Semiconductor power module

Patent metadata

Field	Value
Publication number	US-11600602-B2
Application number	US-202117173935-A
Country	US
Kind code	B2
Filing date	Feb 11, 2021
Priority date	Jun 1, 2016
Publication date	Mar 7, 2023
Grant date	Mar 7, 2023

Abstract

A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

First claim

The invention claimed is:

1. A semiconductor power module comprising:
an insulating substrate of a thickness of 5 mm or less having one surface and the other surface;
a first power supply terminal arranged at the one surface side of the insulating substrate;
a second power supply terminal arranged at the other surface side of the insulating substrate such as to cancel out at least a part of a magnetic field generated from the first power supply terminal; and
a switching device that is arranged at the one surface side of the insulating substrate, and to which at least a part of a terminal voltage between the first power supply terminal and the second power supply terminal is to be applied,
wherein the switching device includes a first switching device and a second switching device that configures a half-bridge circuit with the first switching device,
and the semiconductor power module further comprising:
an output terminal that is electrically connected to a node between the first switching device and the second switching device and that has a thickness greater than a thickness of the first terminal or a thickness of the second terminal;
a resin selectively covering the insulating substrate, the first power supply terminal, the second power supply terminal and the output terminal such as to partially expose the insulating substrate, the first power supply terminal, the second power supply terminal and the output terminal;
a first control terminal controlling the first switching device; and
a second control terminal controlling the second switching device;
wherein the resin selectively covers the first control terminal and the second control terminal such as to partially expose the first control terminal and the second control terminal.

2. The semiconductor power module according to claim 1 ,
wherein a direction of a current flowing through the first power supply terminal and a direction of a current flowing through the second power supply terminal are made opposite across the insulating substrate.

3. The semiconductor power module according to claim 1 ,
wherein the first power supply terminal is a high voltage side terminal, and
the second power supply terminal is a low voltage side terminal to which a voltage lower than a voltage applied to the first power supply terminal is to be applied.

4. The semiconductor power module according to claim 1 , further comprising:
a removed region formed in the insulating substrate such as to dissipate heat generated from the switching device from the one surface side to the other surface side.

5. The semiconductor power module according to claim 1 , further comprising:
a supporting substrate that is arranged at the one surface side of the insulating substrate, that has a facing surface facing the one surface of the insulating substrate and an opposite surface opposite to the facing surface, and that supports the switching device with the facing surface.

6. The semiconductor power module according to claim 5 , further comprising:
a heat dissipation member arranged at the opposite surface side.

7. The semiconductor power module according to claim 1 ,
wherein the insulating substrate is made of an inorganic insulating substrate or an organic insulating substrate.

8. The semiconductor power module according to claim 1 ,
wherein the thickness of the output terminal is not less than a total value of the thickness of the first power supply terminal and the thickness of the second power supply terminal.

9. The semiconductor power module according to claim 1 ,
wherein a plurality of the first switching devices are arranged at the one surface side of the insulating substrate such as to be connected each other in parallel, and
a plurality of the second switching devices are arranged at the one surface side of the insulating substrate such as to be connected each other in parallel.

10. The semiconductor power module according to claim 1 ,
wherein the first power supply terminal and the second power supply terminal are arranged at a distance from a peripheral edge of the insulating substrate, respectively.

11. The semiconductor power module according to claim 10 ,
wherein a distance between the first power supply terminal and the peripheral edge of the insulating substrate and a distance between the second power supply terminal and the peripheral edge of the insulating substrate are set to 2 mm or more, respectively.

12. The semiconductor power module according to claim 1 ,
wherein the output terminal is arranged at a position facing the first power supply terminal and the second power supply terminal across the resin as viewed in plan.

13. The semiconductor power module according to claim 1 ,
wherein the first control terminal and the second control terminal are each exposed from the resin in directions different from directions in which the first control terminal, the second control terminal and the output terminal are exposed from the resin.

14. The semiconductor power module according to claim 1 ,
wherein the first switching device includes a pair of first main electrodes and a first control electrode by which a current flowing between the pair of first main electrodes is to be controlled,
the second switching device includes a pair of second main electrodes and a second control electrode by which a current flowing between the pair of second main electrodes is to be controlled,
the first control terminal is electrically connected to the first control electrode of the first switching device, and
the second control terminal is electrically connected to the second control electrode of the second switching device.

15. The semiconductor power module according to claim 1 ,
wherein the switching device includes a MISFET, an IGBT or a BJT.

16. The semiconductor power module according to claim 15 ,
wherein the switching device includes an Si substrate or a wide bandgap semiconductor substrate, and
the MISFET, the IGBT or the BJT is formed in the Si substrate or the wide bandgap semiconductor substrate.

17. The semiconductor power module according to claim 1 ,
wherein the semiconductor power module is configured so that the terminal voltage is 500V or more.

Assignees

• Rohm Co Ltd

Inventors

• Hayashi Kenji
• Hayashiguchi Masashi

Classifications

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title