Semiconductor power module

Patent metadata

Field	Value
Publication number	US-11901340-B2
Application number	US-202318165056-A
Country	US
Kind code	B2
Filing date	Feb 6, 2023
Priority date	Jun 1, 2016
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

First claim

The invention claimed is:

1. A semiconductor power module comprising;
an insulating substrate having one surface and another surface;
a supporting substrate having a face-surface which faces the one surface of the insulating substrate;
a first switching device, a second switching device and an output side terminal which are arranged on the face-surface of the supporting substrate;
a first power supply terminal arranged on the one surface of the insulating substrate;
a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged on the another surface side of the insulating substrate; and
a resin covering a part of the output side terminal, the first power supply terminal and the second power supply terminal,
wherein the first power supply terminal, the first switching device and the output side terminal are electrically connected via a conductor pattern formed on the one surface of the insulating substrate and a conductor pattern formed on the face-surface of the supporting substrate,
the second power supply terminal, the second switching device and the output side terminal are electrically connected via a conductor pattern formed on the another surface of the insulating substrate,
the first power supply terminal and the second power supply terminal which are exposed from the resin are placed with distances from a peripheral edge of the insulating substrate exposed from the resin, and
a direction of a current flowing through the first power supply terminal and a direction of a current flowing through the second power supply terminal are made opposite across the insulating substrate.

2. The semiconductor power module according to claim 1 , wherein the insulating substrate has a removed region by which heat generated from the first switching device and the second switching device arranged on the face-surface of the supporting substrate is dissipated to the another side of the insulating substrate.

3. The semiconductor power module according to claim 1 , wherein a distance between a peripheral edge of the first power supply terminal exposed from the resin and a peripheral edge of the second power supply terminal exposed from the resin is set to not less than 2 mm by the insulating substrate with which exposed from the resin.

4. The semiconductor power module according to claim 1 , wherein a half-bridge circuit is formed by the output side terminal, the first power supply terminal, the second power supply terminal, the first switching device, and the second switching device.

5. The semiconductor power module according to claim 1 , wherein the first power supply terminal is a high voltage side terminal and the second power supply terminal is a low voltage side terminal to which a voltage lower than the voltage applied to the first power supply terminal is to be applied.

6. The semiconductor power module according to claim 1 , wherein the insulating substrate has a thickness of not more than 5 mm.

7. The semiconductor power module according to claim 1 , wherein the first switching devices and the second switching devices are arranged on the face-surface of the supporting substrate respectively.

8. The semiconductor power module according to claim 1 , wherein the output side terminal is arranged at a position facing the first power supply terminal and the second power supply terminal across the resin in plan view.

9. The semiconductor power module according to claim 1 , wherein the output side terminal has a thickness greater than a thickness of the first power supply terminal or a thickness of the second power supply terminal.

10. The semiconductor power module according to claim 9 , wherein the output side terminal has a thickness not less than a total value of a thickness of the first power supply terminal and a thickness of the second power supply terminal.

11. The semiconductor power module according to claim 8 , further comprising:
a first control terminal driving and controlling the first switching device; and
a second control terminal driving and controlling the second switching device,
wherein the resin covers the insulating substrate so as to selectively expose the first control terminal and the second control terminal.

12. The semiconductor power module according to claim 11 , wherein the first control terminal and the second control terminal are exposed from the resin in a direction different from a direction in which the output side terminal is exposed from the resin and a direction in which the first power supply terminal and the second power supply terminal are exposed from the resin.

13. The semiconductor power module according to claim 1 , wherein the first switching device and the second switching device includes a MISFET, an IGBT, or a BJT.

14. The semiconductor power module according to claim 13 , wherein the MISFET, the IGBT, or the BJT is formed in a Si substrate, a SiC substrate, or a wide band gap type semiconductor substrate.

15. The semiconductor power module according to claim 1 , wherein a voltage of not less than 500 V and not more than 2000 V is applied between the first power supply terminal and the second power supply terminal.

16. The semiconductor power module according to claim 1 , wherein at least one of the first power supply terminal and the second power supply terminal exposed from the resin is arranged on the insulating substrate with which is smaller than the peripheral edge of the insulating substrate exposed from the resin.

Assignees

• Rohm Co Ltd

Inventors

• Hayashi Kenji
• Hayashiguchi Masashi

Classifications

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title