Techniques for manipulating patterned features using ions

Patent metadata

Field	Value
Publication number	US-9984889-B2
Application number	US-201615142526-A
Country	US
Kind code	B2
Filing date	Apr 29, 2016
Priority date	Mar 8, 2016
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.

First claim

What is claimed is:

1. A method, comprising:
providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane;
depositing a layer comprising a layer material on the surface feature; and
directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane,
wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact the layer on a first sidewall portion of the surface feature, the first sidewall portion extending perpendicularly to the substrate plane, and do not impact the layer on a second sidewall portion of the surface feature, the second sidewall portion extending perpendicularly to the substrate plane and along the first direction, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.

2. The method of claim 1 , wherein the substrate feature comprises a cavity, the cavity comprising a first dimension along the first direction and a second dimension along a second direction perpendicular to the first direction, and wherein the depositing the layer comprises performing a shrink of the cavity wherein the first dimension and second dimension are reduced.

3. The method of claim 2 , wherein the ion exposure comprises etching the layer along the first direction a first amount and etching the layer along the second direction a second amount, the second amount being less than the first amount.

4. The method of claim 3 , wherein the cavity comprises a circular shape before the ion exposure and comprises an elongated shape after the ion exposure.

5. The method of claim 3 , wherein the layer material is removed from a bottom surface of the cavity after the etching.

6. The method of claim 3 , wherein the cavity is formed within a substrate material before the ion exposure, and wherein the ion exposure comprises etching the substrate material along the first direction to form an elongated shape, wherein the elongated shape comprises a third dimension along the first direction, the third dimension being greater than the first dimension.

7. The method of claim 3 , wherein the cavity comprises a trench before the depositing the layer, wherein the first dimension is greater than the second dimension, and wherein after the depositing the layer and after the ion exposure, the trench comprises a third dimension along the second direction, the third dimension being less than the first dimension, and further comprises the first dimension along the first direction.

8. The method of claim 3 , wherein the cavity comprises a trench before the depositing the layer, wherein the first dimension is greater than the second dimension, and wherein after the depositing the layer and after the ion exposure, the trench comprises a third dimension along the second direction, the third dimension being less than the first dimension, and further comprises a fourth dimension along the first direction, the fourth dimension being greater than the first dimension.

9. The method of claim 3 , wherein a location of the cavity is shifted from a first location within the substrate before the depositing the layer to a second location within the substrate after the ion exposure, wherein the first sidewall portion comprises a cavity sidewall of the cavity, and wherein the location of the cavity is shifted by etching the cavity sidewall along the first direction.

10. The method of claim 9 , wherein after the depositing the layer and the ion exposure a dimension of the cavity is reduced along the second direction, and wherein the first dimension along the first direction is not altered.

11. The method of claim 9 , wherein after the depositing the layer and the ion exposure a dimension of the cavity is reduced along the second direction, and wherein the first dimension along the first direction is increased.

12. The method of claim 1 , wherein the surface feature extends above the substrate plane, wherein before the depositing the layer the surface feature comprises a first feature dimension along the first direction and a second feature dimension along a second direction perpendicular to the first direction, and wherein the depositing the layer comprises increasing the first feature dimension to a third feature dimension and increasing the second feature dimension to a fourth feature dimension, and wherein the ion exposure comprises decreasing the third feature dimension to a fifth feature dimension less than the fourth feature dimension.

13. The method of claim 1 , wherein the ions are directed as a ribbon ion beam and have trajectories parallel to the first direction.

14. The method of claim 1 , the depositing the layer comprising selectively depositing the layer on the substrate, wherein the layer comprises a first thickness over a first region of the substrate and comprises a second thickness different from the first thickness over a second region of the substrate, wherein after the depositing the layer, a dimension of the surface feature along the first direction is altered by a first amount in the first region and by a second amount in the second region.

15. A method of processing a substrate, comprising:
providing a cavity in the substrate, the cavity having a first dimension along a first direction within a substrate plane and a second dimension along a second direction within the substrate plane, the second direction being perpendicular to the first direction;
depositing a layer comprising a layer material within the cavity; and
directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane,
wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first sidewall portion of the cavity, the first sidewall portion extending perpendicularly to the substrate plane, and do not impact a second sidewall portion of the cavity, the second sidewall portion extending perpendicularly to the substrate plane and along the first direction, and wherein the first dimension is selectively altered with respect to the second dimension.

16. The method of claim 15 , wherein the first dimension is reduced while the second dimension is not reduced.

17. A method of processing a substrate, comprising:
providing a cavity in the substrate, the cavity disposed at a first cavity location within the substrate;
depositing a layer comprising a layer material within the cavity; and
directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane,
wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first sidewall portion of the cavity, the first sidewall portion extending perpendicularly to the substrate plane, and do not impact a second portion of the cavity, the second sidewall portion extending perpendicularly to the substrate plane and along the first direction, and wherein the cavity is disposed at a second cavity location in the substrate aft

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Ruffell Simon
• Dai Huixiong
• Lang Jun
• Hautala John

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/076

  in via holes or trenches · CPC title