Light emitting device and electronic device

Patent metadata

Field	Value
Publication number	US-11908976-B2
Application number	US-202318096691-A
Country	US
Kind code	B2
Filing date	Jan 13, 2023
Priority date	Jul 10, 2008
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

First claim

The invention claimed is:

1. A light emitting device comprising:
a first structure body and a second structure body in which a fibrous body is impregnated with an organic resin; and
a transistor and a light emitting element electrically connected to the transistor, the transistor and the light emitting element being provided between the first structure body and the second structure body,
wherein a channel formation region of the transistor comprises a semiconductor layer,
wherein the semiconductor layer and an electrode of the light emitting element are electrically connected to each other via a first conductive layer and a second conductive layer,
wherein the first conductive layer is configured to function as one of a source electrode and a drain electrode of the transistor,
wherein a third conductive layer overlaps with the channel formation region of the transistor,
wherein the second conductive layer and the third conductive layer comprise a same material,
wherein the first structure body and the second structure body are adhered to each other in an edge portion so as to seal the transistor and the light emitting element, and
wherein at least one of the first structure body and the second structure body has a thickness of greater than or equal to 5 μm and less than or equal to 50 μm.

2. A light emitting device comprising:
a first layer comprising an organic resin;
a second layer comprising an organic resin; and
a transistor and a light emitting element electrically connected to the transistor, the transistor and the light emitting element being sealed between the first layer and the second layer,
wherein a channel formation region of the transistor comprises a semiconductor layer,
wherein the semiconductor layer has a thickness of greater than or equal to 20 nm and less than or equal to 70 nm,
wherein the semiconductor layer and an electrode of the light emitting element are electrically connected to each other via a first conductive layer and a second conductive layer,
wherein the first conductive layer is configured to function as one of a source electrode and a drain electrode of the transistor,
wherein a third conductive layer overlaps with the channel formation region of the transistor,
wherein the second conductive layer and the third conductive layer comprise a same material, and
wherein at least one of the first layer and the second layer has a thickness of greater than or equal to 3 μm and less than or equal to 15 μm.

3. A light emitting device comprising:
a first layer comprising an organic resin;
a second layer comprising an organic resin;
a transistor and a light emitting element electrically connected to the transistor, the transistor and the light emitting element being sealed between the first layer and the second layer; and
a film having elasticity provided over a surface of the first layer which faces away from the transistor,
wherein a channel formation region of the transistor comprises a semiconductor layer,
wherein the semiconductor layer and an electrode of the light emitting element are electrically connected to each other via a first conductive layer and a second conductive layer,
wherein the first conductive layer is configured to function as one of a source electrode and a drain electrode of the transistor,
wherein the first conductive layer comprises a region in contact with the semiconductor layer,
wherein a third conductive layer overlaps with the channel formation region of the transistor,
wherein the second conductive layer comprises a region in contact with the first conductive layer and a region in contact with the electrode of the light emitting element, and
wherein the second conductive layer and the third conductive layer comprise a same material.

4. The light emitting device according to claim 2 ,
wherein the transistor and the light emitting element are provided over the first layer,
wherein the second layer is provided over the transistor and the light emitting element, and
wherein the second layer comprises silicon nitride.

5. The light emitting device according to claim 3 ,
wherein the transistor and the light emitting element are provided over the first layer,
wherein the second layer is provided over the transistor and the light emitting element, and
wherein the second layer comprises silicon nitride.

6. The light emitting device according to claim 1 ,
wherein the organic resin comprises one selected from a group comprising an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, a cyanate resin, a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

7. The light emitting device according to claim 2 ,
wherein the organic resin in the first layer and the organic resin in the second layer each comprise one selected from a group comprising an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, a cyanate resin, a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

8. The light emitting device according to claim 3 ,
wherein the organic resin in the first layer and the organic resin in the second layer each comprise one selected from a group comprising an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, a cyanate resin, a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

9. The light emitting device according to claim 1 , wherein the semiconductor layer comprises polycrystalline silicon.

10. The light emitting device according to claim 2 , wherein the semiconductor layer comprises polycrystalline silicon.

11. The light emitting device according to claim 3 , wherein the semiconductor layer comprises polycrystalline silicon.

12. The light emitting device according to claim 1 , further comprising:
an impact relief layer provided over a surface of the first structure body which faces away from the transistor.

13. The light emitting device according to claim 2 , further comprising:
an impact relief layer provided over a surface of the first layer which faces away from the transistor.

14. The light emitting device according to claim 3 ,
wherein the film having elasticity is an impact relief layer, and
wherein at least one of the first layer and the second layer has a thickness of greater than or equal to 3 μm and less than or equal to 15 μm.

Assignees

• Semiconductor Energy Lab

Inventors

• Oikawa Yoshiaki
• Eguchi Shingo
• Mashiyama Mitsuo
• Kataniwa Masatoshi
• Shoji Hironobu
• Nakada Masataka
• Seo Satoshi

Classifications

• H05B33/04

  Sealing arrangements {, e.g. against humidity} · CPC title

• H10K59/873

  Encapsulations · CPC title

• H10K59/871 Primary

  Self-supporting sealing arrangements · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10K71/80 Primary

  using temporary substrates · CPC title