Semiconductor power module

Patent metadata

Field	Value
Publication number	US-10950582-B2
Application number	US-202016793753-A
Country	US
Kind code	B2
Filing date	Feb 18, 2020
Priority date	Jun 1, 2016
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

First claim

The invention claimed is:

1. A semiconductor power module comprising:
an insulating substrate having one surface and the other surface;
an output terminal arranged at the one surface side of the insulating substrate;
a first power supply terminal arranged at the one surface side of the insulating substrate;
a second power supply terminal to which a terminal voltage of 500 V or more is to be applied between the first power supply terminal and the second power supply terminal, and that is arranged at the other surface side of the insulating substrate such as to cancel out at least a part of a magnetic field generated from the first power supply terminal; and
a switching device that is arranged at the one surface side of the insulating substrate such as to electrically connected to the output terminal, and to which at least a part of the terminal voltage is to be applied.

2. The semiconductor power module according to claim 1 ,
wherein a direction of a current flowing through the first power supply terminal and a direction of a current flowing through the second power supply terminal are made opposite across the insulating substrate.

3. The semiconductor power module according to claim 1 ,
wherein the first power supply terminal is a high voltage side terminal, and
the second power supply terminal is a low voltage side terminal.

4. The semiconductor power module according to claim 1 ,
wherein the output terminal has a thickness greater than a thickness of the first power supply terminal or a thickness of the second power supply terminal.

5. The semiconductor power module according to claim 1 ,
wherein the output terminal has a thickness not less than a total value of a thickness of the first power supply terminal and a thickness of the second power supply terminal.

6. The semiconductor power module according to claim 1 ,
wherein the insulating substrate has a removed region exposing the switching device as viewed in plane.

7. The semiconductor power module according to claim 1 ,
wherein the insulating substrate has a thickness of 5 mm or less.

8. The semiconductor power module according to claim 1 , further comprising:
a supporting substrate that is arranged at the one surface side of the insulating substrate, that has an opposing surface facing the one surface of the insulating substrate, and that supports the switching device with the opposing surface.

9. The semiconductor power module according to claim 8 , further comprising:
a heat dissipation member arranged at an opposite surface side to the opposing surface of the supporting substrate.

10. The semiconductor power module according to claim 1 , further comprising:
a resin selectively covering the insulating substrate, the output terminal, the first power supply terminal and the second power supply terminal such as to partially expose the first power supply terminal and the second power supply terminal together with the insulating substrate.

11. The semiconductor power module according to claim 10 ,
wherein the output terminal is arranged at a position facing the first power supply terminal and the second power supply terminal across the resin as viewed in plane.

12. The semiconductor power module according to claim 1 ,
wherein the first power supply terminal is arranged at a distance from a peripheral edge of the insulating substrate, and
the second power supply terminal is arranged at a distance from a peripheral edge of the insulating substrate.

13. The semiconductor power module according to claim 12 ,
wherein the distance between the first power supply terminal and the peripheral edge of the insulating substrate is 2 mm or more, and
the distance between the second power supply terminal and the peripheral edge of the insulating substrate is 2 mm or more.

14. The semiconductor power module according to claim 1 ,
wherein a plurality of the switching devices are arranged.

15. The semiconductor power module according to claim 14 ,
wherein the switching devices includes
a first switching device electrically connected to the output terminal and the first power supply terminal, and
a second switching device electrically connected to the output terminal and the second power supply terminal.

16. The semiconductor power module according to claim 15 ,
the first switching device includes a pair of first main electrodes and a first control electrode by which a current flowing between the pair of first main electrodes is to be controlled, and
the second switching device includes a pair of second main electrodes and a second control electrode by which a current flowing between the pair of second main electrodes is to be controlled.

17. The semiconductor power module according to claim 16 , further comprising:
a first control terminal electrically connected to the first control electrode; and
a second control terminal electrically connected to the second control electrode.

18. The semiconductor power module according to claim 17 , further comprising:
a resin selectively covering the insulating substrate, the output terminal, the first power supply terminal, the second power supply terminal, the first control terminal and the second control terminal such as to partially expose the first power supply terminal and the second power supply terminal together with the insulating substrate.

19. The semiconductor power module according to claim 18 ,
wherein the output terminal is arranged at a position facing the first power supply terminal and the second power supply terminal across the resin as viewed in plane.

20. The semiconductor power module according to claim 18 ,
wherein the output terminal is exposed from the resin in a direction different from directions in which the first power supply terminal and the second power supply terminal are exposed from the resin.

21. The semiconductor power module according to claim 18 ,
wherein the first power supply terminal and the second power supply terminal are exposed from the resin in directions different from directions in which the first control terminal and the second control terminal are exposed from the resin.

22. The semiconductor power module according to claim 15 ,
wherein a plurality of the first switching devices and a plurality of the second switching devices are arranged.

23. The semiconductor power module according to claim 15 ,
wherein a half-bridge circuit is configured by the output terminal, the first power supply terminal, the second power supply terminal, the first switching device, and the second switching device.

24. The semiconductor power module according to claim 1 ,
wherein the switching device includes a MISFET, an IGBT or a BJT.

25. The semiconductor power module according to claim 24 ,
wherein the MISFET, the IGBT or the BJT is formed in an Si substrate or a wide bandgap semiconductor substrate.

Assignees

• Rohm Co Ltd

Inventors

• Hayashi Kenji
• Hayashiguchi Masashi

Classifications

• H02M7/48

  using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title