Semiconductor Device and Method of Forming Sacrificial Protective Layer to Protect Semiconductor Die Edge During Singulation
US-2017098612-A1 · Apr 6, 2017 · US
US11908699B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11908699-B2 |
| Application number | US-202217660477-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2022 |
| Priority date | Sep 17, 2015 |
| Publication date | Feb 20, 2024 |
| Grant date | Feb 20, 2024 |
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Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.
Opening claim text (preview).
What is claimed is: 1. A semiconductor package comprising: a semiconductor die comprising a first side and a second side opposite the first side; a cavity extending into the second side of the semiconductor die and only partially through the semiconductor die; a backmetal coupled within the cavity and directly coupled to an entirety of the second side; and an organic material coupled over the first side of the semiconductor die and over a plurality of sidewalls of the semiconductor die; wherein a first portion of the first side directly opposite the cavity is coplanar with a second portion of the first side at an outer edge of the first side. 2. The semiconductor package of claim 1 , wherein the organic material further comprises a die support structure. 3. The semiconductor package of claim 1 , wherein multiple surfaces of the backmetal form multiple outer surfaces of the semiconductor package. 4. The semiconductor package of claim 2 , wherein the organic material comprises a temporary die support structure. 5. The semiconductor package of claim 1 , further comprising one or more electrical contacts exposed through one or more openings in the organic material. 6. The semiconductor package of claim 1 , wherein a thinned portion of the semiconductor die is less than 5 microns thick. 7. A semiconductor package comprising: a semiconductor die comprising a first side and a second side opposite the first side; a cavity extending into the second side of the semiconductor die and only partially through the semiconductor die; a backmetal coupled within the cavity; and an organic material coupled over the first side of the semiconductor die and over an entirety of each sidewall of a plurality of sidewalls of the semiconductor die; wherein an outer perimeter of the backmetal is a same size and shape as an outermost perimeter of the semiconductor die; and wherein an entirety of the first side lies in a same plane and extends to the outermost perimeter of the semiconductor die. 8. The semiconductor package of claim 7 , wherein the organic material is directly coupled to the backmetal. 9. The semiconductor package of claim 7 , wherein the organic material further comprises a die support structure. 10. The semiconductor package of claim 7 , wherein a largest planar surface of the second side of the semiconductor die is within the cavity. 11. The semiconductor package of claim 7 , wherein a thinned portion of the semiconductor die is less than five microns thick. 12. The semiconductor package of claim 7 , further comprising one or more electrical contacts exposed through one or more openings in the organic material. 13. The semiconductor package of claim 7 , further comprising a conductive material coupled within the cavity.
Cutting or separating of wafers, substrates or parts of devices · CPC title
batch processes · CPC title
Subject matter not provided for in other groups of this subclass · CPC title
the encapsulations being on at least the sidewalls of the semiconductor body · CPC title
using moulds · CPC title
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