Substrate cleaning method, substrate cleaning system, and memory medium

Patent metadata

Field	Value
Publication number	US-9953826-B2
Application number	US-201414539174-A
Country	US
Kind code	B2
Filing date	Nov 12, 2014
Priority date	Nov 13, 2013
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

First claim

What is claimed is:

1. A method for cleaning a substrate, comprising:
supplying to a substrate a film-forming processing liquid which includes resin and a volatile component;
vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film that captures and contains particles adhered to a surface of the substrate on the substrate;
supplying to the substrate having the processing film a strip-processing liquid which strips the processing film containing the particles from the substrate such that the strip-processing liquid infiltrates between the processing film and the substrate without dissolving the processing film into a liquid state; and
supplying to the processing film a dissolving-processing liquid which dissolves the processing film stripped by the strip-processing liquid after the supplying of the strip-processing liquid such that the dissolving-processing liquid dissolves the processing film stripped by the strip-processing liquid,
wherein the substrate is one of a silicon wafer and a compound semiconductor wafer, wherein the substrate has a pattern formed on a surface thereof, wherein the dissolving-processing liquid is a liquid that dissolves the processing film and that is selected from the group consisting of an alkali developing solution having a first alkali concentration that dissolves the processing film into the liquid state and an isopropyl alcohol (IPA) and water solution having a first IPA concentration that dissolves the processing film into the liquid state, and wherein the strip-processing liquid is a liquid that does not dissolve the processing film into the liquid state before the supplying of the dissolving-processing liquid and that is selected from the group consisting of pure water, an alkali developing solution having a second alkali concentration that is lower than the first alkali concentration an IPA and water solution having a second IPA concentration that is lower than the first IPA concentration, and water mixed with CO 2 gas.

2. The method for cleaning a substrate according to claim 1 , wherein the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the substrate without a resist layer on the substrate.

3. The method for cleaning a substrate according to claim 1 , wherein the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the surface having the pattern.

4. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is pure water.

5. The method for cleaning a substrate according to claim 4 , wherein the pure water is heated pure water.

6. The method for cleaning a substrate according to claim 1 , wherein the substrate has a silicon nitride film forming a surface of the substrate.

7. The method for cleaning a substrate according to claim 1 , wherein the strip-processing liquid is a low concentration dissolving-processing liquid which is a lower concentration liquid of the dissolving-processing liquid such that the low concentration dissolving-processing liquid infiltrates between the processing film and the substrate without dissolving the processing film into the liquid state.

8. The method for cleaning a substrate according to claim 7 , wherein the supplying of the strip-processing liquid includes supplying the alkali developing solution having the second alkali concentration, and the supplying of the dissolving-processing liquid includes supplying the alkali developing solution having the first alkali concentration.

9. The method for cleaning a substrate according to claim 1 , wherein the supplying of the dissolving-processing liquid includes changing a concentration of the dissolving-processing liquid from one concentration to a higher concentration.

10. The method for cleaning a substrate according to claim 7 , wherein the dissolving-processing liquid comprises the IPA and water solution having the first IPA concentration, and the strip-processing liquid comprises the IPA and water solution having the second IPA concentration.

11. The method for cleaning a substrate according to claim 1 , wherein the dissolving-processing liquid comprises the alkali developing solution having the first concentration, wherein the first concentration is a concentration of 1.0% or higher, and the strip-processing liquid comprises the dissolving-processing liquid having an alkali concentration of 0.5% or lower.

12. The method for cleaning a substrate according to claim 1 , wherein the dissolving-processing liquid is the alkali developing solution of the first alkali concentration and comprises at least one of a quarternary ammonium hydroxide and choline, and the strip-processing liquid is the alkali developing solution of the second alkali concentration and comprises at least one of a quarternary ammonium hydroxide and choline.

13. The method for cleaning a substrate according to claim 1 , further comprising:
rinsing off the particles and the dissolving-processing liquid from the surface of the substrate.

14. The method for cleaning a substrate according to claim 1 , wherein the pure water is heated pure water having a temperature of 75° C. or lower.

15. The method for cleaning a substrate according to claim 1 , wherein the film-forming processing liquid is a topcoat solution.

16. The method for cleaning a substrate according to claim 1 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.

17. The method for cleaning a substrate according to claim 4 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.

18. The method for cleaning a substrate according to claim 8 , wherein the film-forming processing liquid is a topcoat solution, and the resin in the topcoat solution comprises acrylic resin.

Assignees

• Tokyo Electron Ltd

Inventors

• Kaneko Miyako
• Tanouchi Keiji
• Orii Takehiko
• Kanno Itaru
• Aibara Meitoku
• Tanaka Satoru

Classifications

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P70/15 Primary

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H01L21/0206 Primary

  Electricity · mapped topic