction space forms a second volume, wherein said first and second volumes are physically separated.

4. The reactor of claim 1 , wherein said diffuser volume is defined between an upper surface of the diffuser and an upper surface of said reaction chamber, wherein said upper surface of said reaction chamber forms a lower surface of said diffuser volume.

5. The reactor of claim 4 , wherein said diffuser is directly attached to said upper surface of said reaction chamber.

6. The reactor of claim 1 , wherein said diffuser volume comprises a plurality of distribution surfaces spaced from a lower surface of said diffuser volume.

7. The reactor of claim 6 , wherein said lower surface comprises a substantially planar surface.

8. The reactor of claim 6 , wherein at least first and second distribution surfaces have a decreasing height relative to said lower surface of said diffuser volume.

9. The reactor of claim 6 , wherein at least a portion of a first distribution surface of said plurality of distribution surfaces is spaced a first distance away from said lower surface and at least a portion of a second distribution surface of said plurality of distributions surfaces is spaced a second distance away from said lower surface.

10. The reactor of claim 9 , wherein said first distance is different than said second distance.

11. The reactor of claim 6 , wherein said diffuser volume further comprises a first side surface and a second side surface extending between an upper surface defined by the plurality of distribution surfaces and the lower surface of the distribution volume.

12. The reactor of claim 11 , wherein the diffuser volume further comprises a deflecting surface extending between said upper surface, said lower surface and said first and second side surfaces.

13. The reactor of claim 12 , wherein the inlet fluidly connects the reaction space to the diffuser volume proximate to the deflecting surface of the diffuser volume.

14. The reactor of claim 11 , wherein the diffuser volume is fan-shaped.

15. The reactor of claim 14 , wherein the inlet comprises an acruate slot.

Assignees

• Asm Ip Holding Bv

Inventors

• Shero Eric James
• Verghese Mohith E
• White Carl Louis
• Terhorst Herbert
• Maurice Dan

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• Y10T137/85938

  Non-valved flow dividers · CPC title

• C23C16/45561

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/45504

  Laminar flow · CPC title