Techniques to engineer nanoscale patterned features using ions

Patent metadata

Field	Value
Publication number	US-11908691-B2
Application number	US-202217951758-A
Country	US
Kind code	B2
Filing date	Sep 23, 2022
Priority date	Jun 25, 2015
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.

First claim

What is claimed is:

1. A method of enhancing lithographic patterning of a substrate, comprising:
providing a layer on the substrate, the substrate defining a substrate plane, the layer comprising a plurality of trenches, isolated from one another, the plurality of trenches defining a first spacing that is larger than a target spacing; and
performing a directional ion etch to selectively etch the plurality of trenches along a first direction with respect to a second direction within the substrate plane, wherein the directional ion etch etches an entire thickness of the layer, wherein the plurality of trenches define a second spacing, equal to the target spacing, after the performing the directional ion etch.

2. The method of claim 1 , wherein the performing the directional ion etch comprises directing ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane.

3. The method of claim 1 , wherein the layer is a first layer, the method further comprising: after the directional ion etch performing a transfer etch to transfer the plurality of trenches into a second layer, subjacent the first layer, wherein the transfer etch takes place in a vertical direction along a perpendicular to the substrate plane.

4. The method of claim 1 , wherein a position of the plurality of trenches is not shifted after the directional ion etch.

5. The method of claim 1 , wherein a position of the plurality of trenches is shifted after the directional ion etch.

6. The method of claim 1 , wherein the layer is a first layer, and wherein the directional ion etch selectively etches the first layer with respect to a second layer, subjacent the first layer.

7. The method of claim 1 , wherein the performing the directional ion etch comprises directing a ribbon beam to the substrate, the ribbon beam having a short axis parallel to the first direction, and having a long axis extending along the second direction.

Assignees

• Varian Semiconductor Equipment Ass Inc
• Applied Materials Inc

Inventors

• Ruffell Simon
• Hautala John
• Brand Adam
• Dai Huixiong

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• H10P50/283

  by chemical means · CPC title