Method for predicting resist deformation

US11914942B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11914942-B2
Application numberUS-202318206029-A
CountryUS
Kind codeB2
Filing dateJun 5, 2023
Priority dateDec 31, 2018
Publication dateFeb 27, 2024
Grant dateFeb 27, 2024

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  1. Title

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  2. Abstract

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Abstract

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A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

First claim

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The invention claimed is: 1. A method comprising: inputting, into a resist deformation model, pattern information relating to a pattern to be formed in a patterning process, the model configured to simulate deformation of a portion of a resist, the portion comprising a boundary liquid layer located at a boundary between a developed or open region in the resist and a region of the resist at least partly surrounding the developed or open region, wherein the model is configured to determine a first deformation component of the boundary liquid layer caused by fluid flow of the boundary liquid layer and a second deformation component of the boundary liquid layer caused by the fluid flow of the boundary liquid layer; and evaluating, by a hardware processor system, the resist deformation model with the inputted pattern information to determine a deformation of the pattern to be formed in the resist, wherein the deformation comprises a combination of the first deformation component and the second deformation component of the boundary liquid layer. 2. The method of claim 1 , wherein the boundary liquid layer has a thickness smaller than a length of the developed or open region in the resist at the boundary. 3. The method of claim 1 , wherein the first deformation component is determined in a horizontal plane based on a horizontal component of a flow rate of the boundary liquid layer and the second deformation is determined in the horizontal plane based on a vertical component of the flow rate of the boundary liquid layer. 4. The method of claim 1 , wherein the model has defined therein, a boundary condition comprising a velocity gradient approximately equal to zero at a surface of the boundary liquid layer, the surface being opposite of the developed or open region. 5. The method of claim 1 , wherein the model has defined therein, a boundary condition comprising a velocity approximately equal to zero at a surface of the boundary liquid layer at the developed or open region. 6. The method of claim 1 , wherein the model has defined therein, a velocity as a function of thickness of the boundary liquid layer and a pressure gradient across a thickness of the boundary liquid layer. 7. The method of claim 6 , wherein the model has defined therein, the flow rate of the boundary liquid layer as a function of an integration of the velocity over the thickness of the boundary liquid layer. 8. The method of claim 1 , wherein the model has defined therein, the deformation as a function of the flow rate of the boundary liquid layer. 9. The method of claim 1 , wherein the evaluating comprises: determination of the first deformation component in a first plane caused by a horizontal component of a flow rate of the boundary liquid layer; and determination of a final deformation in the first plane by adjusting the first deformation component based on a vertical component of the flow rate of the boundary liquid layer in a second plane, the second plane perpendicular to the first plane. 10. The method of claim 1 , wherein the evaluating further comprises: definition of a plurality of vertices along a contour of the developed or open region in the resist; determination of a capillary force at a given vertex along the contour; and redistribution of the vertices such that (i) a volume of the developed or open region in the resist is conserved, and (ii) a volume of the boundary liquid layer is conserved. 11. The method of claim 10 , wherein the redistribution of the vertices comprises: determination of a time scale based on a horizontal component of a flow rate of the boundary liquid layer; and movement, based on the time scale and the flow rate of the boundary layer, the plurality of vertices. 12. The method of claim 10 , further comprising: determining a rate of change of a thickness of the boundary liquid layer based on the flow rate of the boundary layer; and adjusting, based on the redistributed vertices, another plurality of vertices along a surface of the boundary liquid layer based on the rate of change of thickness of the boundary liquid layer. 13. The method of claim 1 , wherein the model is a thin-film model simplified based on a lubrication approximation, wherein the lubrication approximation comprises a vertical shear stress value of zero. 14. A non-transitory computer program product comprising machine-readable instructions stored therein, the instructions, when executed by one or more processors, configured to cause the one or more processors to at least perform the method of claim 1 . 15. A method comprising: inputting, into a resist deformation model, pattern information relating to a pattern to be formed in a patterning process, the model configured to simulate deformation of a portion of a resist, the portion comprising a boundary liquid layer located at a boundary between a developed or open region in the resist and a region of the resist at least partly surrounding the developed or open region, wherein the model is configured to determine a deformation of the boundary liquid layer caused by a horizontal fluid flow of the boundary liquid layer; and determining, by a hardware computer system, a deformation of the pattern to be formed in the resist by simulation using the resist deformation model based on the input pattern information. 16. The method of claim 15 , wherein the model is further configured to determine a deformation of the boundary liquid layer caused by a vertical fluid flow of the boundary liquid layer. 17. The method of claim 15 , wherein the boundary liquid layer has a thickness smaller than a length of the developed or open region in the resist at the boundary. 18. The method of claim 15 , wherein the model has defined therein, a boundary condition comprising a velocity gradient approximately equal to zero at a surface of the boundary liquid layer, the surface being opposite of the developed or open region. 19. The method of claim 15 , wherein the model has defined therein, a boundary condition comprising a velocity approximately equal to zero at a surface of the boundary liquid layer at the developed or open region. 20. A non-transitory computer program product comprising machine-readable instructions stored therein, the instructions, when executed by one or more processors, configured to cause the one or more processors to at least perform the method of claim 15 .

Assignees

Inventors

Classifications

  • Manufacturability analysis or optimisation for manufacturability · CPC title

  • Numerical modelling · CPC title

  • G06F30/398Primary

    Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

  • using simulation · CPC title

  • using fluid dynamics, e.g. using Navier-Stokes equations or computational fluid dynamics [CFD] · CPC title

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What does patent US11914942B2 cover?
A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a r…
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G06F30/398. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Feb 27 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).