Semiconductor device with stacked terminals
US-10304770-B2 · May 28, 2019 · US
Semiconductor power module
US10600764B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10600764-B2 |
| Application number | US-201716301544-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2017 |
| Priority date | Jun 1, 2016 |
| Publication date | Mar 24, 2020 |
| Grant date | Mar 24, 2020 |
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- Title
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- Abstract
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- First independent claim
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Abstract
Official abstract text for this publication.
A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor power module comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal; and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal; wherein a direction of a current flowing through the first power supply terminal and a direction of a current flowing through the second power supply terminal are made opposite across the insulating substrate. 2. The semiconductor power module according to claim 1 , wherein a half-bridge circuit is formed by the output side terminal, the first power supply terminal, the second power supply terminal, the first switching device, and the second switching device. 3. The semiconductor power module according to claim 1 , wherein the first power supply terminal is a high voltage side terminal and the second power supply terminal is a low voltage side terminal to which a voltage lower than the voltage applied to the first power supply terminal is to be applied. 4. A semiconductor power module comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal; and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal; wherein the insulating substrate has a removed region by which heat generated from the first switching device and the second switching device is dissipated from the one surface side to the other surface side of the insulating substrate. 5. A semiconductor power module comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal; a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal; and a supporting substrate facing the one surface of the insulating substrate and having a front surface supporting the first switching device and the second switching device, and arranged across an interval from the insulating substrate to the one surface side of the insulating substrate. 6. The semiconductor power module according to claim 5 , wherein the supporting substrate has a rear surface positioned at an opposite side of the front surface and a heat dissipation member is arranged at the rear surface of the supporting substrate. 7. The semiconductor power module according to claim 1 , wherein the insulating substrate has a thickness of not more than 5 mm. 8. A semiconductor power module according to claim 1 , comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal; and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal; wherein the output side terminal has a thickness greater than a thickness of the first power supply terminal or a thickness of the second power supply terminal. 9. A semiconductor power module comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal; and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal; wherein the output side terminal has a thickness not less than a total value of a thickness of the first power supply terminal and a thickness of the second power supply terminal. 10. The semiconductor power module according to claim 1 , wherein the first switching devices are arranged at the one surface side of the insulating substrate and the second switching devices are arranged at the one surface side of the insulating substrate. 11. A semiconductor power module comprising: an insulating substrate having one surface and another surface; an output side terminal arranged at a one surface side of the insulating substrate; a first power supply terminal arranged at the one surface side of the insulating substrate; a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate; a first switching device arranged at the one surface side of the insulating
Assignees
Inventors
Classifications
using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title
Electricity · mapped topic
Electricity · mapped topic
- H01L25/07Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10600764B2 cover?
- A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power s…
- Who is the assignee on this patent?
- Rohm Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L25/07. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).