Three-dimensional memory devices and methods for forming the same

Patent metadata

Field	Value
Publication number	US-11950419-B2
Application number	US-202117231966-A
Country	US
Kind code	B2
Filing date	Apr 15, 2021
Priority date	Mar 15, 2021
Publication date	Apr 2, 2024
Grant date	Apr 2, 2024

Abstract

A three-dimensional (3D) memory device is provided. In an example, the 3D memory device includes a staircase and a plurality of groups of support structures through the staircase. The plurality of groups of support structures are arranged in a first direction, and each of the groups of support structures comprises three support structures, wherein projections of the three support structures form a triangular shape in a plane parallel to the first direction.

First claim

What is claimed is:

1. A three-dimensional (3D) memory device, comprising a staircase, a plurality of groups of support structures, and a fourth support structure between adjacent groups of support structures through the staircase, wherein:
the plurality of groups of support structures are arranged in a first direction,
each of the groups of support structures comprises three support structures, wherein projections of the three support structures form a triangular shape in a plane parallel to the first direction, and
in a second direction perpendicular to the first direction, a distance between the fourth support structure and one of the three support structures in one of the adjacent groups is greater than or equal to half of a critical dimension of the fourth support structure and less than or equal to the critical dimension of the fourth support structure.

2. The 3D memory device of claim 1 , wherein a first support structure of each of the groups are aligned in the first direction.

3. The 3D memory device of claim 2 , wherein a second support structure and a third support structure of each of the groups are aligned in the first direction.

4. The 3D memory device of claim 1 , wherein a distance between two farthest support structures in each of the groups is in a range of about 350 to about 500 nm.

5. The 3D memory device of claim 4 , wherein a minimum distance between the two support structures in each of the groups is in a range of about 300 nm to about 400 nm.

6. The 3D memory device of claim 1 , further comprising a plurality of contacts each surrounded by a respective group, wherein the plurality of contacts are aligned in the first direction and away from each of the support structures in the respective group.

7. The 3D memory device of claim 6 , wherein a distance between each of the contacts to a support structure in the group is in a range of about 150 nm to about 300 nm.

8. The 3D memory device of claim 1 , wherein the triangular shape comprises an isosceles shape.

9. The 3D memory device of claim 1 , wherein, in the first direction, another distance between the fourth support structure and one of the three support structures in one of the adjacent groups is greater than or equal to 1.5 times the critical dimension of the fourth support structure and less than or equal to 2 times the critical dimension of the fourth support structure.

10. The 3D memory device of claim 1 , wherein the first direction is a direction in which a gate-line slit extends.

11. The 3D memory device of claim 10 , wherein the plurality of groups of support structures are arranged in a pair of rows in the first direction between two adjacent gate-line slits.

12. The 3D memory device of claim 1 , wherein the plurality of groups of support structures are arranged a first finger and a second finger adjacent to the first finger, and each of the three support structures in a respective group in the first finger is aligned with a corresponding support structure in another group in the second finger in a second direction perpendicular to the first direction.

13. A three-dimensional (3D) memory device, comprising:
a plurality of contacts aligned in a row in a first direction on a staircase;
a plurality of groups of support structures aligned in a plurality of rows in the first direction; and
a fourth support structure between adjacent groups of support structures, wherein:
the row of the contacts and the plurality of rows of the support structures are apart from one another in a second direction perpendicular to the first direction;
each of the contacts is surrounded by a group of support structures;
the group of support structures comprises three support structures, wherein projections of the three support structures form a triangular shape in a plane parallel to the first direction; and
in the first direction, a distance between the fourth support structure and one of the three support structures in one of the adjacent groups is greater than or equal to 1.5 times a critical dimension of the fourth support structure and less than or equal to 2 times the critical dimension of the fourth support structure.

14. The 3D memory device of claim 13 , wherein
a first support structure in each group of support structures is located in one of two adjacent rows of support structures; and
a second support structure and a third support structure in each group of support structures are located in another one of the two adjacent rows of support structures.

15. The 3D memory device of claim 13 , wherein a minimum distance between each of the contacts to a support structure in the group is in a range of about 150 nm to about 300 nm.

16. The 3D memory device of claim 13 , wherein a distance between two farthest support structures in each of the groups is in a range of about 350 to about 500 nm.

17. The 3D memory device of claim 14 , further comprising a fourth support structure between adjacent groups of support structures, wherein, in a second direction perpendicular to the first direction, a distance between the fourth support structure and each of the three support structures in the respective group is greater than or equal to half of a critical dimension of the fourth support structure and less than or equal to the critical dimension of the fourth support structure.

18. A method for forming a three-dimensional (3D) memory device, comprising:
forming a stack structure of a plurality of first layers and a plurality of second layers interleaved above a substrate;
forming a staircase in a staircase region of the stack structure, the staircase comprising a plurality of stairs;
forming a plurality of groups of support structures in the staircase; and
forming a contact on a respective one of the stairs; and
forming a fourth support structure between adjacent groups of support structures, wherein
the plurality of groups of support structures each comprises three support structures, wherein projections of the three support structures form a triangular shape in a plane parallel to a first direction, and
in a second direction perpendicular to the first direction, a distance between the fourth support structure and one of the three support structures in one of the adjacent groups is greater than or equal to half of a critical dimension of the fourth support structure and less than or equal to the critical dimension of the fourth support structure.

19. The method of claim 18 , wherein
the plurality of contacts are aligned in a row in the first direction;
a plurality of support structures are arranged in a plurality of rows in the first direction; and
the row of the contacts and the plurality of rows of the support structures are apart from one another in a second direction perpendicular to the first direction.

Assignees

• Yangtze Memory Tech Co Ltd

Inventors

• Xu Zongke
• Yuan Bin
• Wang Xiangning
• Zhang Qiangwei

Classifications

• H10B43/27 Primary

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10B41/10

  characterised by the top-view layout · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10B41/35

  with a cell select transistor, e.g. NAND · CPC title

• H10B43/10 Primary

  characterised by the top-view layout · CPC title