Substrate processing method

Patent metadata

Field	Value
Publication number	US-11901173-B2
Application number	US-202117527215-A
Country	US
Kind code	B2
Filing date	Nov 16, 2021
Priority date	May 31, 2018
Publication date	Feb 13, 2024
Grant date	Feb 13, 2024

Abstract

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

First claim

What is claimed is:

1. A substrate processing method comprising:
a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate, the patterned surface having projections and recesses;
a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form a processing film which holds a removal object present on the patterned surface, the processing film forming step including a step of forming the processing film such that, in an interior of a recessed portion defined between an adjacent pair of the projections of the patterned surface, the front surface of the processing film is positioned closer to a bottom of the recessed portion than top ends of the adjacent pair of the projected portions defining the recessed portion;
a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film; and
a substrate rotating step of holding the substrate horizontally to rotate the substrate around a vertical axis passing through a central portion of the substrate,
wherein the substrate rotating step includes a first rotating step of rotating the substrate at a first speed until formation of the processing film from a start of supplying the processing liquid to the patterned surface, thereby causing the processing liquid to enter the recesses of the pattern surface, and a second rotating step of accelerating a rotation of the substrate to rotate the substrate at a second speed faster than the first speed after the first rotating step, thereby forming a semi-solid state film from the processing liquid on the substrate, and
the method further comprises a heating step of heating the semi-solid state film that is started after the semi-solid state film has been formed and that is performed until the processing film is formed, and
the semi-solid state film before start of the heating step has a front surface positioned closer to the bottom of the recessed portion than the top ends of the adjacent pair of the projected portions defining the recessed portion in the interior of the recessed portion defined between the adjacent pair of the projections of the patterned surface.

2. The substrate processing method according to claim 1 , wherein, in the first rotating step, the processing liquid enters into the recesses of the pattern surface due to its own weight, and
the processing liquid, which is thinned, is formed by eliminating the processing liquid from the patterned surface in the second rotating step in a state where the processing liquid has entered into the recesses of the pattern surface due to its own weight.

3. The substrate processing method according to claim 1 , wherein the processing film forming step includes a step of forming the processing film such that a film thickness of the processing film becomes thinner than a height of the projections and the recesses of the patterned surface in a thickness direction of the substrate.

4. The substrate processing method according to claim 1 , wherein the processing film forming step includes a step of forming the processing film such that the processing film covers the removal object.

5. The substrate processing method according to claim 1 , wherein the processing film forming step includes a step of forming the processing film such that an adhesion of the processing film to the removal object becomes greater than an adhesion of the removal object to the patterned surface.

6. The substrate processing method according to claim 1 , wherein the removing step includes a penetrating hole forming step of partially dissolving the processing film by the peeling liquid to form a penetrating hole on the processing film.

7. The substrate processing method according to claim 6 , wherein the removing step includes a peeling liquid entry step of entering the peeling liquid between the processing film and the patterned surface via the penetrating hole.

8. The substrate processing method according to claim 1 , wherein the heating step includes a heating medium supplying step of supplying a heating medium to a lower surface of the substrate while rotating the substrate, and
a rotating speed of the substrate in the heating medium supplying step is equal to or lower than the rotation speed of the substrate in the second rotation step.

9. The substrate processing method according to claim 1 , wherein the processing liquid has a solute having a first component and a second component lower in solubility in the peeling liquid than the first component and a solvent which dissolves the solute, and
the processing film forming step includes a step of forming the processing film which has a first solid formed by the first component and a second solid formed by the second component.

10. The substrate processing method according to claim 9 , wherein the second component contains at least any one of novolac, polyhydroxystyrene, polystyrene, a polyacrylic acid derivative, a polymaleic acid derivative, polycarbonate, a polyvinyl alcohol derivative, a polmethacrylic acid derivative and a copolymer of a combination thereof.

11. The substrate processing method according to claim 9 , wherein the first component is a crack promoting component, and
the crack promoting component contains hydrocarbon, and a hydroxy group and/or a carbonyl group.

12. The substrate processing method according to claim 9 , wherein
the first component is expressed by at least any one of (B-1), (B-2) and (B-3) given below;
(B-1) is a compound which contains 1 to 6 of constituent units expressed by Chemical Formula 1 and in which each of the constituent units is bonded by a linking group L 1 ,

here, L 1 is selected at least from a single bond and any one of C 1-6 alkylene, Cy 1 is a hydrocarbon ring of C 5˜30 , R 1 is each independently C 1˜5 alkyl, n b1 is 1, 2 or 3, and n b1′ is 0, 1, 2, 3 or 4;
(B-2) is a compound expressed by Chemical Formula 2,

here, R 21 , R 22 , R 23 and R 24 are each independently hydrogen or C 1˜5 alkyl, L 21 and L 22 are each independently C 1˜20 alkylene, C 1˜20 cycloalkylene, C 2˜4 alkenylene, C 2˜4 alkynylene or C 6˜20 arylene, these groups may be substituted by C 1˜5 alkyl or hydroxyl, and n b2 is 0, 1 or 2;
(B-3) is a polymer which contains a constituent unit expressed by Chemical Formula 3 and has a weight average molecular weight (Mw) of 500 to 10,000,

R 25 is —H —CH 3 or —COOH.

13. The substrate processing method according to claim 9 , wherein the solubility of the second component in 5.0 mass % ammonia water is less than 100 ppm and the solubility of the first component in 5.0 mass % ammonia water is 100 ppm or more.

14. The substrate processing method according to claim 9 , wherein a mass of the second component is 0.1 to 50 mass %, as compared with an entire mass of the processing liquid.

15. The substrate processing method according to claim 9 , wherein
a weight average molecular weight (Mw) of the second component is 150 to 500,000.

Assignees

• Screen Holdings Co Ltd

Inventors

• Yoshida Yukifumi
• Okutani Manabu
• Yasuda Shuichi
• Kanematsu Yasunori
• Ueda Dai
• Zhang Song
• Nagahara Tatsuro
• KINUTA Takafumi

Classifications

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title